Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Supplementary Materials
Author Contributions
Funding
Conflicts of Interest
References
- Kahng, D.; Sze, S.M. A floating gate and its application to memory devices. IEEE Trans. Electron. Dev. 1967, 14, 629. [Google Scholar] [CrossRef]
- White, M.H.; Adams, D.A.; Bu, J. On the go with SONOS. IEEE Circuits Devices Mag. 2000, 16, 22–31. [Google Scholar] [CrossRef]
- Kim, J.H.; Choi, J.B. Long-Term Electron Leakage Mechanisms through ONO Interpoly Dielectric in Stacked-Gate EEPROM Cells. IEEE Trans. Electron. Dev. 2004, 51, 2048–2053. [Google Scholar] [CrossRef]
- Bu, J.; White, M.H. Retention reliability enhanced SONOS NVSM with scaled programming voltage. IEEE Aerosp. Conf. 2002, 5, 2383–2390. [Google Scholar]
- Swift, C.T.; Chindalore, G.L.; Harber, K.; Harp, T.S.; Hoefler, A.; Hong, C.M.; Ingersoll, P.A.; Li, C.B.; Prinz, E.J.; Yater, J.A. An embedded 90 nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase. In Proceedings of the Electron Devices Meeting, San Francisco, CA, USA, 8–11 December 2002; pp. 927–930. [Google Scholar]
- Wang, X.; Kwong, D.-L. A novel high-κ SONOS memory using TaN/Al2O3/Ta2O5/HfO2/Si structure for fast speed and long retention operation. IEEE Trans. Electron. Dev. 2006, 53, 78–82. [Google Scholar] [CrossRef]
- Wang, X.; Liu, J.; Bai, W.; Kwong, D.-L. A novel MONOS-type nonvolatile memory using high-κ dielectrics for improved data retention and programming speed. IEEE Trans. Electron. Dev. 2004, 51, 597–602. [Google Scholar] [CrossRef]
- Hsu, T.-H.; You, H.-C.; Ko, F.-H.; Lei, T.-F. PolySi-SiO2-ZrO2-SiO2-Si flash memory incorporating a sol-gel-derived ZrO2 charge trapping layer. J. Electrochem. Soc. 2006, 153, G934–G937. [Google Scholar] [CrossRef]
- Lee, C.-H.; Hur, S.-H.; Shin, Y.-C.; Choi, J.-H.; Park, D.-G.; Kim, K. Charge-trapping device structure of SiO2/SiN/high-k dielectric Al2O3 for high-density flash memory. Appl. Phys. Lett. 2005, 86, 152908. [Google Scholar] [CrossRef]
- Yang, S.-M.; Chien, C.-H.; Huang, J.-J.; Lei, T.-F.; Tsai, M.-J.; Lee, L.-S. Cerium oxide nanocrystals for nonvolatile memory applications. Appl. Phys. Lett. 2007, 91, 262104. [Google Scholar] [CrossRef]
- You, H.-C.; Hsu, T.-H.; Ko, F.-H.; Huang, J.-W.; Yang, W.-L.; Lei, T.-F. SONOS-type flash memory using an HfO2 as a charge trapping layer deposited by the sol-gel spin-coating method. IEEE Electron. Device Lett. 2006, 27, 653–655. [Google Scholar]
- Tan, Y.N.; Chim, W.K.; Cho, B.J.; Choi, W.K. Over-Erase Phenomenon in SONOS-Type Flash Memory and its Minimization Using a Hafnium Oxide Charge Storage Layer. IEEE Trans. Electron. Dev. 2004, 51, 1143–1147. [Google Scholar] [CrossRef]
- Specht, M.; Reisinger, H.; Stadele, M.; Hofmann, F.; Gschwandtner, A.; Landgraf, E.; Luyken, R.J.; Schulz, T.; Hartwich, J.; Dreeskornfeld, L.; et al. Retention time of novel charge trapping memories using Al2O3 dielectrics. In Proceedings of the 33rd European Solid-State Device Research Conference, Estoril, Portugal, 16–18 September 2003; pp. 155–158. [Google Scholar]
- Tan, Y.N.; Chim, W.K.; Choi, W.K.; Joo, M.S.; Ng, T.H.; Cho, B.J. High-k HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation. In Proceedings of the IEEE International IEDM Technical Digest, San Francisco, CA, USA, 13–15 December 2004. [Google Scholar]
- Sugizaki, T.; Kohayashi, M.; Ishidao, M.; Minakata, H.; Yamaguchi, M.; Tamura, Y.; Sugiyama, Y.; Nakanishi, T.; Tanaka, H. Novel multi-bit SONOS type flash memory using a high-κ charge trapping layer. In Proceedings of the 2003 Symposium on VLSI Technology, Kyoto, Japan, 12–14 June 2003; pp. 27–28. [Google Scholar]
- Pan, T.M.; Yeh, W.W. A high-k Y2O3 charge trapping layer for nonvolatile memory application. Appl. Phys. Lett. 2008, 92, 173506. [Google Scholar] [CrossRef]
- Soares, M.R.N.; Leite, S.; Nico, C.; Peres, M.; Fernandes, A.J.S.; Graca, M.P.F.; Monteiro, R.; Monteiro, T.; Costa, F.M. Effect of processing method on physical properties of Nb2O5. J. Eur. Ceram. Soc. 2011, 31, 501–506. [Google Scholar] [CrossRef]
- Van Dover, R.B. Amorphous lanthanide-doped TiOx dielectric films. Appl. Phys. Lett. 1999, 74, 3041. [Google Scholar] [CrossRef]
- Kao, C.H.; Chen, C.C.; Huang, C.Y.; Lin, C.J.; Ou, J.C. Investigation of Ti-doped Gd2O3 charge trapping layer with HfO2 blocking oxide for memory application. Thin Solid Films 2012, 520, 3857–3861. [Google Scholar] [CrossRef]
- Chen, F.H.; Pan, T.M.; Chiu, F.C. Metal–Oxide–High-k-Oxide–Silicon Memory Device Using a Ti-Doped Dy2O3 Charge-Trapping Layer and Al2O3 Blocking Layer. IEEE Trans. Electron. Devices 2011, 58, 3847–3851. [Google Scholar] [CrossRef]
- Schroeder, T.; Lupina, G.; Dabrowski, J.; Mane, A.; Wenger, C.; Lippert, G.; Müssig, H.-J. Titanium-added praseodymium silicate high-k layers on Si (001). Appl. Phys. Lett. 2005, 87, 022902. [Google Scholar] [CrossRef]
- Kao, C.H.; Chen, H.; Chen, S.Z.; Hung, S.-H.; Chen, C.Y.; He, Y.-Y.; Lin, S.-R.; Hsieh, K.-M.; Lin, M.-H. Effects of annealing on CeO2-based flash memories. Vacuum 2015, 118, 69–73. [Google Scholar] [CrossRef]
- Kao, C.H.; Chen, H.; Chen, C.C.; Chen, C.P.; Wang, J.J.; Chen, C.Y.; Chen, Y.T.; Lin, J.H.; Chu, Y.C. Comparison of electrical and physical characteristics between Gd2O3 and Ti-doped GdTixOy trapping layers. Microelectron. Eng. 2015, 138, 2122. [Google Scholar] [CrossRef]
- Ostraat, M.L.; De Blauwe, J.W.; Green, M.L.; Bell, L.D.; Brongersma, M.L.; Casperson, J.; Flagan, R.C.; Atwater, H.A. Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices. Appl. Phys. Lett. 2001, 79, 433. [Google Scholar] [CrossRef]
- De Blauwe, J. Nanocrystal nonvolatile memory devices. IEEE Trans. Nanotechnol. 2002, 99, 72. [Google Scholar] [CrossRef]
- Ruffinoa, F.; Grimaldi, M.G.; Giannazzo, F.; Roccaforte, F.; Raineri, V. Nanoscale voltage tunable tunnel rectifier by gold nanostructures embedded in SiO2. Appl. Phys. Lett. 2006, 89, 263108. [Google Scholar] [CrossRef]
- Pan, T.-M.; Chen, F.-H.; Jung, J.-S. A high-k Tb2TiO5 nanocrystal memory. Appl. Phys. Lett. 2010, 96, 102904. [Google Scholar] [CrossRef]
- Pan, T.-M.; Yu, T.-Y. Silicon-oxide-nitride-oxide-silicon-type flash memory with a high-k NdTiO3 charge trapping layer. Appl. Phys. Lett. 2008, 92, 112906. [Google Scholar] [CrossRef]
- Van Hal, R.E.G.; Eijkel, J.C.T.; Bergveld, P. A general model to describe the electrostatic potential at electrolyte oxide interfaces. Adv. Colloid Interface Sci. 1996, 69, 31–62. [Google Scholar] [CrossRef] [Green Version]
- Pan, T.-M.; Yu, T.-Y.; Wang, C. High-k Nd2O3 and NdTiO3 Charge Trapping Layers for Nonvolatile Memory Metal-SiO2-High-k-SiO2-Silicon Devices. J. Electrochem. 2008, 155, G218. [Google Scholar] [CrossRef]
- Ruffino, F.; Grimaldi, M.G. Atomic force microscopy study of the growth mechanisms of nanostructured sputtered Au film on Si(111): Evolution with film thickness and annealing time. J. Appl. Phys. 2010, 107, 104321. [Google Scholar] [CrossRef]
- Palasnatzas, G.; Krim, J. Scanning Tunneling Microscopy Study of the Thick Film Limit of Kinetic Roughening. Phys. Rev. Lett. 1994, 73, 3564. [Google Scholar] [CrossRef] [PubMed]
- Ruffino, F.; Grimaldi, M.G.; Giannazzo, F.; Roccaforte, F.; Raineri, V. Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO2. Nanoscale Res. Lett. 2009, 4, 262. [Google Scholar] [CrossRef] [PubMed]
- Chevrier, J.; Le Thanh, V.; Buys, R.; Derrien, J. A RHEED Study of Epitaxial Growth of Iron on a Silicon Surface: Experimental Evidence for Kinetic Roughening. Europhys. Lett. 1991, 16, 737. [Google Scholar] [CrossRef]
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Wang, J.C.; Kao, C.H.; Wu, C.H.; Lin, C.F.; Lin, C.J. Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory. Nanomaterials 2018, 8, 799. https://doi.org/10.3390/nano8100799
Wang JC, Kao CH, Wu CH, Lin CF, Lin CJ. Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory. Nanomaterials. 2018; 8(10):799. https://doi.org/10.3390/nano8100799
Chicago/Turabian StyleWang, Jer Chyi, Chyuan Haur Kao, Chien Hung Wu, Chun Fu Lin, and Chih Ju Lin. 2018. "Nb2O5 and Ti-Doped Nb2O5 Charge Trapping Nano-Layers Applied in Flash Memory" Nanomaterials 8, no. 10: 799. https://doi.org/10.3390/nano8100799