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Journal: Electronics, 2021
Volume: 10
Number: 1954

Article: A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application
Authors: by Chen Wang, Xiuli Zhao, Hao Liu, Xin Chao, Hao Zhu and Qingqing Sun
Link: https://www.mdpi.com/2079-9292/10/16/1954

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