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Electronics
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Advances in Optoelectronic Devices: Materials, Designs and Applications
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Advances in Optoelectronic Devices: Materials, Designs and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Optoelectronics".

Deadline for manuscript submissions: closed (15 January 2024) | Viewed by 3380

Special Issue Editors

Dr. Soo Jin Kim

E-Mail Website
Guest Editor
School of Electrical Engineering, Korea University, Seoul 02841, Republic of Korea
Interests: nanophotonics; plasmonics; metasurface; photodetector; modulator; light-emitting device; silicon photonics; biosensors; neuromorphic photonics; optical imaging; thin-film technology; electromagnetism for IoT applications
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Sheng-Joue Young

E-Mail Website
Guest Editor
Department of Electronic Engineering, National United University, Miaoli City 36063, Taiwan
Interests: semiconductor physics; optoelectronic devices; nanotechnology
Prof. Dr. Liang-Wen Ji

E-Mail Website
Guest Editor
Department of Electro-Optical Engineering, National Formosa University, Yunlin 632, Taiwan
Interests: nano-optoelectronics; photo detector, nano-materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

With the progress of nano-fabrication, nano-optics, and the discovery of new materials, significant research is being conducted on the development of next-generation optoelectronic devices that can be applied in diverse fields, including energy, IoT sensors, biomedical devices, and novel silicon photonics.

This Special Issue focuses on the topic of emerging optical devices, such as photodetectors, solar cells, light-emitting devices, and silicon photonics, which include modulators, waveguides, and metasurface elements. In particular, we focus on the progress of the aforementioned devices promoted by cooperatively designing them with emerging new materials such as colloidal quantum dots and novel optical phenomena such as surface plasmonics and Mie-tronics.

The topics of interests include, but are not limited to, the following:

  • Solar cells, photodetectors, light-emitting devices;
  • Novel materials (perovskite, colloidal quantum dots, etc.) and their applications in optoelectronics;
  • Nanophotonics (plasmonics, metasurfaces) and their applications in optoelectronics;
  • Silicon photonics, waveguides, and modulators based on nano-optics;
  • Optical biosensors;
  • Optical neuromorphic devices, systems, and computing;
  • Thin-film technology: materials and applications.

Dr. Soo Jin Kim
Prof. Dr. Sheng-Joue Young
Prof. Dr. Liang-Wen Ji
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronics: solar cells, photodetectors, and LEDs
  • emerging materials: perovskite, CQDs
  • plasmonics and nanophotonics
  • metasurfaces
  • silicon photonics
  • biosensors

Published Papers (2 papers)

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Research

10 pages, 3166 KiB  
Article
Modeling and Simulation of Si Grating Photodetector Fabricated Using MACE Method for NIR Spectrum
by Akhmadi Surawijaya, Zefanya Chandra, Muhammad Amin Sulthoni, Irman Idris and Trio Adiono
Electronics 2023, 12(3), 663; https://doi.org/10.3390/electronics12030663 - 28 Jan 2023
Cited by 4 | Viewed by 1778
Abstract
In this research, we modeled a silicon-based photodetector for the NIR-IR spectrum using a grating structure fabricated using the metal-assisted chemical etching method. A nanostructure fabricated by using this method is free of defects such as unwanted sidewall metal depositions. The device is [...] Read more.
In this research, we modeled a silicon-based photodetector for the NIR-IR spectrum using a grating structure fabricated using the metal-assisted chemical etching method. A nanostructure fabricated by using this method is free of defects such as unwanted sidewall metal depositions. The device is simulated using Lumerical finite difference time domain (FDTD) for optical characteristics and Lumerical CHARGE for electrical characteristics. First, we optimized the grating structure duty cycle parameter for maximum optical power absorption using the particle swarm optimization algorithm provided in Lumerical FDTD, and then used the optimized parameter for our simulations. From Lumerical FDTD simulations, we found that the Cr masker metal used in the fabrication process acts as a resonant cavity and a potential candidate for internal photo emission (IPE) effects. By using Lumerical CHARGE, we performed electrical simulation and by adding the IPE calculation we found that at 850 nm wavelength the Si grating photodetector device exhibited 19 mA/W responsivity and detectivity of 2.62 × 106 Jones for −1 volt operating voltage. Full article
(This article belongs to the Special Issue Advances in Optoelectronic Devices: Materials, Designs and Applications)
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8 pages, 1655 KiB  
Article
A Mach–Zehnder Interferometer Refractive Index Sensor on a Spoof Surface Plasmon Polariton Waveguide
by Yawei Zhang, Yuzhu Liu, Haoyan Xi, Tianhua Meng and Guozhong Zhao
Electronics 2022, 11(23), 3944; https://doi.org/10.3390/electronics11233944 - 29 Nov 2022
Viewed by 1035
Abstract
In this paper, we experimentally and numerically confirm a planar Mach–Zehnder interferometer (MZI) device for sensing dielectric samples based on a spoof surface plasmon polariton (SSPP) waveguide. The MZI system is constructed using two different ultrathin transmission lines with distinct dispersion units supporting [...] Read more.
In this paper, we experimentally and numerically confirm a planar Mach–Zehnder interferometer (MZI) device for sensing dielectric samples based on a spoof surface plasmon polariton (SSPP) waveguide. The MZI system is constructed using two different ultrathin transmission lines with distinct dispersion units supporting SSPPs. After SSPPs propagate a certain propagation distance, a resonant dip is formed at a specific frequency due to destructive interference, whose displacement enables the SSPP to be modulated by one of the MZI arms loaded with dielectric samples. We investigate how the variations in the permittivity and thickness of dielectric samples affect the sensibility. Through an error analysis between the experimental measurements and numerical calculations, it is demonstrated that the plasmonic sensor based on the MZI has a high precision. The proposed technique is compact and robust and paves a versatile route toward the chip-scale functional devices in microwave circuits. Full article
(This article belongs to the Special Issue Advances in Optoelectronic Devices: Materials, Designs and Applications)
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