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Synaptic Devices Using Nanomaterials for Neuromorphic System
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Synaptic Devices Using Nanomaterials for Neuromorphic System

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Surface Characterization, Deposition and Modification".

Deadline for manuscript submissions: closed (20 November 2021) | Viewed by 7576

Special Issue Editor

Prof. Dr. Sungjun Kim

E-Mail Website
Guest Editor
Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea
Interests: emerging memory; memristor; resistive switching; synaptic devices; neuromorphic; metal oxides
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Neuromorphic system is actively being studied as an alternative to overcome the von Neumann data bottleneck. The weight update in synaptic devices including two-terminal and three-terminal types is very important for neuromorphic system on the hardware level. Low energy, a lot of multi-level conductance levels, high dynamic range, high endurance, long retention, and linear and symmetric weight updates are important requirements for a good synaptic device. By introducing nanomaterials such as nanoparticles, organic molecules, inorganic–organic hybrids and composites, ferroelectricity, alloy materials, quantum dots, graphene, 2D materials, as well as conventional oxide and nitride materials, the synaptic device’s performances can be enhanced. Synaptic devices include a transistor-type three-terminal, PRAM, MRAM, as well as two-terminal memristors for this Special Issue.

Prof. Sungjun Kim
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Memristor
  • Resistive switching
  • Synaptic devices
  • Neuromorphic
  • Nanomaterials

Published Papers (3 papers)

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Research

8 pages, 1889 KiB  
Article
Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures
by Byeongjeong Kim, Chandreswar Mahata, Hojeong Ryu, Muhammad Ismail, Byung-Do Yang and Sungjun Kim
Coatings 2021, 11(4), 451; https://doi.org/10.3390/coatings11040451 - 14 Apr 2021
Cited by 4 | Viewed by 1701
Abstract
Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx/p-Si memory device. The bipolar switching [...] Read more.
Resistive random-access memory (RRAM) devices are noticeable next generation memory devices. However, only few studies have been conducted regarding RRAM devices made of alloy. In this paper, we investigate the resistive switching behaviors of an Au/Ti/HfTiOx/p-Si memory device. The bipolar switching is characterized depending on compliance current under DC sweep mode. Good retention in the low-resistance state and high-resistance state is attained for nonvolatile memory and long-term memory in a synapse device. For practical switching operation, the pulse transient characteristics are studied for set and reset processes. Moreover, a synaptic weight change is achieved by a moderate pulse input for the potentiation and depression characteristics of the synaptic device. We reveal that the high-resistance state and low-resistance state are dominated by Schottky emissions. Full article
(This article belongs to the Special Issue Synaptic Devices Using Nanomaterials for Neuromorphic System)
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6 pages, 1861 KiB  
Article
Reduced Operation Current of Oxygen-Doped ZrN Based Resistive Switching Memory Devices Fabricated by the Radio Frequency Sputtering Method
by Jinsu Jung, Dongjoo Bae, Sungho Kim and Hee-Dong Kim
Coatings 2021, 11(2), 197; https://doi.org/10.3390/coatings11020197 - 9 Feb 2021
Cited by 6 | Viewed by 2381
Abstract
In this work, we report the feasibility of resistive switching (RS) properties of oxygen-doped zirconium nitride (O-doped ZrN) films with platinum (Pt) and platinum silicide (PtSi) bottom electrode (BE), produced by a sputtering method. Compared to O-doped ZrN using Pt BE, when Pt/ [...] Read more.
In this work, we report the feasibility of resistive switching (RS) properties of oxygen-doped zirconium nitride (O-doped ZrN) films with platinum (Pt) and platinum silicide (PtSi) bottom electrode (BE), produced by a sputtering method. Compared to O-doped ZrN using Pt BE, when Pt/p-Si was used as BE, the foaming voltage slightly increased, but the operation current was reduced by about two orders. In particular, the average reset current of the O-doped ZrN memory cells was reduced to 50 µA, which can delay deterioration of the element, and reduces power consumption. Therefore, the use of PtSi as the BE of the O-doped ZrN films is considered highly effective in improving reliability through reduction of operating current of the memory cells. Full article
(This article belongs to the Special Issue Synaptic Devices Using Nanomaterials for Neuromorphic System)
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8 pages, 1682 KiB  
Article
Enhancing Short-Term Plasticity by Inserting a Thin TiO2 Layer in WOx-Based Resistive Switching Memory
by Hyojong Cho and Sungjun Kim
Coatings 2020, 10(9), 908; https://doi.org/10.3390/coatings10090908 - 22 Sep 2020
Cited by 11 | Viewed by 2654
Abstract
In this work, we emulate biological synaptic properties such as long-term plasticity (LTP) and short-term plasticity (STP) in an artificial synaptic device with a TiN/TiO2/WOx/Pt structure. The graded WOx layer with oxygen vacancies is confirmed via X-ray photoelectron [...] Read more.
In this work, we emulate biological synaptic properties such as long-term plasticity (LTP) and short-term plasticity (STP) in an artificial synaptic device with a TiN/TiO2/WOx/Pt structure. The graded WOx layer with oxygen vacancies is confirmed via X-ray photoelectron spectroscopy (XPS) analysis. The control TiN/WOx/Pt device shows filamentary switching with abrupt set and gradual reset processes in DC sweep mode. The TiN/WOx/Pt device is vulnerable to set stuck because of negative set behavior, as verified by both DC sweep and pulse modes. The TiN/WOx/Pt device has good retention and can mimic long-term memory (LTM), including potentiation and depression, given repeated pulses. On the other hand, TiN/TiO2/WOx/Pt devices show non-filamentary type switching that is suitable for fine conductance modulation. Potentiation and depression are demonstrated in the TiN/TiO2 (2 nm)/WOx/Pt device with moderate conductance decay by application of identical repeated pulses. Short-term memory (STM) is demonstrated by varying the interval time of pulse inputs for the TiN/TiO2 (6 nm)/WOx/Pt device with a quick decay in conductance. Full article
(This article belongs to the Special Issue Synaptic Devices Using Nanomaterials for Neuromorphic System)
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