Novel Phase-Change, Resistive, Ferroelectric Materials and Their Applications

A special issue of Inorganics (ISSN 2304-6740). This special issue belongs to the section "Inorganic Materials".

Deadline for manuscript submissions: 30 June 2024 | Viewed by 1724

Special Issue Editor

School of Information Science and Engineering, Ningbo University, Ningbo, China
Interests: phase-change materials; ferroelectric materials; resistive memory; phase-change photonics

Special Issue Information

Dear Colleagues,

We are pleased to invite you to contribute original research articles as well as review articles to this Special Issue. Due to the increasingly significant asymmetrical development of data processing speeds between CPUs and memories, the "memory wall" problem severely restricts the overall speed improvement in computer systems. The integration of computation and storage, known as computation-in-memory (CIM), can reduce a computing system's dependence on data bandwidth, and thus, further unleash its computing power. In terms of power consumption, the proportion of memory has become increasingly significant. For example, in some high-performance servers and data center systems, memory power consumption is even becoming the main part of the system. In addition, the characteristics of memory application areas are also changing, from being primarily focused on computing to being primarily focused on storage and to the data exchange represented by "streaming media". This diversified trend in application areas also presents a challenge regarding the design of traditional memory products that aim to cover all application areas.

The development of memory technology that is faster, lower in power, higher in bandwidth, and lower in cost is urgently needed. Therefore, the development of next-generation high-density, high-speed, and low-power new memory technologies such as phase-change memory (PCRAM), resistive memory (RRAM), ferroelectric memory (FeRAM), and the corresponding embedded storage technologies has reached a highly recognized consensus in academia and industry. At the material level, this direction represents a way to redistribute computing to improve computing energy efficiency.

This Special Issue aims to offer a collection of articles describing state-of-the-art advances in the fields of novel information functional materials such as phase-change materials, resistive materials, and ferroelectric materials and their applications. This Special Issue will highlight the fundamental understanding of material properties, structures, and engineering methods to overcome the current challenges for next-generation memories. This Special Issue will also provide the latest progress and insights into forthcoming developments of these novel information functional materials and devices.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

  • Phase-change, resistive, and ferroelectric materials;
  • Nanomaterial preparation;
  • Heterostructure and interface engineering;
  • Correlation between structure and properties;
  • Applications of nanomaterials and interfaces in different fields.

We look forward to receiving your contributions. 

Dr. Yegang Lu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Inorganics is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2700 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • phase-change materials
  • resistive materials
  • ferroelectric materials
  • inorganic materials
  • ferroelectric field-effect transistor
  • photoelectric properties
  • nanostructure
  • heterostructure
  • in-memory computing

Published Papers (1 paper)

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11 pages, 2836 KiB  
Fabrication of a Laminated Actuator with Excellent Linearity Using Ground Potassium Sodium Niobate-Based Ceramic Sheets
by Youming Zhang, Qiang Hang, Dongxi Zheng, Fei Lin and Caifeng Chen
Inorganics 2024, 12(1), 18; - 31 Dec 2023
Viewed by 1325
Linearity is an important factor that affects actuator accuracy. However, the high nonlinearity of KNN piezoelectric ceramics restricts their application in actuators. In this study, we used grinding stress to improve the linearity of ceramic chips, and used them to fabricate a laminated [...] Read more.
Linearity is an important factor that affects actuator accuracy. However, the high nonlinearity of KNN piezoelectric ceramics restricts their application in actuators. In this study, we used grinding stress to improve the linearity of ceramic chips, and used them to fabricate a laminated actuator. The ceramic sheets were ground to a thickness of 0.5 mm. During grinding, some areas of the ceramic changed from tetragonal to orthorhombic, owing to the grinding stress. The piezoelectric constant (d33) increased from 198 to 268 pC/N. Notably, the linearity of the ceramics improved. Seven pieces of ground ceramics were bound, to fabricate a laminated multilayer actuator with a total thickness of 3.5 mm. A DC voltage was applied to the actuator, and the displacement was measured. The displacement reached 0.73 μm under a low driving voltage of 200 V. A linear regression analysis of the displacement–voltage relationship was performed, obtaining the regression equation of the actuator. The linearity correlation coefficient was approximately 0.9903, implying that the actuator exhibits a high accuracy. The grinding stress improved the linearity, together with the piezoelectric properties of the ceramic chips, thus improving the actuator accuracy. This research will promote the application of KNN piezoelectric ceramics in actuators. Full article
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