Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance
Abstract
:1. Introduction
2. Experimental Details
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
- Roy, K.; Mukhopadhyay, S.; Mahmoodi-Meimand, H. Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits. IEEE Electron Device Lett. 2003, 91, 305–327. [Google Scholar] [CrossRef] [Green Version]
- Ogura, S.; Tsang, P.J.; Walker, W.W.; Critchlow, D.L.; Shepard, J.F. Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor. IEEE J. Solid-State Circuits 1980, 15, 424–432. [Google Scholar] [CrossRef]
- Hook, T.B.; Adler, E.; Guarin, F.; Lukaitis, J.; Rovedo, N.; Schruefer, K. The effects of fluorine on parametrics and reliability in a 0.18-µm 3.5/6.8 nm dual gate oxide CMOS technology. IEEE Trans Electron Devices 2001, 48, 1346–1353. [Google Scholar] [CrossRef]
- Razouk, R.R.; Deal, B.E. Dependence of interface state density on silicon thermal oxidation process variables. J. Electrochem. Soc. 1979, 126, 1573. [Google Scholar] [CrossRef]
- Park, J.-Y.; Moon, D.-I.; Lee, G.-B.; Choi, Y.-K. Curing of Aged Gate Dielectric by the Self-Heating Effect in MOSFETs. IEEE Trans. Electron Devices 2020, 67, 777–788. [Google Scholar] [CrossRef]
- Kizilyalli, I.C.; Lyding, J.W.; Hess, K. Deuterium post-metal annealing of MOSFET’s for improved hot carrier reliability. IEEE Electron Device Lett. 1997, 18, 81–83. [Google Scholar] [CrossRef]
- Clark, W.F.; Ference, T.G.; Hook, T.B.; Watson, K.M.; Mittl, S.W.; Burnham, J.S. Process stability of deuterium-annealed MOSFET’s. IEEE Electron Dev. Lett. 1999, 1, 48–50. [Google Scholar] [CrossRef]
- Lyding, J.W.; Hess, K.; Kizilyalli, I.C. Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing. Appl. Phys. Lett. 1996, 10, 2526–2528. [Google Scholar] [CrossRef] [Green Version]
- Bu, J.; White, M.H. Effects of two-step high temperature deuterium anneals on SONOS nonvolatile memory devices. IEEE Electron Device Lett. 2001, 1, 17–19. [Google Scholar]
- Mertens, H.; Ritzenthaler, R.; Arimura, H.; Franco, J.; Sebaai, F.; Hikavyy, A.; Pawlak, B.J.; Machkaoutsan, V.; Devriendt, K.; Tsvetanova, D.; et al. Si-cap-free SiGe p-channel FinFETs and gate-all-around transistors in a replacement metal gate process: Interface trap density reduction and performance improvement by highpressure deuterium anneal. In Proceedings of the Symposium on VLSI Technology, Kyoto, Japan, 16–18 June 2015; pp. T142–T143. [Google Scholar]
- Chang, H.S.; Hwang, H. Enhancement of Data Retention Time for 512-Mb DRAMs Using High-Pressure Deuterium Annealing. IEEE Trans. Electron Devices 2008, 12, 3599–3601. [Google Scholar] [CrossRef]
- Arora, N. MOSFET Models for VLSI Circuit Simulation, 1st ed.; Springer: New York, NY, USA, 1993; p. 167. [Google Scholar]
- Lee, J.; Cheng, K.; Chen, Z.; Hess, K.; Lyding, J.W.; Kim, Y.-K.; Lee, H.-S.; Kim, Y.-W.; Suh, K.-P. Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors. IEEE Electron Device Lett. 2000, 21, 221–223. [Google Scholar]
- Chasin, A.; Franco, J.; Bury, E.; Ritzenthaler, R.; Litta, E.; Spessot, A.; Horiguchi, N.; Linten, D.; Kaczer, B. Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. In Proceedings of the 2020 IEEE International Reliability Physics Symposium (IRPS), Dallas, TX, USA, 28 April–30 May 2020. [Google Scholar]
- Park, J.-Y.; Yoo, T.J.; Yu, J.-M.; Lee, B.-H.; Choi, Y.-K. Impact of Post-Metal Annealing with Deuterium or Nitrogen for Curing a Gate Dielectric Using Joule Heat Driven by Punch-Through Current. IEEE Electron Device Lett. 2020, 42, 276–279. [Google Scholar] [CrossRef]
- Yu, J.M.; Park, J.Y.; Yoo, T.J.; Han, J.K.; Yun, D.H.; Lee, G.B.; Hur, J.; Lee, B.H.; Kim, S.Y.; Lee, B.H.; et al. Quantitative analysis of high-pressure Deuterium annealing effects on vertically stacked Gate-All-Around SONOS memory. IEEE Trans. Electron. Devices 2020, 67, 3903–3907. [Google Scholar] [CrossRef]
- Sung, J.-Y.; Jeong, J.-K.; Ko, W.-S.; Byun, J.-H.; Lee, H.-D.; Lee, G.-W. High Pressure Deuterium Passivation of Charge Trapping Layer for Nonvolatile Memory Applications. Micromachines 2021, 12, 1316. [Google Scholar] [CrossRef] [PubMed]
Parameters | Value |
---|---|
Gate length (µm) | 5 to 50 |
Channel width (µm) | 280 |
Equivalent oxide thickness (nm) | 30 |
Gas mixture for annealing (%) | N2:D2 = 96:4 |
Annealing temperature and pressure | 450 °C, 5 bar |
Annealing time for a cycle (min) | 60 |
Number of samples (#) | 79 |
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. |
© 2022 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
Share and Cite
Wang, D.-H.; Ku, J.-Y.; Jung, D.-H.; Lee, K.-S.; Shin, W.C.; Yang, B.-D.; Park, J.-Y. Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance. Materials 2022, 15, 1960. https://doi.org/10.3390/ma15051960
Wang D-H, Ku J-Y, Jung D-H, Lee K-S, Shin WC, Yang B-D, Park J-Y. Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance. Materials. 2022; 15(5):1960. https://doi.org/10.3390/ma15051960
Chicago/Turabian StyleWang, Dong-Hyun, Ja-Yun Ku, Dae-Han Jung, Khwang-Sun Lee, Woo Cheol Shin, Byung-Do Yang, and Jun-Young Park. 2022. "Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance" Materials 15, no. 5: 1960. https://doi.org/10.3390/ma15051960