Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor
, Yi-Jie Kang 1, Hsien-Chin Chiu 1,2,*, Hsuan-Ling Kao 1,2, Kuo-Hsiung Chu 3, Hao-Chung Kuo 3, Chih-Tien Chen 4 and Kuo-Jen Chang 4Round 1
Reviewer 1 Report
1200V p-GaN based power devices is promising for future applications. However, the reliability is still a crucial issue. In the present work, the peak electric field in the device is modulated by employing the field plate design, and finally the off-state breakdown voltage is increased. The results is well present. I think it can be published as it is.
Author Response
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Reviewer 2 Report
The author proposed and investigated the field plate (FP) p-GaN power high–electron mobility transistors for high-power applications.
The content and novelty of the work are the strength of the paper.
I recommend this research article for publishing in Micromachines.
Author Response
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Reviewer 3 Report
This paper is recommended for Micromachines. The authors have done significant work. There are some suggestions in the paper:
Page 1, Line 31: The better terms are “high-electron mobility and high critical breakdown electric field.
Page 1, Line 36: A typo: normally-off operation
Page 2, Line 46: As the authors mentioned in the subsequent lines that the HEMT repetitively switches between ON and OFF states. I understand that there must be drain voltage variation during the power switching operation. However, in the current version, it is stated that “devices are operated between a high drain voltage and a low drain voltage”; seems like misleading. Please rewrite this sentence, it may confuse the reader.
Page 3, Line 102: There is an error “6-inch thick (15.24 cm thick) Si substrates”. Here, the numerical value indicates the diameter of the Si wafer (not thickness!), typically the Si substrates have the thickness about 300-400 µm. So, please correct as “6-inch diameter (15.24 cm dia.) Si substrates”
Page 3, Line 110: Ar+ ion-implantation
Page 3, Line 142: Agilent 1505A power device analyzer
Author Response
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