Low-Voltage Integrated Circuits Design and Application, Volume II

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: closed (28 February 2022) | Viewed by 2733

Special Issue Editor


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Guest Editor
Department of Information Engineering, University of Brescia, 25123 Brescia, Italy
Interests: electromagnetic interference analysis in integrated circuits; integrated voltage converters based on capacitors or inductors; design of ultra-low voltage analog circuits
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Special Issue Information

Dear Colleagues,

In recent years, the design of low-voltage and ultra-low power circuits has been of paramount importance. This is motivated by the power constraints and the advanced deep submicron technologies which require lower and lower supply voltages, less than 1V. Even lower supply voltage may be requested for low-power systems, especially those applied in biomedical implantable or wearable electronic devices, autonomous sensor nodes supplied with nonconventional energy sources, Internet of Things networks, and other similar applications.

One of the most challenging tasks for analogue and digital designers is to maintain the circuit performances by developing novel circuit structures capable of operating with a low supply voltage. Moreover, the increasing demands for both low supply voltage and energy efficiency often have a detrimental effect on the robustness and the reliability of integrated circuits, especially analogue ones.

Regarding the Volume I, please refer to the following link (https://www.mdpi.com/journal/electronics/special_issues/low_voltage_circuits). All of the 22 published papers can be accessed freely.

The topics to be covered in this Special Issue are as follows:

  • Theory, design, and new applications of low-voltage, low-power circuits;
  • Conventional and nonconventional low-voltage analog and digital design techniques;
  • Supply and energy harvesting blocks;
  • Implantable and wearable devices for biomedical monitoring applications;
  • Low-voltage circuits for Internet of Things (IoT) applications;
  • Low-voltage power-efficient analog-to-digital converters;
  • Design techniques to achieve high robustness and reliability against the electromagnetic pollution.

Prof. Dr. Anna Richelli
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (1 paper)

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Research

12 pages, 8493 KiB  
Article
Linearization Technique of Low Power Opamps in CMOS FD-SOI Technologies
by Wieslaw Kuzmicz
Electronics 2021, 10(15), 1800; https://doi.org/10.3390/electronics10151800 - 27 Jul 2021
Viewed by 1964
Abstract
Negative feedback applied to the back gate of MOS devices available in FD-SOI (fully depleted silicon on insulator) CMOS technologies can be used to improve the linearity of operational amplifiers. Two operational amplifiers designed and fabricated in a 22 nm FD-SOI technology illustrate [...] Read more.
Negative feedback applied to the back gate of MOS devices available in FD-SOI (fully depleted silicon on insulator) CMOS technologies can be used to improve the linearity of operational amplifiers. Two operational amplifiers designed and fabricated in a 22 nm FD-SOI technology illustrate this technique, as well as its advantages and limitations. Full article
(This article belongs to the Special Issue Low-Voltage Integrated Circuits Design and Application, Volume II)
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