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Crystals
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Defects in Crystals
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Defects in Crystals

A special issue of Crystals (ISSN 2073-4352).

Deadline for manuscript submissions: closed (30 April 2020) | Viewed by 17490

Special Issue Editor

Dr. Julita Smalc-Koziorowska

E-Mail Website
Guest Editor
Institute of High Pressure Physics PAS, Sokolowska 29/37, 01-142 Warsaw, Poland
Interests: semiconductors, transmission electron microscopy, extended defects, nitrides, wurtzite structure

Special Issue Information

Dear Colleagues,

Defects in crystals may affect the mechanical, chemical and electrical properties of materials and are therefore subject to intense theoretical and experimental studies. Dislocations in the optoelectronic heterostructures act as non-recombination centres and may lead to device degradation. Vacancies may agglomerate into voids and affect the mechanical properties of crystals. The extended and point defects may be introduced for various reasons, which include the relaxation of mismatch strains in epitaxial structures, mistakes during the growth process or during post-growth treatment. The elimination of the defects is only possible when we understand the mechanisms of their introduction. This Special Issue of Crystals is devoted to theoretical and experimental studies of defects and successful methods of eliminating them. Authors are encouraged to submit their manuscripts covering the topics expressed in the keywords below.

Dr. Julita Smalc-Koziorowska
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • extended defects
  • point defects
  • epitaxial growth
  • defect elimination
  • strain relaxation mechanism

Published Papers (6 papers)

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Editorial

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1 pages, 133 KiB  
Editorial
Defects in Crystals
by Julita Smalc-Koziorowska
Crystals 2020, 10(10), 915; https://doi.org/10.3390/cryst10100915 - 09 Oct 2020
Cited by 2 | Viewed by 1663
Abstract
Defects affect various properties of all kinds of crystals regardless of their sizes and applications [...] Full article
(This article belongs to the Special Issue Defects in Crystals)

Research

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14 pages, 5980 KiB  
Article
Effects of Pulsed Magnetic Fields of Different Intensities on Dislocation Density, Residual Stress, and Hardness of Cr4Mo4V Steel
by Mingdong Hou, Kejian Li, Xiaogang Li, Xu Zhang, Shaoshi Rui, Yao Wu and Zhipeng Cai
Crystals 2020, 10(2), 115; https://doi.org/10.3390/cryst10020115 - 13 Feb 2020
Cited by 28 | Viewed by 3848
Abstract
To study the effects of pulsed magnetic fields of different intensities on the dislocation density, residual stress, and hardness of Cr4Mo4V steel, magnetic treatment is conducted at 0, 1.0, 1.3, 1.5, 2.0, and 2.5 T. The dislocation density and residual stress are measured [...] Read more.
To study the effects of pulsed magnetic fields of different intensities on the dislocation density, residual stress, and hardness of Cr4Mo4V steel, magnetic treatment is conducted at 0, 1.0, 1.3, 1.5, 2.0, and 2.5 T. The dislocation density and residual stress are measured using Electron Backscatter Diffraction (EBSD) and X-ray technique, respectively. The results reveal the dislocation density and compressive residual stress decrease at lower magnetic fields such as 1.0 T and 1.3 T, while they increase at higher magnetic fields such as 2.0 T and 2.5 T. The average value of kernel averaged misorientation (KAM) and compressive residual stress decrease about 10.4% and 15.8%, respectively, at 1.0 T, while they increase about 5.88% and 18.2%, respectively, at 2.5 T. The average value of hardness decreases about 3.5% at 1.0 T, from 817 HV to 787 HV. With the increments of intensities, the hardness of the treated samples increases. The hardness essentially remains unchanged at 2.0 T and 2.5 T. The reason for the dislocation motion under the action of pulsed magnetic fields is discussed. Full article
(This article belongs to the Special Issue Defects in Crystals)
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7 pages, 2064 KiB  
Article
Incorporation of Cd-Doping in SnO2
by J. Schell, T. T. Dang and A. W. Carbonari
Crystals 2020, 10(1), 35; https://doi.org/10.3390/cryst10010035 - 13 Jan 2020
Cited by 4 | Viewed by 2538
Abstract
Tuning the electrical properties of materials by controlling their doping content has been utilized for decades in semiconducting oxides. Here, an atomistic view is successfully employed to obtain local information on the charge distribution and point defects in Cd-doped SnO2. We [...] Read more.
Tuning the electrical properties of materials by controlling their doping content has been utilized for decades in semiconducting oxides. Here, an atomistic view is successfully employed to obtain local information on the charge distribution and point defects in Cd-doped SnO2. We present a study that uses the time-differential perturbed gamma–gamma angular correlations (TDPAC) method in samples prepared by using a sol–gel approach. The hyperfine field parameters are presented as functions of the annealing temperature in pellet samples to show the evolution of incorporating Cd dopants into the crystal lattice. Additionally, the system was characterized with X-ray fluorescence, electron dispersive spectroscopy, and scanning electron microscopy after the probe nuclei 111In(111Cd) decayed. The TDPAC results reveal that the probe ions were incorporated into two different local environments of the SnO2 lattice at temperatures up to 973 K for cation substitutional sites. Full article
(This article belongs to the Special Issue Defects in Crystals)
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10 pages, 4436 KiB  
Article
Study on Luminescence of KCl:Eu2+ Crystals after X-ray Irradiation at Room Temperature
by Yohichi Kohzuki and Tomiyasu Ohgaku
Crystals 2019, 9(7), 331; https://doi.org/10.3390/cryst9070331 - 28 Jun 2019
Cited by 7 | Viewed by 3139
Abstract
Bleaching with the F-light at the excitation bandpass of 20 nm results in the phenomenon that F-centre peak and thermoluminescence (TL) glow peaks due to Fz- and F-centres identically decrease with the F-bleach time, whereas TL glow [...] Read more.
Bleaching with the F-light at the excitation bandpass of 20 nm results in the phenomenon that F-centre peak and thermoluminescence (TL) glow peaks due to Fz- and F-centres identically decrease with the F-bleach time, whereas TL glow peak due to Fz-centre only remains almost constant irrespective of its time in the case of that at the excitation bandpass of 5 nm. Analysing the data on bleaching effects, absorption spectrum of X-ray irradiated KCl:Eu2+ crystal has a peak due to Fz-centre approximately within 20 nm of the wavelength 560 nm at F-centre peak. Electrons released from Fz-centres at 370 K and from F-centres at 450 K combine with Eu3+ ions, leading to the excited Eu2+ ions from which the luminescence at 420 nm is emitted. Full article
(This article belongs to the Special Issue Defects in Crystals)
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Review

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28 pages, 10753 KiB  
Review
Bent Crystal Design and Characterization for High-Energy Physics Experiments
by Marco Romagnoni, Vincenzo Guidi, Laura Bandiera, Davide De Salvador, Andrea Mazzolari, Francesco Sgarbossa, Mattia Soldani, Alexei Sytov and Melissa Tamisari
Crystals 2022, 12(9), 1263; https://doi.org/10.3390/cryst12091263 - 06 Sep 2022
Cited by 1 | Viewed by 2885
Abstract
Bent crystal are widely used as optics for X-rays, but via the phenomenon of planar channeling they may act as waveguide for relativistic charged particles beam as well, outperforming some of the traditional technologies currently employed. A physical description of the phenomenon and [...] Read more.
Bent crystal are widely used as optics for X-rays, but via the phenomenon of planar channeling they may act as waveguide for relativistic charged particles beam as well, outperforming some of the traditional technologies currently employed. A physical description of the phenomenon and the resulting potential for applications in a particle accelerator is reported. The elastic properties of the anisotropic crystal lattice medium are discussed, introducing different types of curvature which can enable a wide array of bending schemes optimized for each different case features. The technological development of machining strategy and bending solutions useful for the fabrication of crystals suitable in high energy particle manipulations are described. As well as the high precision characterization processes developed in order to satisfy the strict requirements for installation in an accelerator. Finally, the characterization of channeling phenomenon in bent crystal is described, pointing out several experimental setups suitable to comply each specific case constrains. Full article
(This article belongs to the Special Issue Defects in Crystals)
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13 pages, 2003 KiB  
Review
TDPAC Studies of Local Defects and Phenomena in Ferroics and Multiferroics
by Juliana Schell and Georg Marschick
Crystals 2019, 9(12), 611; https://doi.org/10.3390/cryst9120611 - 22 Nov 2019
Cited by 5 | Viewed by 2435
Abstract
We provide an overview of time-differential perturbed angular correlation (TDPAC) measurements of ferroic and multiferroic materials. Here, we explore chalcogenide spinels, lead titanate, lead zirconate, and bismuth ferrite, describing the use of TDPAC experiments to probe the physics of localized defects and the [...] Read more.
We provide an overview of time-differential perturbed angular correlation (TDPAC) measurements of ferroic and multiferroic materials. Here, we explore chalcogenide spinels, lead titanate, lead zirconate, and bismuth ferrite, describing the use of TDPAC experiments to probe the physics of localized defects and the various mechanisms that govern electronic and magnetic interactions, the coupling of the associated degrees of freedom, and the structural, charge, and orbital correlations for these materials. Full article
(This article belongs to the Special Issue Defects in Crystals)
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