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Journal: Micromachines, 2023
Volume: 14
Number: 1582
Article:
Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications
Authors:
by
An-Chen Liu, Po-Tsung Tu, Hsin-Chu Chen, Yung-Yu Lai, Po-Chun Yeh and Hao-Chung Kuo
Link:
https://www.mdpi.com/2072-666X/14/8/1582
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