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Electronics
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RRAM Devices: Materials, Designs, and Properties
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RRAM Devices: Materials, Designs, and Properties

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (10 September 2021) | Viewed by 26857

Special Issue Editor

Prof. Dr. Jinho Bae

E-Mail Website
Guest Editor
Department of Ocean System Engineering, Jeju National University, Jeju 690-756, Republic of Korea
Interests: functional electronic polymeric materials; printed electronics; layer peeling problem; optical signal processing

Special Issue Information

Dear Colleagues,

The incremental advancement of complementary metal–oxide–semiconductor (CMOS) technologies is quickly approaching its physical and economical limitations. As such, many researchers have been looking for alternative ways of addressing the problems in develop future generation memory devices that offer higher integration density and lower power consumption than the commercialized memory based on the current technologies. In 2008, a new type of resistive random-access memory (RRAM) device was identified as a promising nonvolatile memory (NVM) as the fourth fundamental passive circuit element postulated in 1971, which can store two distinctive resistance states, high resistance state (HRS) or low resistance state (LRS). Ever since, a variety of resistive switching devices have been demonstrated with the hope of finding the next generation NVMs, offering the advantage of being highly scalable: 4F2 in a single layer which could be further reduced to 4F2/n where F is a half of pitch in a crossbar arrangement and n is the number of stacks of physical layers of resistive switching devices. However, these devices incur several severe issues for commercialization that result in frequent read/write errors and unnecessary power consumption. To fix the issues that affect the performance of RRAM devices, researchers are proposing various approaches regarding new materials, designs, and properties. Hence, this Special Issue will be considering all RRAM device-related outcomes to help researchers and will publish both original research papers and review papers to contribute to this research topic.

Prof. Dr. Jinho Bae
Guest Editor

Manuscript Submission Information

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Keywords

  • Resistive random-access memory
  • Resistive switching
  • Nonvolatile memory
  • High resistance state
  • Low resistance state
  • Power consumption
  • High integration density
  • Crossbar array

Published Papers (7 papers)

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Research

9 pages, 3840 KiB  
Article
Short-Term to Long-Term Plasticity Transition Behavior of Memristive Devices with Low Power Consumption via Facilitating Ionic Drift of Implanted Lithium
by Young Pyo Jeon, Yongbin Bang, Hak Ji Lee, Eun Jung Lee, Young Joon Yoo and Sang Yoon Park
Electronics 2021, 10(21), 2564; https://doi.org/10.3390/electronics10212564 - 20 Oct 2021
Viewed by 1677
Abstract
Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also display fascinating neuromorphic behaviors. We [...] Read more.
Recent innovations in information technology have encouraged extensive research into the development of future generation memory and computing technologies. Memristive devices based on resistance switching are not only attractive because of their multi-level information storage, but they also display fascinating neuromorphic behaviors. We investigated the basic human brain’s learning and memory algorithm for “memorizing” as a feature for memristive devices based on Li-implanted structures with low power consumption. A topographical and surface chemical functionality analysis of an Li:ITO substrate was conducted to observe its characterization. In addition, a switching mechanism of a memristive device was theoretically studied and associated with ion migrations into a polymeric insulating layer. Biological short-term and long-term memory properties were imitated with the memristive device using low power consumption. Full article
(This article belongs to the Special Issue RRAM Devices: Materials, Designs, and Properties)
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10 pages, 973 KiB  
Article
Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlOx-Based Resistive Switching Memory Devices with Magneto-Resistive Responses
by Jhen-Yong Hong, Chun-Yen Chen, Dah-Chin Ling, Isidoro Martínez, César González-Ruano and Farkhad G. Aliev
Electronics 2021, 10(20), 2525; https://doi.org/10.3390/electronics10202525 - 16 Oct 2021
Viewed by 2474
Abstract
Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/fγ noise power spectral density is observed in a wide range of [...] Read more.
Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlOx-based non-volatile resistive memory devices exhibiting both resistive switching (RS) and magneto-resistive (MR) effects. A 1/fγ noise power spectral density is observed in a wide range of applied voltage biases. By analyzing the experimental data within the framework of Hooge’s empirical relation, we found that the Hooge’s parameter α and the exponent γ exhibit a distinct variation upon the resistance transition from the low resistance state (LRS) to the high resistance state (HRS), providing strong evidence that the electron trapping/de-trapping process, along with the electric field-driven oxygen vacancy migration in the AlOx barrier, plays an essential role in the charge transport dynamics of AlOx-based RS memory devices. Full article
(This article belongs to the Special Issue RRAM Devices: Materials, Designs, and Properties)
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9 pages, 3541 KiB  
Article
A TaOx-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering
by Yabo Qin, Zongwei Wang, Yaotian Ling, Yimao Cai and Ru Huang
Electronics 2021, 10(20), 2451; https://doi.org/10.3390/electronics10202451 - 09 Oct 2021
Cited by 8 | Viewed by 3011
Abstract
Resistive random-access memory (RRAM) with the ability to store and process information has been considered to be one of the most promising emerging devices to emulate synaptic behavior and accelerate the computation of intelligent algorithms. However, variation and limited resistance levels impede RRAM [...] Read more.
Resistive random-access memory (RRAM) with the ability to store and process information has been considered to be one of the most promising emerging devices to emulate synaptic behavior and accelerate the computation of intelligent algorithms. However, variation and limited resistance levels impede RRAM as a synapse for weight storage in neural network mapping. In this work, we investigate a TaOx-based RRAM with Al ion local doping. Compared with a device without doping, the device with locally doped Al ion exhibits excellent uniformity and analog characteristics. The operating voltage and resistance states show tighter distributions. Over 150 adjustable resistance states can be achieved through tuning compliance current (CC) and reset stop voltage. Moreover, incremental resistance switching is available under optimized identical pulses. The improved uniformity and analog characteristics can be attributed to the collective effects of reduced oxygen vacancy (Vo) formation energy and weak conductive filaments induced by the local Al ion dopants. Full article
(This article belongs to the Special Issue RRAM Devices: Materials, Designs, and Properties)
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10 pages, 2510 KiB  
Article
Multi-Level Switching of Al-Doped HfO2 RRAM with a Single Voltage Amplitude Set Pulse
by Jinfu Lin, Shulong Wang and Hongxia Liu
Electronics 2021, 10(6), 731; https://doi.org/10.3390/electronics10060731 - 19 Mar 2021
Cited by 26 | Viewed by 4862
Abstract
In this paper, the resistive switching characteristics in a Ti/HfO2: Al/Pt sandwiched structure are investigated for gradual conductance tuning inherent functions. The variation in conductance of the device under different amplitudes and voltage pulse widths is studied. At the same time, [...] Read more.
In this paper, the resistive switching characteristics in a Ti/HfO2: Al/Pt sandwiched structure are investigated for gradual conductance tuning inherent functions. The variation in conductance of the device under different amplitudes and voltage pulse widths is studied. At the same time, it was found that the variation in switching parameters in resistive random-access memory (RRAM) under impulse response is impacted by the initial conductance states. The device was brought to a preset resistance value range by energizing a single voltage amplitude pulse with a different number of periodicities. This is an efficient and simple programming algorithm to simulate the strength change observed in biological synapses. It exhibited an on/off of about 100, an endurance of over 500 cycles, and a lifetime (at 85 °C) of around 105 s. This multi-level switching two-terminal device can be used for neuromorphic applications to simulate the gradual potentiation (increasing conductance) and inhibition (decreasing conductance) in an artificial synapse. Full article
(This article belongs to the Special Issue RRAM Devices: Materials, Designs, and Properties)
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20 pages, 3923 KiB  
Article
Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM) Based Ternary Combinational Logic Circuits
by Furqan Zahoor, Fawnizu Azmadi Hussin, Farooq Ahmad Khanday, Mohamad Radzi Ahmad, Illani Mohd Nawi, Chia Yee Ooi and Fakhrul Zaman Rokhani
Electronics 2021, 10(1), 79; https://doi.org/10.3390/electronics10010079 - 04 Jan 2021
Cited by 45 | Viewed by 7721
Abstract
The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital systems. Carbon nanotube field effect transistors (CNTFETs) [...] Read more.
The capability of multiple valued logic (MVL) circuits to achieve higher storage density when compared to that of existing binary circuits is highly impressive. Recently, MVL circuits have attracted significant attention for the design of digital systems. Carbon nanotube field effect transistors (CNTFETs) have shown great promise for design of MVL based circuits, due to the fact that the scalable threshold voltage of CNTFETs can be utilized easily for the multiple voltage designs. In addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing to its multilevel cell capability that enables the storage of multiple resistance states within a single cell. In this manuscript, a design approach for ternary combinational logic circuits while using CNTFETs and RRAM is presented. The designs of ternary half adder, ternary half subtractor, ternary full adder, and ternary full subtractor are evaluated while using Synopsis HSPICE simulation software with standard 32 nm CNTFET technology under different operating conditions, including different supply voltages, output load variation, and different operating temperatures. Finally, the proposed designs are compared with the state-of-the-art ternary designs. Based on the obtained simulation results, the proposed designs show a significant reduction in the transistor count, decreased cell area, and lower power consumption. In addition, due to the participation of RRAM, the proposed designs have advantages in terms of non-volatility. Full article
(This article belongs to the Special Issue RRAM Devices: Materials, Designs, and Properties)
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17 pages, 5333 KiB  
Article
Resistive Switching in Non-Stoichiometric Germanosilicate Glass Films Containing Ge Nanoclusters
by Vladimir A. Volodin, Pavel Geydt, Gennadiy N. Kamaev, Andrei A. Gismatulin, Grigory K. Krivyakin, Igor P. Prosvirin, Ivan A. Azarov, Zhang Fan and Michel Vergnat
Electronics 2020, 9(12), 2103; https://doi.org/10.3390/electronics9122103 - 10 Dec 2020
Cited by 15 | Viewed by 2186
Abstract
Metal–insulator–semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposited, while the second portion of MIS structures was [...] Read more.
Metal–insulator–semiconductor (MIS) structures based on thin GeO[SiO2] and GeO[SiO] films on Si substrates were fabricated with indium-tin-oxide as a top electrode. The samples were divided it two series: one was left as deposited, while the second portion of MIS structures was annealed at 500 °C in argon for 20 min. The structural properties of as-deposited and annealed non-stoichiometric germanosilicate (GeSixOy) films were studied using X-ray photoelectron spectroscopy, electron microscopy, Raman and infrared absorption spectroscopy, spectral ellipsometry, and transmittance and reflectance spectroscopy. It was found that the as-deposited GeO[SiO] film contained amorphous Ge clusters. Annealing led to the formation of amorphous Ge nanoclusters in the GeO[SiO2] film and an increase of amorphous Ge volume in the GeO[SiO] film. Switching from a high resistance state (HRS OFF) to a low resistance state (LRS ON) and vice versa was detected in the as-deposited and annealed MIS structures. The endurance studies showed that slight degradation of the memory window occurred, mainly caused by the decrease of the ON state current. Notably, intermediate resistance states were observed in almost all MIS structures, in addition to the HRS and LRS states. This property can be used for the simulation of neuromorphic devices and related applications in data science. Full article
(This article belongs to the Special Issue RRAM Devices: Materials, Designs, and Properties)
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10 pages, 2174 KiB  
Article
Electrical Properties and Biological Synaptic Simulation of Ag/MXene/SiO2/Pt RRAM Devices
by Xiaojuan Lian, Xinyi Shen, Jinke Fu, Zhixuan Gao, Xiang Wan, Xiaoyan Liu, Ertao Hu, Jianguang Xu and Yi Tong
Electronics 2020, 9(12), 2098; https://doi.org/10.3390/electronics9122098 - 09 Dec 2020
Cited by 26 | Viewed by 3650
Abstract
Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological [...] Read more.
Utilizing electronic devices to emulate biological synapses for the construction of artificial neural networks has provided a feasible research approach for the future development of artificial intelligence systems. Until now, different kinds of electronic devices have been proposed in the realization of biological synapse functions. However, the device stability and the power consumption are major challenges for future industrialization applications. Herein, an electronic synapse of MXene/SiO2 structure-based resistive random-access memory (RRAM) devices has been designed and fabricated by taking advantage of the desirable properties of SiO2 and 2D MXene material. The proposed RRAM devices, Ag/MXene/SiO2/Pt, exhibit the resistance switching characteristics where both the volatile and nonvolatile behaviors coexist in a single device. These intriguing features of the Ag/MXene/SiO2/Pt devices make them more applicable for emulating biological synaptic plasticity. Additionally, the conductive mechanisms of the Ag/MXene/SiO2/Pt RRAM devices have been discussed on the basis of our experimental results. Full article
(This article belongs to the Special Issue RRAM Devices: Materials, Designs, and Properties)
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