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Review
Peer-Review Record

Nano-Structured Dilute Magnetic Semiconductors for Efficient Spintronics at Room Temperature

Magnetochemistry 2020, 6(1), 15; https://doi.org/10.3390/magnetochemistry6010015
by Akanksha Gupta 1, Rui Zhang 2, Pramod Kumar 3, Vinod Kumar 4,5,* and Anup Kumar 6,*
Reviewer 1: Anonymous
Reviewer 2: Anonymous
Reviewer 3: Anonymous
Magnetochemistry 2020, 6(1), 15; https://doi.org/10.3390/magnetochemistry6010015
Submission received: 20 September 2019 / Revised: 12 February 2020 / Accepted: 14 February 2020 / Published: 16 March 2020

Round 1

Reviewer 1 Report

This is a comprehensive review. I recommend accept to publish it.

Author Response

Dear Reviewer,

We thanks reviewer for the positive comments. Although we have modified the content of manuscript for better English and presentation.

Thanks Again

Anup Kumar

Reviewer 2 Report

The authors have given a small review on diluted magnetic semiconductors. The focuses are on oxide based room temperature ferromagnetism. The review is not complete, needing significant revision. 

The title should be oxide based diluted magnetic semiconductors. The references are not enough (around 70). A normal paper references could be more than this manuscript.  The author has mentioned TiO2, SnO2, and ZnO. In2O3 as a very important part of oxide based diluted magnetic semiconductor should be added.  For TiO2 based diluted magnetic semiconductors, the first reported oxide based diluted magnetic semiconductor (Y. Matsumoto et al.,Science 291, 854 (2001).) and other important references (Y. Yamada et al., Science 332, 1065 (2011). and Phys. Rev. Lett. 117, 227202 (2016)) should also be added.  For oxide based diluted magnetic semiconductors, defects have been believed one of the origins of ferromagnetism. Hence, discussions for these should be discussed. References such as pure oxide, DOI: 10.1103/PhysRevB.73.132404; nonmangetic element doping including Phys. Rev. Lett. 99, 127201 (2007); Phys. Rev. Lett. 104, 137201 (2010) and other related references.   In ZnO based diluted magnetic semiconductor, strong ferromagnetism with high coercivity should also be mentioned, such as Nd doped ZnO nanowires (Nano letters 12 (8), 3994-4000) and Applied Physics Letters 104 (1), 012405. In addition, clustering induced ferromagnetism should also be discussed such as doi:10.1103/PhysRevLett.91.077205 (2003). 

After these revision, the review could be accepted for publication. 

Author Response

Dear Reviewer,

We have added articles related to DMO in  revised manuscript as suggested by reviewer. Also, we have added literature on DMO In2O3. We have focus on the probable mechanism of the DM/FM in these oxides and reported only relevant articles.

Thank you so much

Anup Kumar

Author Response File: Author Response.pdf

Reviewer 3 Report

The field of nano-structured dilute magnetic semiconductor materials is a growing field of great fundamental and applied interest. It is inherently multidisciplinary. There have already been almost 10,000 articles on this subject, including 181 reviews. These are mainly from the fields of physics, materials science and engineering. Few reviews report on chemistry. The proposed manuscript presents a review of the structure-property relationships of magnetic semiconductor materials with a particular focus on SnO2, TiO2 and ZnO materials doped with transition ions. It aims to make a link between the nature of the defects and the observed properties. Unfortunately, the manuscript remains rather superficial and does not really highlight the latest advances. The whole remains vague and looks more like a summary without taking a step back from the state of the art. It is not possible to consider this manuscript for publication.

Author Response

Dear Reviewer,

This review only limits to basic binary oxides mainly SnO2, TiO2, ZnO and In2O3. We have focus on the probable mechanism of the DM/FM in these oxides and reported only relevant articles. Also we have added some more basic articles related to DMO in revision.

Thank you so much for your consideration

Anup Kumar

Author Response File: Author Response.pdf

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