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Electronics
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Recent Advances in Millimeter-Wave Components and Integrated Technologies
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Recent Advances in Millimeter-Wave Components and Integrated Technologies

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microwave and Wireless Communications".

Deadline for manuscript submissions: 15 May 2024 | Viewed by 1216

Special Issue Editors

Dr. Weihua Yu

E-Mail Website
Guest Editor
School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
Interests: millimeter-wave integrated circuits and advanced packaging design; terahertz frequency integrated circuits and modules
Prof. Dr. Xiang Gao

E-Mail Website
Guest Editor
School of Cyberspace Science and Technology, Beijing Institute of Technology, Beijing 100081, China
Interests: MMW/THz devices and communication systems; MMW antenna arrays and beam forming

Special Issue Information

Dear Colleagues,

With the rapid development of fields such as 5G communication, millimeter-wave radar, satellite communication, smart cars, and intelligent Internet of Things, low-cost, high-performance, and miniaturized millimeter-wave devices and integrated systems are playing a crucial role in these fields. Therefore, exploring low-loss millimeter-wave transmission and interconnection technology, developing advanced millimeter-wave packaging and the integration process, researching miniaturized and reconfigurable millimeter-wave components and antenna, designing millimeter-wave chips with lower noise and higher power, achieving the high-density and multifunctional integration design of millimeter-wave integration systems, and expanding the application field of millimeter-wave integrated systems are currently the main research directions of millimeter-wave devices and integrated systems.

The aim of this Special Issue of Electronics is to present state-of-the-art investigations in millimeter-wave components, chips, and integrated technologies for current and future applications. We invite researchers to contribute original and unique articles, as well as sophisticated review articles. Topics of interest for this Special Issue include, but are not limited to, the following areas:

  • Reconfigurable millimeter-wave components;
  • Reconfigurable millimeter-wave antenna;
  • New millimeter-wave integrated passive device (IPD);
  • New millimeter-wave substrate integrated waveguide (SIW) components;
  • Advanced TSV/TGV packaging and integration technology;
  • Millimeter-wave packaged antenna (AiP) technology;
  • GaN, GaAs, and silicon-based millimeter-wave chips.

Dr. Weihua Yu
Prof. Dr. Xiang Gao
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • integrated passive device (IPD)
  • antenna arrays
  • millimeter-wave circuits and modules
  • advanced packaging
  • substrate integrated waveguide (SIW)
  • packaged antenna (AiP)
  • reconfigurable circuits
  • millimeter-wave radar frontend

Published Papers (2 papers)

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Research

15 pages, 13752 KiB  
Article
Wideband, Dual-Polarized Patch Antenna Array Fed by Novel, Differentially Fed Structure
by Naiming Ou, Xian Wu, Kaijiang Xu, Fukun Sun, Tongfei Yu and Yuchen Luan
Electronics 2024, 13(7), 1382; https://doi.org/10.3390/electronics13071382 - 05 Apr 2024
Viewed by 401
Abstract
In this article, a 1 × 4 wideband, dual-polarized patch antenna array fed by a novel, differentially fed structure is proposed. The differentially fed structure of the antenna was realized by a parallel line structure that was printed on a PCB and connected [...] Read more.
In this article, a 1 × 4 wideband, dual-polarized patch antenna array fed by a novel, differentially fed structure is proposed. The differentially fed structure of the antenna was realized by a parallel line structure that was printed on a PCB and connected with the inner and outer conductors of a coaxial cable. This method elaborately solved the problem of the narrow bandwidth of conventional microstrip differential feeding. By using a relatively thick air substrate (thickness = 0.19 λ0), stacked patches, a coupling feeding structure, and a differential feeding structure with the novel design, the element of the patch antenna array introduced below operated from 0.415 GHz to 0.707 GHz (achieving the 52.0% bandwidth) with a VSWR < 2.0, yielding a high port isolation less than −28 dB. For the array, an active VSWR less than 2.0 was also obtained with a port isolation of less than −25 dB, ranging from 0.405 GHz to 0.696 GHz. In the desired bandwidth, the array had an azimuth 3 dB beamwidth of about 19° for both horizontal polarization and vertical polarization. The antenna array also had good performance in scanning (stable gain and 3 dB beamwidth) and circular polarization (a 3 dB axial ratio bandwidth better than 54.5%). Full article
(This article belongs to the Special Issue Recent Advances in Millimeter-Wave Components and Integrated Technologies)
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17 pages, 12909 KiB  
Article
Making Path Selection Bright: A Routing Algorithm for On-Chip Benes Networks
by Li Zhao, Zhiwei Li and Tianming Ma
Electronics 2024, 13(5), 981; https://doi.org/10.3390/electronics13050981 - 04 Mar 2024
Viewed by 550
Abstract
Optical interconnects are being discussed as a replacement for conventional electrical interconnects and are expected to be applied for future generations of high-performance supercomputers and data centers. Benes networks have attracted much attention because they require only 2 × 2 optical switches, which [...] Read more.
Optical interconnects are being discussed as a replacement for conventional electrical interconnects and are expected to be applied for future generations of high-performance supercomputers and data centers. Benes networks have attracted much attention because they require only 2 × 2 optical switches, which reduce the cost of rearrangeable nonblocking. However, optical power imbalances can significantly challenge receiver sensitivity. In this work, insertion loss (IL) fairness has been proposed and applied to the field of switches to achieve a relative balance of optical path data transmission in Benes networks. Fairness can be achieved when the port count is small (4 × 4) if the IL between ports is balanced. When the number of ports is moderate (8 × 8), we must use a suitable algorithm or determine the appropriate operating wavelength to minimize the power imbalance. An efficient two-step algorithm (ETS) has particular advantages in solving the path fairness problem and mitigating the power imbalance. As the number of ports increases, the switch states and topology jointly deteriorate the power imbalance. Finally, the ETS algorithm narrows the dynamic range requirement to 13.66 dB, with a 2 dB improvement. It achieves an extinction ratio of 24 dB and a bandwidth of 375 GHz, which outperforms the conventional 32 × 32 Benes network, respectively. Full article
(This article belongs to the Special Issue Recent Advances in Millimeter-Wave Components and Integrated Technologies)
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