Emerging GaN Circuits and Devices Design for Various Applications
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Circuit and Signal Processing".
Deadline for manuscript submissions: closed (15 August 2023) | Viewed by 197
Special Issue Editor
Interests: broadband; high power RF power amplifier; 5G and IOT RF system and parts development
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Gallium nitride semiconductors are power semiconductors that have recently emerged. The GaN power semiconductor market is expected to grow at a compound annual growth rate of more than 70%, mainly in the fields of high-speed chargers, 5G/6G communications, and electric vehicles. Recently, many governments have selected GaN-integrated circuits for 6G communication power amplifiers as one of the future leading R&D items.
GaN material represents the highest energy band gap and charge density among semiconductor materials. These characteristics allow GaN transistors to produce high output power densities at high frequencies. In particular, GaN HEMTs on SiC substrates exhibit higher thermal conductivity. GaN-on-Si devices are also being actively researched due to their economic feasibility and possibility of integration with other silicon-based integrated circuits.
In this Special Issue, we invite researchers to submit their original research or review articles that are concerned with “Emerging GaN Circuits and Devices Design for Various Applications”.
Topic
(1) GaN MMICs (wideband amplifiers, integrated transceivers, high power switches, etc.)
(2) High-power GaN amplifier modules
(3) High-voltage GaN driver circuits for electric vehicles
(4) Highly efficient GaN DC-DC/buck/boost converters
(5) 5G-millimeter-wave GaN power amplifiers
(6) 2G/3G/LTE GaN power amplifier modules
(7) Robust and highly linear GaN low noise amplifiers/mixers/switches/attenuators
(8) GaN-on-Si, GaN-on-SiC HEMTs’ development and device modeling
(9) GaN device phenomena (self-heating effect, trap effect, frequency dispersion, kink effect, etc.)
(10) 6G GaN IC applications
Prof. Dr. Jihoon Kim
Guest Editor
Manuscript Submission Information
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Keywords
- GaN MMIC
- power amplifiers
- high power
- high efficiency
- driver circuits
- 5G
- 6G
- GaN HEMT
