Special Issue "Emerging GaN Circuits and Devices Design for Various Applications"

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".

Deadline for manuscript submissions: closed (15 August 2023) | Viewed by 150

Special Issue Editor

School of Electronic Engineering, Kyonggi University, Suwon 16227, Republic of Korea
Interests: broadband; high power RF power amplifier; 5G and IOT RF system and parts development
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Gallium nitride semiconductors are power semiconductors that have recently emerged. The GaN power semiconductor market is expected to grow at a compound annual growth rate of more than 70%, mainly in the fields of high-speed chargers, 5G/6G communications, and electric vehicles. Recently, many governments have selected GaN-integrated circuits for 6G communication power amplifiers as one of the future leading R&D items.

GaN material represents the highest energy band gap and charge density among semiconductor materials. These characteristics allow GaN transistors to produce high output power densities at high frequencies. In particular, GaN HEMTs on SiC substrates exhibit higher thermal conductivity. GaN-on-Si devices are also being actively researched due to their economic feasibility and possibility of integration with other silicon-based integrated circuits.

In this Special Issue, we invite researchers to submit their original research or review articles that are concerned with “Emerging GaN Circuits and Devices Design for Various Applications”.


(1) GaN MMICs (wideband amplifiers, integrated transceivers, high power switches, etc.)

(2) High-power GaN amplifier modules

(3) High-voltage GaN driver circuits for electric vehicles 

(4) Highly efficient GaN DC-DC/buck/boost converters

(5) 5G-millimeter-wave GaN power amplifiers

(6) 2G/3G/LTE GaN power amplifier modules

(7) Robust and highly linear GaN low noise amplifiers/mixers/switches/attenuators

(8) GaN-on-Si, GaN-on-SiC HEMTs’ development and device modeling 

(9) GaN device phenomena (self-heating effect, trap effect, frequency dispersion, kink effect, etc.)

(10) 6G GaN IC applications

Prof. Dr. Jihoon Kim
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • GaN MMIC
  • power amplifiers
  • high power
  • high efficiency
  • driver circuits
  • 5G
  • 6G
  • GaN HEMT

Published Papers

There is no accepted submissions to this special issue at this moment.
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