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Journal: Micromachines, 2019
Volume: 10
Number: 779

Article: Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers
Authors: by Ying Zhang, Haiting Xie and Chengyuan Dong
Link: https://www.mdpi.com/2072-666X/10/11/779

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