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Electronics
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New Insights into Memory/Storage Circuit, Architecture, and System
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New Insights into Memory/Storage Circuit, Architecture, and System

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: 15 August 2024 | Viewed by 428

Special Issue Editors

Dr. Liang Chang

E-Mail Website
Guest Editor
School of Information and Communication Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Interests: artificial intelligent chip algorithm-hardware co-design; an emerging nonvolatile memory circuit; memory-centric computing architecture
Dr. Guangyu Sun

E-Mail Website
Guest Editor
Center for Energy-Efficient Computing and Applications, Peking University, Beijing 100871, China
Interests: computer architecture and design automation
Prof. Dr. Yi Tong

E-Mail Website
Guest Editor
Suzhou Laboratory, Suzhou 215000, China
Interests: advanced semiconductor marerials and devices

Special Issue Information

Dear Colleagues,

Memory and storage are the core components of various computing systems, including artificial intelligence processors, general-purpose computing systems, and quantum computing systems. In both Von Neumann and non-Von Neumann computer architecture, the data movements and data flow are crucial to the performance of the computing system. In this Special Issue, we are seeking new insights, emerging technologies, and solutions with memory/storage innovations to improve the performance of computing systems. Particularly, we are looking for research on memory/storage optimization for embedded artificial intelligence processors, artificial intelligence processors with computing-in-memory architecture, artificial intelligent processors with emerging non-volatile memory, emerging memory technologies for novel applications, artificial intelligence processors for quantum computing, memory/storage innovations for large-scale models, EDA technologies for memory/storage optimization, novel material/devices for high-performance memory/storage, the endurance improvement method for non-volatile memory, 3-D technology for storage devices, etc. We welcome memory/storage-related researchers to contribute to this Special Issue.

Dr. Liang Chang
Dr. Guangyu Sun
Prof. Dr. Yi Tong
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • memory circuit
  • memory-centric computing
  • computing-in-memory architecture
  • emerging memory technology
  • non-volatile memory
  • memory system
  • memory management for AI

Published Papers (1 paper)

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Research

11 pages, 2371 KiB  
Article
Realization of Empathy Capability for the Evolution of Artificial Intelligence Using an MXene(Ti3C2)-Based Memristor
by Yu Wang, Yanzhong Zhang, Yanji Wang, Hao Zhang, Xinpeng Wang, Rongqing Xu and Yi Tong
Electronics 2024, 13(9), 1632; https://doi.org/10.3390/electronics13091632 - 24 Apr 2024
Viewed by 233
Abstract
Empathy is the emotional capacity to feel and understand the emotions experienced by other human beings from within their frame of reference. As a unique psychological faculty, empathy is an important source of motivation to behave altruistically and cooperatively. Although human-like emotion should [...] Read more.
Empathy is the emotional capacity to feel and understand the emotions experienced by other human beings from within their frame of reference. As a unique psychological faculty, empathy is an important source of motivation to behave altruistically and cooperatively. Although human-like emotion should be a critical component in the construction of artificial intelligence (AI), the discovery of emotional elements such as empathy is subject to complexity and uncertainty. In this work, we demonstrated an interesting electrical device (i.e., an MXene (Ti3C2) memristor) and successfully exploited the device to emulate a psychological model of “empathic blame”. To emulate this affective reaction, MXene was introduced into memristive devices because of its interesting structure and ionic capacity. Additionally, depending on several rehearsal repetitions, self-adaptive characteristic of the memristive weights corresponded to different levels of empathy. Moreover, an artificial neural system was designed to analogously realize a moral judgment with empathy. This work may indicate a breakthrough in making cool machines manifest real voltage-motivated feelings at the level of the hardware rather than the algorithm. Full article
(This article belongs to the Special Issue New Insights into Memory/Storage Circuit, Architecture, and System)
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