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Electronics
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Advanced Topics in Modelling Microwave and mmWave Electron Devices
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Advanced Topics in Modelling Microwave and mmWave Electron Devices

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: 20 October 2024 | Viewed by 3784

Special Issue Editors

Prof. Dr. Simona Donati Guerrieri

E-Mail Website
Guest Editor
Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, 10129 Torino, Italy
Interests: computer-aided design; electron devices; microwave electronics; multiphysics modeling
Dr. Lida Kouhalvandi

E-Mail Website
Guest Editor
1. Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, 10129 Torino, Italy
2. Department of Electrical and Electronics Engineering, Dogus University, 34775 Istanbul, Turkey
Interests: RF high power amplifier (HPA) design; automated circuit design; optimization algorithms applied to HPA designs using machine learning; antenna designs; analog circuit and system designs (CMOS)
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

RF and Microwave electronics represents a key research field that can enable a wide variety of applications, including wireless telecommunications, radars and satellite surveillance systems, space commercialization and, more recently, sensing systems for quantum electronics. The continuous development of semiconductor technologies dedicated to microwave and mm wave applications, both in compound semiconductors (GaAs, GaN, InP) and silicon, poses ever-increasing challenges to the device modelling community. The availability of accurate device models and their efficient implementation in physical and circuit analysis is the key enabling factor allowing for the deployment of microwave integrated circuits with reduced cost, high reliability and fast time to market. Despite this, modeling electron devices in microwave systems is especially challenging. Device models must take into account multiple features in terms of nonlinearity, memory, reliability, noise and thermal management.

Multi-physics analysis, including electrical, thermal and electromagnetic analysis, has always represented a typical feature of microwave modelling, especially when including passive structures. New trends in the modelling community investigate time domain, frequency domain and mixed approaches to target specific modelling needs, e.g., to mimic the response to broadband amplitude modulated signals, the long-term memory effects due to trap dynamics in GaN HEMTs or the nonlinear stability analysis.  Sophisticated characterization techniques have also been specifically developed to assist the model identification process. A very promising field is also represented by artificial intelligence, which will prospectively revolutionize the design of microwave circuits in terms of timesaving and optimization capability.

The continuous scaling of device dimensions, as well as the massive exploitation of silicon-based devices, have caused the inclusion of advanced concepts for electronic transport and quantization to take a decisive step further. Microwave systems for quantum detection and sensing also foster nanotechnologies to become prime actors of future microwave systems and require specifically developed models in terms of noise, transport and quantum description, especially in the cryogenic regime. Furthermore, technological reliability becomes poorer in emerging devices and the impact of variability on analog performance is harsher than in digital applications.

This Special Issue is devoted to collecting selected papers, both original research papers and reviews, on the peculiar modelling approaches required for microwave and mm wave electron devices, joining the modelling community efforts towards setting the pathway to address the challenges of future technologies and applications.

Relevant topics include, but are not limited to:

  • Models for RF, microwave and mm-wave technologies: GaN HEMTs, metamorphic HEMTs, FinFETs, nanodevices;
  • Physics-based models; compact models; behavioral models;
  • ANN modeling of microwave components;
  • Multiphysics simulation: electromagnetic, thermal, traps, electronic transport, quantum confinement;
  • Time domain/frequency domain/envelope domain models;
  • Stability analysis;
  • Noise models;
  • Cryogenic models;
  • Sensitivity, statistical and reliability analysis.

Prof. Dr. Simona Donati Guerrieri
Dr. Lida Kouhalvandi
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nonlinear device models
  • ANN modelling
  • multiphysics modelling
  • HEMTs models
  • cryogenic models

Published Papers (3 papers)

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Research

14 pages, 3689 KiB  
Article
Design and Analysis of Complementary Metal–Oxide–Semiconductor Single-Pole Double-Throw Switches for 28 GHz 5G New Radio
by Yo-Sheng Lin, Chin-Yi Huang, Chung-Ta Huang, Jin-Fa Chang, Nai-Wen Tien and Yu-Hao Chuang
Electronics 2023, 12(19), 4156; https://doi.org/10.3390/electronics12194156 - 07 Oct 2023
Cited by 3 | Viewed by 791
Abstract
We propose a single-pole double-throw (SPDT) switch with low insertion loss (IL), high isolation, and high linearity for a 28 GHz 5G new radio. The transmit (TX) path is a π-network consisting of a parallel dynamic-threshold metal–oxide–semiconductor (DTMOS) transistor, M1, with [...] Read more.
We propose a single-pole double-throw (SPDT) switch with low insertion loss (IL), high isolation, and high linearity for a 28 GHz 5G new radio. The transmit (TX) path is a π-network consisting of a parallel dynamic-threshold metal–oxide–semiconductor (DTMOS) transistor, M1, with large body-floating resistance, RB (DTMOS-R M1), a series one-eighth-wavelength (λ/8) transmission line (TL), and a parallel capacitance, Cant. The series λ/8-TL in conjunction with the parallel Cant and transistors’ capacitance constitute an equivalent λ/4-TL with a characteristic impedance of 50 Ω. This leads to low IL in the TX mode and decent isolation in the receive (RX) mode. The RX path is an L-network constituting a series impedance (of parallel inductance L1 and DTMOS-R M2) and a parallel DTMOS-R M3. This leads to a decent IL in the RX mode and isolation in the TX mode. The first SPDT switch (SPDT SW1) is designed and implemented in a 90 nm complementary metal–oxide–semiconductor (CMOS) with a top metal thickness (TMT) of 3.4 μm. A comparative SPDT switch (SPDT SW2) in a 0.18 μm CMOS with a thinner TMT of 2.34 μm is also designed and implemented. In the TX mode, SPDT SW1 achieves a measured IL of 0.67 dB at 28 GHz and 0.58–1 dB for 17–34.9 GHz and a measured isolation of 44.3 dB at 28 GHz and 25.6–62.3 dB for 17–34.9 GHz, one of the best IL and isolation results ever reported for millimeter-wave CMOS SPDT switches. The measured input 1 dB compression point (P1dB) is 28.5 dBm at 28 GHz. Moreover, in the RX mode, SPDT SW1 attains a measured IL of 1.9 dB at 28 GHz and 1.83–2.1 dB for 25–38.3 GHz and an isolation of 25 dB at 28 GHz and 24.5–27 dB for 25–38.3 GHz. The measured P1dB is 24 dBm at 28 GHz. Full article
(This article belongs to the Special Issue Advanced Topics in Modelling Microwave and mmWave Electron Devices)
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15 pages, 40580 KiB  
Article
3D-Printed Dielectric Rods for Radar Range Enhancement
by Mohammad Omid Bagheri, Hajar Abedi and George Shaker
Electronics 2023, 12(19), 4016; https://doi.org/10.3390/electronics12194016 - 23 Sep 2023
Cited by 1 | Viewed by 1051
Abstract
A design strategy to alter the radiation characteristics of modular radar printed circuit boards without the need for expensive retooling and remanufacturing is presented in this paper. To this end, a compact radar module including microstrip array antennas integrated with a dielectric rod [...] Read more.
A design strategy to alter the radiation characteristics of modular radar printed circuit boards without the need for expensive retooling and remanufacturing is presented in this paper. To this end, a compact radar module including microstrip array antennas integrated with a dielectric rod lens is considered for a demonstration of an X-band radar antenna gain improvement leading to radar detection range enhancement. Using travelling wave theory, the proposed lens is designed to target the excitation of HE11 mode to achieve gain improvement without disturbing reflection coefficients. Using a low-cost rapid-manufacturing 3D-printing technology, two pairs of the 3D-printed dielectric rods integrated with a dielectric housing are designed and fabricated uniformly for a commercially available off-the-shelf radar module. The radar integration with the dielectric rod lens leads to a low-cost and easy-to-fabricate long-range radar system. Compared with the radar without the rods, the design system achieved a measured 6.6 dB gain improvement of the transmitter and receiver antennas which causes doubling the detection range for both elevation and azimuth directions at 10.525 GHz. Full article
(This article belongs to the Special Issue Advanced Topics in Modelling Microwave and mmWave Electron Devices)
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13 pages, 1334 KiB  
Article
TCAD Modeling of GaN HEMT Output Admittance Dispersion through Trap Rate Equation Green’s Functions
by Eva Catoggio, Simona Donati Guerrieri and Fabrizio Bonani
Electronics 2023, 12(11), 2457; https://doi.org/10.3390/electronics12112457 - 30 May 2023
Cited by 2 | Viewed by 1467
Abstract
We present a novel and numerically efficient approach to analyse the sensitivity of AC parameters to variations of traps in GaN HEMTs. The approach exploits an in-house TCAD simulator implementing the drift-diffusion model self-consistently coupled with trap rate equations, solved in dynamic conditions [...] Read more.
We present a novel and numerically efficient approach to analyse the sensitivity of AC parameters to variations of traps in GaN HEMTs. The approach exploits an in-house TCAD simulator implementing the drift-diffusion model self-consistently coupled with trap rate equations, solved in dynamic conditions with the Harmonic Balance algorithm. The capability of the model is demonstrated studying the low-frequency dispersion of a 150 nm gate-length AlGaN/GaN HEMT output admittance YDD as a function of the trap energy of Fe-induced buffer traps. The real part of YDD exhibits strong frequency dispersion and an important degradation of the output resistance at high frequency. The imaginary part is characterized by a peak at a frequency decreasing with trap energy deeper in the gap, in agreement with experimental data on similar structures. Distributed local sources show that YDD is most sensitive to trap energy variations localized in the buffer region under the gate, peaking under the unsaturated portion of channel towards the source. Trap variations affect the output admittance when localized in depth into the buffer up to a 100 nm distance from the channel. Full article
(This article belongs to the Special Issue Advanced Topics in Modelling Microwave and mmWave Electron Devices)
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