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Electronics
Special Issues
Two-Dimensional Materials for Nanoelectronics and Optoelectronics
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Two-Dimensional Materials for Nanoelectronics and Optoelectronics

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Optoelectronics".

Deadline for manuscript submissions: closed (31 December 2022) | Viewed by 6859

Special Issue Editors

Prof. Dr. Haibo Shu

E-Mail Website
Guest Editor
College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China
Interests: low-dimensional optoelectronic materials and devices; material design and simulation; spectroscopy of two-dimensional materials
Dr. Qingliang Feng

E-Mail Website
Guest Editor
School of Chemistry and Chemical Engineering, Northwestern Polytechnical Universtiy, Xi'an, China
Interests: synthesis and characterizations of two-dimensional materials; bandgap engineering; photodetection of two-dimensional materials
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Weitao Su

E-Mail Website
Guest Editor
School of Sciences, Hangzhou Dianzi University, Hangzhou 310018, China
Interests: tip-enhanced nanoscopy; low-dimensional materials

Special Issue Information

Dear Colleagues,

Two-dimensional (2D) materials, such as graphene, black phosphorus (BP), transition metal dichalcogenides (TMDs), MXenes, and Ruddlesden–Popper halide perovskites, have attracted increasing interest due to their scientific and technological importance, presenting unique structural, mechanical, electrical, and optical properties not only promoting the development of low-dimensional condensed matter physics and device physics, but also opening up many possibilities and new opportunities in the development of new-concept, highly integrated, and high-performance nanoelectronic and optoelectronic devices, such as field-effect transistors, solar cells, lasers, light-emitting diodes, photodetectors, etc. This Special Issue focuses on the fundamental physics and various nanoelectronic and optoelectronic applications of 2D materials and heterostructures, welcoming original research articles and reviews. Research areas may include (but are not limited to) the following:

  • Theoretical calculations and design of two-dimensional materials;
  • Novel electronic and optical properties of two-dimensional materials;
  • Synthesis and characterizations of two-dimensional materials and heterostructures;
  • Two-dimensional optoelectronic devices;
  • Two-dimensional nanoelectronic devices.

Prof. Dr. Haibo Shu
Dr. Qingliang Feng
Prof. Dr. Weitao Su
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (3 papers)

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Research

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9 pages, 2119 KiB  
Article
Preparation and Charge Transfer at Sb2Se3/1L-MoS2 Heterojunction
by Yiren Wang, Weitao Su, Fei Chen and Hong-Wei Lu
Electronics 2022, 11(16), 2574; https://doi.org/10.3390/electronics11162574 - 17 Aug 2022
Viewed by 1296
Abstract
Owing to the strong optical absorption of Sb2Se3, building heterojunctions (HJs) by using thin-layer Sb2Se3 and other two-dimensional (2D) materials is critical to the design and applications of ultrathin optoelectronic devices. However, the preparation of HJs using Sb2Se3 and other transition metal dichalcogenide [...] Read more.
Owing to the strong optical absorption of Sb2Se3, building heterojunctions (HJs) by using thin-layer Sb2Se3 and other two-dimensional (2D) materials is critical to the design and applications of ultrathin optoelectronic devices. However, the preparation of HJs using Sb2Se3 and other transition metal dichalcogenide (TMDC) thin layers is still challenging. Herein, a chemical vapor deposition (CVD) method was used to prepare monolayer MoS2(1L-MoS2) and Sb2Se3 thin layers. A dry transfer method was subsequently used to build their HJs. Individual PL spectra and PL mapping results obtained at the HJs indicate a charge injection from 1L-MoS2 into Sb2Se3 flake, which was further confirmed by contact potential difference (CPD) results obtained by using Kelvin probe force microscopy (KPFM). Further measurements indicate a type-Ⅰ band alignment with a band offset finally determined to be 157 meV. The obtained results of Sb2Se3/1L-MoS2 HJs will benefit the rational design of novel ultrathin optoelectronic devices based on novel 2D absorber layers working in visible light. Full article
(This article belongs to the Special Issue Two-Dimensional Materials for Nanoelectronics and Optoelectronics)
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10 pages, 2668 KiB  
Article
Fabrication of Large-Area Short-Wave Infrared Array Photodetectors under High Operating Temperature by High Quality PtS2 Continuous Films
by Yichen Zhang, Qingliang Feng, Rui Hao and Mingjin Zhang
Electronics 2022, 11(6), 838; https://doi.org/10.3390/electronics11060838 - 8 Mar 2022
Cited by 6 | Viewed by 1828
Abstract
A narrow bandgap of a few layers of platinic disulfide (PtS2) has shown great advantages in large-area array photodetectors for wide spectra photodetection, which is necessary for infrared imaging and infrared sensing under extreme conditions. The photodetection performance of two dimensional [...] Read more.
A narrow bandgap of a few layers of platinic disulfide (PtS2) has shown great advantages in large-area array photodetectors for wide spectra photodetection, which is necessary for infrared imaging and infrared sensing under extreme conditions. The photodetection performance of two dimensional materials is highly dependent on the crystalline quality of the film, especially under high operating temperatures. Herein, we developed large area uniform array photodetectors using a chemical vapor deposition grown on PtS2 films for short-wave infrared photodetection at high operating temperature. Due to the high uniformity and crystalline quality of as-grown large area PtS2 films, as-fabricated PtS2 field effect transistors have shown a broadband photo-response from 532 to 2200 nm with a wide working temperature from room temperature to 373 K. The photo-responsivity (R) and specific detectivity (D*) of room temperature and 373 K are about 3.20 A/W and 1.24 × 107 Jones, and 839 mA/W and 6.1 × 106 Jones, at 1550 nm, respectively. Our studies pave the way to create an effective strategy for fabricating large-area short-wave infrared (SWIR) array photodetectors with high operating temperatures using chemical vapor deposition (CVD) grown PtS2 films. Full article
(This article belongs to the Special Issue Two-Dimensional Materials for Nanoelectronics and Optoelectronics)
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Review

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18 pages, 2434 KiB  
Review
Recent Progress in Fabrication and Physical Properties of 2D TMDC-Based Multilayered Vertical Heterostructures
by Qiuran Lv, Fei Chen, Yuan Xia and Weitao Su
Electronics 2022, 11(15), 2401; https://doi.org/10.3390/electronics11152401 - 1 Aug 2022
Cited by 4 | Viewed by 2655
Abstract
Two-dimensional (2D) vertical heterojunctions (HSs), which are usually fabricated by vertically stacking two layers of transition metal dichalcogenide (TMDC), have been intensively researched during the past years. However, it is still an enormous challenge to achieve controllable preparation of the TMDC trilayer or [...] Read more.
Two-dimensional (2D) vertical heterojunctions (HSs), which are usually fabricated by vertically stacking two layers of transition metal dichalcogenide (TMDC), have been intensively researched during the past years. However, it is still an enormous challenge to achieve controllable preparation of the TMDC trilayer or multilayered van der Waals (vdWs) HSs, which have important effects on physical properties and device performance. In this review, we will introduce fundamental features and various fabrication methods of diverse TMDC-based multilayered vdWs HSs. This review focuses on four fabrication methods of TMDC-based multilayered vdWs HSs, such as exfoliation, chemical vapor deposition (CVD), metal-organic chemical vapor deposition (MOCVD), and pulsed laser deposition (PLD). The latest progress in vdWs HS-related novel physical phenomena are summarized, including interlayer excitons, long photocarrier lifetimes, upconversion photoluminescence, and improved photoelectrochemical catalysis. At last, current challenges and prospects in this research field are provided. Full article
(This article belongs to the Special Issue Two-Dimensional Materials for Nanoelectronics and Optoelectronics)
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