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Crystals
Special Issues
Materials and Devices Grown via Molecular Beam Epitaxy
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Materials and Devices Grown via Molecular Beam Epitaxy

A special issue of Crystals (ISSN 2073-4352).

Deadline for manuscript submissions: 30 April 2024 | Viewed by 1255

Special Issue Editors

Dr. Daqian Guo

E-Mail Website
Guest Editor
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
Interests: III-V semidonductor materials; optoelectronics; MBE
Dr. Wuyang Ren

E-Mail Website
Guest Editor
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
Interests: semiconductors; materials physics; thermoelectrics; optoelectronics; molecular beam epitaxy
Prof. Dr. Thorsten Hesjedal

E-Mail Website
Guest Editor
Clarendon Laboratory, Department of Physics, University of Oxford, Parks Road, Oxford OX1 3PU, UK
Interests: molecular beam epitaxy; topological materials; two-dimensional (2D) layered materials

Special Issue Information

Dear Colleagues,

Molecular beam epitaxy (MBE) is a highly advanced deposition technique renowned for its capacity to produce high-quality thin films. Its unique capability to precisely control deposition processes at the atomic level empowers researchers to push the boundaries of material science, enabling unparalleled exploration of physical properties and phenomena. While MBE has effectively served its purpose for decades, ongoing progress is characterized by the continuous development of innovative materials, novel structures, as well as advanced growth techniques and characterization methods.

The aim of this Special Issue, focused on "Materials and Devices Fabricated via Molecular Beam Epitaxy," is to assemble and showcase the wealth of innovative concepts involving novel structures, pioneering growth techniques, device physics and characterisation methods that have been realized through the application of molecular beam epitaxy. We warmly welcome the submission of both research articles and review articles. All submitted manuscripts will undergo standard journal peer-review procedures, and those accepted for publication will be featured in this Special Issue.

Dr. Daqian Guo
Dr. Wuyang Ren
Prof. Dr. Thorsten Hesjedal
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • epitaxy growth
  • lattice-mismatch epitaxy
  • heterostructure
  • superlattice
  • characterization methods
  • semiconductor devices

Published Papers (1 paper)

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Research

11 pages, 3112 KiB  
Article
Improvement of Mg-Doped GaN with Shutter-Controlled Process in Plasma-Assisted Molecular Beam Epitaxy
by Ying-Chieh Wang, Ikai Lo, Yu-Chung Lin, Cheng-Da Tsai and Ting-Chang Chang
Crystals 2023, 13(6), 907; https://doi.org/10.3390/cryst13060907 - 01 Jun 2023
Viewed by 971
Abstract
Mg-doped GaN was grown by plasma-assisted molecular beam epitaxy (PAMBE) on a Fe-doped GaN template substrate by employing a shutter-controlled process. The transition from n-type to p-type conductivity of Mg-doped GaN in relation to the N/Ga flux ratio was studied. The [...] Read more.
Mg-doped GaN was grown by plasma-assisted molecular beam epitaxy (PAMBE) on a Fe-doped GaN template substrate by employing a shutter-controlled process. The transition from n-type to p-type conductivity of Mg-doped GaN in relation to the N/Ga flux ratio was studied. The highest p-type carrier concentration in this series was 3.12 × 1018 cm−3 under the most N-rich condition. By modulating the shutters of different effusion cells for the shutter-controlled process, a wide growth window for p-type GaN was obtained. It was found that the presence of Mg flux effectively prevents the formation of structural defects in GaN epi-layers, resulting in the improvement of crystal quality and carrier mobility. Full article
(This article belongs to the Special Issue Materials and Devices Grown via Molecular Beam Epitaxy)
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