Advanced Electronics and Optoelectronics Based on 2D Materials and vdW Heterostructures
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials".
Deadline for manuscript submissions: closed (15 August 2023) | Viewed by 1850
Special Issue Editor
Interests: 2D materials; field effect transistors; smart sensors; low frequency noise; ISFETs; memory devices; nanostructured materials
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Two-dimensional (2D) materials have created a new paradigm in atomic-scale devices. Numerous applications such as logic devices and advanced optoelectronics have been extensively explored in relation to 2D materials owing to their compelling properties, including atomically thin thicknesses, dangling bond-free surfaces, and appropriate band gaps, etc. Moreover, the weak vdW interaction between the layers means that 2D materials can be easily exfoliated, and offers great flexibility to stack a wide variety of 2D materials to construct artificial vdW heterostructures without the constraint of atomically precise commensurability. These 2D vdW heterostructures have emerged as promising way of further engineering the electronic and optoelectronic properties of 2D materials, showing great promise for a variety of novel functional devices, including advanced transistors, multilevel inverters, memory devices, photodetectors, photovoltaics, etc. Motivated by the rapid progresses in 2D materials, this Special Issue highlights the material preparation, property modulation, device design, and their device explorations towards advanced electronics and optoelectronics.
Dr. Wugang Liao
Guest Editor
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Keywords
- field-effect transistors
- 2D materials
- vdW heterostructures
- memory devices
- photodetectors
- photovoltaics
- sensors
