Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
4.7
3.4
Journals
Coatings
Special Issues
Semiconductor Thin Films and Coatings
share announcement

Semiconductor Thin Films and Coatings

A special issue of Coatings (ISSN 2079-6412). This special issue belongs to the section "Thin Films".

Deadline for manuscript submissions: 30 June 2024 | Viewed by 2310

Special Issue Editor

Prof. Dr. Choongik Kim

E-Mail Website
Guest Editor
Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, Korea
Interests: polymer thin films; semiconductors; dielectrics; surface engineering; self-assembled monolayers; coatings; organics; metal oxide; materials science; thin-film transistors; memory; photovoltaics; optoelectronics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor thin films and coatings play a vital role in the field of advanced materials and electronics, serving as the foundation for numerous technological advancements. These thin layers of semiconducting materials are engineered with precision to exhibit unique properties, enabling the development of high-performance devices such as transistors, solar cells, and sensors. The research and development of semiconductor thin films and coatings have become a focal point for scientists and engineers aiming to enhance device efficiency, reliability, and functionality. This research encompasses a wide range of topics, including deposition techniques, material characterization, interface engineering, and device fabrication. By exploring the intricacies of semiconductor thin films and coatings, researchers strive to unlock new possibilities and revolutionize industries such as information technology, renewable energy, and healthcare.

Therefore, we would like to invite you to submit your original research to this Coatings Special Issue entitled “Semiconductor Thin Films and Coatings”. The goal of this Special Issue is to explore all aspects of research related to semiconductor thin films and coatings through theoretical and application-oriented papers, experimental and numerical studies, case studies, and reviews.

We encourage you to contribute manuscripts containing scientific findings within the broad fields of semiconductor thin films and coatings. In particular, the topics of interest include, but are not limited to, the following:

  • Deposition techniques of semiconductor thin films;
  • Theoretical studies on semiconductor thin films;
  • Characterization of semiconductor thin films;
  • Interfacial engineering of semiconductor thin films;
  • Application of semiconductor thin films (optoelectronics, energy devices, biomedical devices, etc.).

Prof. Dr. Choongik Kim
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Coatings is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (2 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

17 pages, 3032 KiB  
Article
Further Characterization of the Polycrystalline p-Type β-Ga2O3 Films Grown through the Thermal Oxidation of GaN at 1000 to 1100 °C in a N2O Atmosphere
by Sufen Wei, Yi Liu, Qianqian Shi, Tinglin He, Feng Shi and Ming-kwei Lee
Coatings 2023, 13(9), 1509; https://doi.org/10.3390/coatings13091509 - 25 Aug 2023
Viewed by 860
Abstract
The development of good-conductivity p-type β-Ga2O3 is crucial for the realization of its devices and applications. In this study, nitrogen-doped p-type β-Ga2O3 films with the characteristics of enhanced conductivity were fabricated through the thermal oxidation of GaN [...] Read more.
The development of good-conductivity p-type β-Ga2O3 is crucial for the realization of its devices and applications. In this study, nitrogen-doped p-type β-Ga2O3 films with the characteristics of enhanced conductivity were fabricated through the thermal oxidation of GaN in a N2O atmosphere. To obtain insights into the underlying mechanism of the thermally activated transformation process, additional measurements of the oxidized films were performed at temperatures of 1000, 1050, and 1100 °C. Room-temperature photoluminescence (PL) spectra showed a moderate ultraviolet emission peak at 246 nm, confirming the generation of gallium oxide with a band gap of approximately 5.0 eV. The characteristics of polycrystalline and anisotropic growth were confirmed via normalized X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and selected-area electron diffraction (SAED) patterns. The amount of incorporated nitrogen was analyzed via secondary ion mass spectrometry (SIMS) to examine the effects of oxidation temperature. Furthermore, the ionization energy of the acceptor in the films oxidized at 1000, 1050, and 1100 °C was calculated and analyzed using temperature-dependent Hall test results. The results indicated that nitrogen doping played a significant role in determining p-type electrical properties. The activation energy of polycrystalline β-Ga2O3, prepared via the thermal oxidation of GaN in the N2O atmosphere, was estimated to be 147.175 kJ·mol−1 using an Arrhenius plot. This value was significantly lower than that obtained via both the dry and wet oxidation of GaN under O2 ambient conditions, thus confirming the higher efficiency of the thermal oxidation of GaN in a N2O atmosphere. Full article
(This article belongs to the Special Issue Semiconductor Thin Films and Coatings)
►▼ Show Figures

Figure 1

12 pages, 1407 KiB  
Article
Solution-Processable Benzo[b]thieno[2,3-d]thiophene Derivatives as Organic Semiconductors for Organic Thin-Film Transistors
by Seongyun Kim, Soomin Ryu, Jihae Ahn, Dongkyu Kim, Assunta Marrocchi, Choongik Kim and SungYong Seo
Coatings 2023, 13(8), 1417; https://doi.org/10.3390/coatings13081417 - 12 Aug 2023
Viewed by 1181
Abstract
Two new benzo[b]thieno[2,3-d]thiophene (BTT) derivatives, 2-(benzo[b]thiophen-5-yl)benzo[b]thieno[2,3-d]thiophene (compound 2), and 2-(benzo[b]thieno[2,3-d]thiophene-2yl)dibenzo[b,d]thiophene (compound 3) have been synthesized and utilized as solution-processable small molecular organic semiconductors for organic [...] Read more.
Two new benzo[b]thieno[2,3-d]thiophene (BTT) derivatives, 2-(benzo[b]thiophen-5-yl)benzo[b]thieno[2,3-d]thiophene (compound 2), and 2-(benzo[b]thieno[2,3-d]thiophene-2yl)dibenzo[b,d]thiophene (compound 3) have been synthesized and utilized as solution-processable small molecular organic semiconductors for organic field-effect transistors (OFETs). The physicochemical characteristics of the recently created substances were analyzed using thermogravimetric analysis (TGA), differential scanning calorimeter (DSC), and UV-vis spectroscopy. Subsequently, the above-mentioned substances were employed as semiconductor layers in bottom-gate/top-contact OFETs through solution shearing methods for device fabrication, and their electrical performances were meticulously evaluated. The outcoming OFET device displayed p-channel behavior, demonstrating hole mobility of up to 0.005cm2/Vs and a current on/off ratio higher than 106. Full article
(This article belongs to the Special Issue Semiconductor Thin Films and Coatings)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-2
Back to TopTop