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Electronics
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Advances in Nanophotonic Sensors, Devices and Functional Applications
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Advances in Nanophotonic Sensors, Devices and Functional Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (28 February 2023) | Viewed by 1639

Special Issue Editors

Dr. Briliant A. Prabowo

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Guest Editor
INL-International Iberian Nanotechnology Laboratory, Avenida Mestre José Veiga, 4715-330 Braga, Portugal
Interests: biosensors; nanotechnology; optoelectronics; semiconductor; devices; sensors; plasmonics; surface plasmon resonance; plasmonic biosensing; plasmonic materials; plasmonic fabrication; microfluidics; integrated sensors; point-of-care devices
Special Issues, Collections and Topics in MDPI journals
Dr. Anirban Das

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Guest Editor
School of Engineering and Materials Science, Queen Mary University of London, London E1 4NS, UK
Interests: electrochemical imaging; solid-state sensors; chemical sensors; semiconductor thin films; photolithography; electrochemical detection; electroanalytical chemistry; electrochemical analysis; material characterization; semiconductor device physics; optoelectronics; GaN; nanomaterials; semiconductor physics; thin-film deposition; electrical characterization; nanofabrication; bioelectronics

Special Issue Information

Dear Colleagues,

Nanophotonic devices are increasingly being employed for sensing and related functional applications. The research topics mainly focus on the specific design, fabrication technique, and applications of nanophotonic materials, devices, and sensors for biomedicine, food safety, chemicals, environmental monitoring, as well as energy harvesting.  We would like to cordially invite you to submit your novel studies in the nanophotonic field to this Special Issue, entitled “Advances in Nanophotonic Sensors, Devices and Functional Applications.”

The Special Issue is devoted to, but not limited to, the following topics:

  • Nanophotonic material and design: theoretical simulation for nanophotonics material, design, and devices.
  • Nanophotonic materials, structure, and their fabrication: nanophotonic fabrications, fluorescence materials, metamaterials, organic photonic materials, nano-LED, OLED, low-dimensional materials for nanophotonic, nano-optic, nanoscale photolithography, 3D photolithography, electron beam lithography (EBL), nanostructures and nanoparticles for nanophotonic applications.
  • Nanophotonic sensors: LAPS, Optofluidic, plasmonic devices, surface-enhanced Raman spectroscopy (SERS), fiber optic sensor, and photonic crystal.
  • Nanophotonic devices: energy harvesting, photovoltaics, photodetectors, phototransistor, nano-gratings, waveguides, artificial photosynthesis materials and devices.
  • Nanophotonics integration: optical system, instrumentation optics, and circuit for functional applications in optics and photonics.
  • Nanophotonics applications: chemical sensors, gas sensors, biosensors, food quality and safety, environmental monitoring, colorimetry sensing, energy harvesting, and artificial photosynthesis.

Dr. Briliant A. Prabowo
Dr. Anirban Das
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanophotonic
  • sensor
  • device
  • optic
  • nanomaterial
  • nanostructure

Published Papers (1 paper)

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Research

14 pages, 3940 KiB  
Article
Theoretical Analysis of the Time Transient of the THz Self-Mixing Rectification Voltage in a Semiconductor Barrier
by Fabrizio Palma
Electronics 2023, 12(6), 1264; https://doi.org/10.3390/electronics12061264 - 07 Mar 2023
Cited by 1 | Viewed by 919
Abstract
THz detection in a silicon structure can be an effective instrument not only for image detection, and material and gas sensing, but also for communications. Next-generation 6G communications assume the possibility of achieving a large-band transmission, using free space propagation with THz carriers. [...] Read more.
THz detection in a silicon structure can be an effective instrument not only for image detection, and material and gas sensing, but also for communications. Next-generation 6G communications assume the possibility of achieving a large-band transmission, using free space propagation with THz carriers. This possibility relies on the availability of an effective, low-cost detector technology. THz detection by self-mixing can provide an effective amplitude demodulation of the incoming carrier, with antennas directly fabricated on the chip. In this case, the speed of the detectors represents a crucial point in the definition of the bandwidth whereby several GHz are indeed required by the communication systems. The self-mixing process is intrinsically very fast, since it depends on the non-linear interaction of the radiation with the majority carriers inside the semiconductor structure. In this paper, we evaluate analytically the time dependence of the onset of the rectified voltage. A potential propagation along the detector channel follows the self-mixing rectification, accompanied by the charging of the parasitic capacitances of the structure. A numerical simulator can easily evaluate the delay due to this propagation along the structure, but the transient of the true origin of the signal, i.e., the establishment of the self-mixing voltage, at the current time, can be only inferred by analytical approach. In this work, we use the model developed for the THz rectification in the depletion region of an MOS capacitance to develop a transient model of the formation of the characteristic self-mixing charge dipole, and of the generation of the rectified potential. Subsequently, we show by TCAD simulations the propagation of the effect on the semiconductor structure, which surrounds the rectifying barrier, and evaluate the overall time response of a detector. Full article
(This article belongs to the Special Issue Advances in Nanophotonic Sensors, Devices and Functional Applications)
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