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Editorial

Nanotechnology for Electronic Materials and Devices

1
Consiglio Nazionale della Ricerche (CNR), Istituto per la Microelettronica e Microsistemi (IMM), Strada VIII, 5, 95121 Catania, Italy
2
Centre for Energy Research, Institute for Technical Physics and Materials Science Research, Konkoly-Thege, 29-33, 1121 Budapest, Hungary
3
Department of Physics, Chemistry and Biology (IFM), University of Linkoping, Campus Valla, Fysikhuset, SE-581 83 Linkoping, Sweden
*
Author to whom correspondence should be addressed.
Nanomaterials 2022, 12(19), 3319; https://doi.org/10.3390/nano12193319
Submission received: 7 September 2022 / Accepted: 13 September 2022 / Published: 23 September 2022
(This article belongs to the Special Issue Nanotechnology for Electronic Materials and Devices)
The historical scaling down of electronics devices is no longer the main goal of the International Roadmap for Devices and Systems [1], but the integration of electronic components at the nanoscale is an emerging focus, coupled with the need for novel nanomaterials, emerging characterization methods and device fabrication techniques at the nanoscale. The growing interest in nanomaterials [2] can be associated with their unique properties, which are not present in bulk or thick films, and they are currently finding rapid application in many technological areas (such as high-frequency electronics [3], power devices [4], displays, energy conversion systems, energy storage [5], photovoltaics and sensors). At the same time, fabrication methods based on novel processes and/or approaches must be developed for the synthesis of the nanostructured materials, as well as accurate characterization techniques at the nanoscale for the materials and their interfaces.
In this context, the aim of this Special Issue, entitled “Nanotechnology for Electronic Materials and Devices”, is to collect dedicated papers in several nanotechnological fields. The issue consists of eleven selected regular papers focusing on the latest developments in nanomaterials and nanotechnologies for electronic devices and sensors. Thus, topics such as approaches to synthesis, advanced characterization methods and device fabrication techniques have been covered in the present issue.
We editors are aware that, due to the many topics related to the use of nanotechnology for electronics, the present issue cannot provide a comprehensive presentation of the arguments; however, we are confident that the main general areas have been discussed and can be summarized in the following research topics:
(i)
Nanoscaled materials and their properties: several papers in this issue focus on nanolaminated oxide combinations (such as hafnium oxide/iron oxide [6] or tungsten oxide/molybdenum oxides [7]) as well as on 2D materials (molybdenum disulphides and its rare-earth-doped-thin layers [8]).
(ii)
Moreover, innovative synthesis approaches have been described in some papers for nanomaterials and thin films, such as aluminium nitrides [9], silicon whiskers [10] or vanadium-oxide-rich layers [11].
(iii)
Other paper focus on advanced nanoscale characterization, mainly based on scanning-probe methods (scanning non linear dielectric microscopy [12] and high-resolution scanning capacitance spectroscopy [13]), as well as on surface optical techniques (photoluminescence and spectroscopic ellipsometry) [14].
(iv)
Finally, some papers are dedicated to device performances [15] and circuit analysis [16], providing evidence that it is crucial to move from research to technological development to control the quality of innovative products and functionalities.
We editors are grateful to all the authors for submitting their scientific results to the present Special Issue and we hope that Nanomaterials readership will find interesting imputs in the wider scenario of electronical applications of nanotechnology.

Author Contributions

P.F., R.L.N., B.P. and J.E. contributed equally to the writing, review and editing of the manuscript. All authors have read and agreed to the published version of the manuscript.

Funding

This article received no external funding.

Acknowledgments

We are grateful to all the authors for submitting their scientific results to the present Special Issue and we deeply acknowledge Keyco Li for the kind assistance.

Conflicts of Interest

The authors declare no conflict of interest.

References

  1. International Roadmap for Devices and Systems (IRDS™) 2021 Edition. Available online: https://irds.ieee.org/editions/2021/executive-summary (accessed on 21 September 2022).
  2. Bytler, S.Z.; Hollen, S.M.; Cao, L.Y.; Cui, Y.; Gupta, J.A.; Gutierrez, H.R.; Heinz, T.F.; Hong, S.S.; Huang, J.X.; Ismach, A.F.; et al. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene. ACS Nano 2013, 7, 2898. [Google Scholar] [CrossRef]
  3. Lo Nigro, R.; Fiorenza, P.; Greco, G.; Schilirò, E.; Roccaforte, F. Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices. Materials 2022, 15, 2898. [Google Scholar] [CrossRef] [PubMed]
  4. Bose, B.K. Power electronics-an emerging technology. IEEE Trans. Ind. Electron. 1989, 36, 403. [Google Scholar] [CrossRef]
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  7. Fried, M.; Bogar, R.; Takacs, D.; Labadi, Z.; Horvath, Z.E.; Zoinai, Z. Investigation of Combinatorial WO3-MoO3 Mixed Layers by Spectroscopic Ellipsometry Using Different Optical Models. Nanomaterials 2022, 12, 2421. [Google Scholar] [CrossRef]
  8. Li, S.; Tian, S.; Yao, Y.; He, M.; Chen, L.; Zhang, Y.; Zhai, J. Gallic Enhanced Electrical Performance of Monolayer MoS2 with Rare Earth Element Sm Doping. Nanomaterials 2021, 11, 769. [Google Scholar] [CrossRef] [PubMed]
  9. Schilirò, E.; Giannazzo, F.; Di Franco, S.; Greco, G.; Fiorenza, P.; Roccaforte, F.; Prystawko, P.; Kruszewski, P.; Leszczynski, M.; Cora, I.; et al. Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition. Nanomaterials 2021, 11, 3316. [Google Scholar] [CrossRef] [PubMed]
  10. Pecz, B.; Vouroutzis, N.; Radnoczi, G.Z.; Frangis, N.; Stoemenos, J. Structural Characteristics of the Si Whiskers Grown by Ni-Metal-Induced-Lateral-Crystallization. Nanomaterials 2021, 11, 1878. [Google Scholar] [CrossRef] [PubMed]
  11. Posa, L.; Molnar, G.; Kalas, B.; Baji, Z.; Czigany, Z.; Petrik, P.; Volk, J. A Rational Fabrication Method for Low Switching-Temperature VO2. Nanomaterials 2021, 11, 212. [Google Scholar] [CrossRef] [PubMed]
  12. Yamasue, K.; Cho, Y. Boxcar Averaging Scanning Nonlinear Dielectric Microscopy. Nanomaterials 2022, 12, 794. [Google Scholar] [CrossRef] [PubMed]
  13. Fiorenza, P.; Alessandrino, M.S.; Carbone, B.; Russo, A.; Roccaforte, F.; Giannazzo, F. High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy. Nanomaterials 2021, 11, 1626. [Google Scholar] [CrossRef] [PubMed]
  14. Panasci, S.E.; Koos, A.; Schilirò, E.; Di Franco, S.; Greco, G.; Fiorenza, P.; Roccaforte, F.; Agnello, S.; Cannas, M.; Gelardi, F.M.; et al. Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization. Nanomaterials 2022, 12, 182. [Google Scholar] [CrossRef] [PubMed]
  15. Gao, Q.; Zhang, C.; Liu, P.; Hu, Y.; Yang, K.; Yi, Z.; Lui, L.; Pan, X.; Zhang, Z.; Yang, J.; et al. Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS2Transistors. Nanomaterials 2021, 11, 1594. [Google Scholar] [CrossRef] [PubMed]
  16. Park, J.; Ra, C.; Lim, J.; Jeon, J. Device and Circuit Analysis of Double Gate Field Effect Transistor with Mono-Layer WS2-Channel at Sub-2 nm Technology Node. Nanomaterials 2022, 12, 2299. [Google Scholar] [CrossRef] [PubMed]
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MDPI and ACS Style

Lo Nigro, R.; Fiorenza, P.; Pécz, B.; Eriksson, J. Nanotechnology for Electronic Materials and Devices. Nanomaterials 2022, 12, 3319. https://doi.org/10.3390/nano12193319

AMA Style

Lo Nigro R, Fiorenza P, Pécz B, Eriksson J. Nanotechnology for Electronic Materials and Devices. Nanomaterials. 2022; 12(19):3319. https://doi.org/10.3390/nano12193319

Chicago/Turabian Style

Lo Nigro, Raffaella, Patrick Fiorenza, Béla Pécz, and Jens Eriksson. 2022. "Nanotechnology for Electronic Materials and Devices" Nanomaterials 12, no. 19: 3319. https://doi.org/10.3390/nano12193319

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