Embedded FET for Application as a Biosensor

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Electronic Materials".

Deadline for manuscript submissions: 16 August 2024 | Viewed by 3122

Special Issue Editors


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Guest Editor
School of Chemistry and Chemical Engineering, Queen's University Belfast, Belfast BT7 1NN, Northern Ireland, UK
Interests: biosensor; FET; electrochemical; SERS; green technology
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Guest Editor
Department of Analytical Chemistry, Faculty of Sciences, University of Granada, Granada, Spain
Interests: biotechnology; nanotechnology; microfluidic; healthcare biosensors; optical sensors; µPAD

Special Issue Information

Dear Colleagues,

Field-effect transistor (FET) biosensors are highly attractive among myriads of biosensing techniques and are widely applied in major applications, such as clinical diagnostics, environmental control, food safety, and energy harvesting and storage. The various technical evolution of the FET system and structures have contributed to their outstanding features, including their versatile, low-cost and scalable fabrication, and ultra-sensitive detection.

This Special Issue seeks to showcase research papers, short communications, and review articles that focus on advancing FET-based platforms, including its state-of-the-art and novel trends toward novel and innovative bioanalytical and molecular detection approaches. 

We welcome manuscripts that address all aspects of FET engineering and integration for biosensor applications, including but not limited to the following topics:

  • Low-dimensional materials for FET biosensors, e.g., nanowires and 2D-material-based FETs;
  • Thin-film transistor (TFT)-based FET biosensors;
  • Metal–organic framework (MOF)-based FET biosensors;
  • Organic FET biosensors, e.g., paper- and polymer-based FETs;
  • Nanoparticle-integrated FET biosensors;
  • FET-based lab-on-a-chip and micro total analysis system (uTAS);
  • Wearable and implantable FET sensors;
  • Interfacial/surface engineering of FET biosensors;
  • Light-addressable potentiometric sensor (LAPS);
  • High-electron-mobility transistor (HEMT) biosensors;
  • Artificial intelligence (AI) and machine learning (ML) in FET biosensors.

Dr. Agnes Purwidyantri
Dr. Inmaculada Ortiz-Gómez
Guest Editors

Manuscript Submission Information

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Keywords

  • FET
  • biosensor
  • LAPS
  • HEMT
  • wearable sensors
  • nanomaterials
  • biochemical sensors

Published Papers (1 paper)

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Research

14 pages, 5765 KiB  
Article
TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit
by Lubna Majeed, Syed Intekhab Amin, Zuber Rasool, Ishrat Bashir, Naveen Kumar and Sunny Anand
Electronics 2023, 12(3), 536; https://doi.org/10.3390/electronics12030536 - 20 Jan 2023
Cited by 3 | Viewed by 2445
Abstract
A dual-gate organic field effect transistor (DG-OFET)-based pH sensor is proposed that will be able to detect the variations in the aqueous (electrolyte) medium. In this structure, a source-sided underlap technique with a dual-gate sensing approach has been used. The change in ON-current [...] Read more.
A dual-gate organic field effect transistor (DG-OFET)-based pH sensor is proposed that will be able to detect the variations in the aqueous (electrolyte) medium. In this structure, a source-sided underlap technique with a dual-gate sensing approach has been used. The change in ON-current (ION) was observed due to parallel examination of electrolytes in two gates underlapping the region of the structure. For the evaluation of the sensitivity of DG-OFET, the change in the drain current was exploited for different pH and corresponding charge densities utilizing 2D physics-based numerical simulation. The simulation results were extracted with the help of the software package Silvaco TCAD-ATLAS. The simulated results display that the proposed DG-OFET shows significantly higher sensitivity for high-k dielectrics. The voltage sensitivity achieved by DG-OFET with SiO2 as a dielectric in our work is 217.53 mV/pH which surpasses the Nernst Limit nearly four times. However, using a high-k dielectric (Ta2O5) increases it further to 555.284 mV/pH which is more than nine times the Nernst Limit. The DG-OFET pH sensor has a lot of potential in the future for various flexible sensing applications due to its flexibility, being highly sensitive, biocompatible and low-cost. Full article
(This article belongs to the Special Issue Embedded FET for Application as a Biosensor)
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