Influence of N2/O2 Partial Pressure Ratio during Channel Layer Deposition on the Temperature and Light Stability of a-InGaZnO TFTs
Abstract
:1. Introduction
2. Experiments
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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PN/O (%) | Vth (V) | μFE (cm2/Vs) | SS (V/dec) | Ion/off |
---|---|---|---|---|
0 | 5.0 | 2.2 | 0.8 | >108 |
20 | 3.8 | 8.0 | 0.6 | >109 |
40 | 7.0 | 1.2 | 0.9 | >107 |
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Huang, X.; Zhou, D.; Xu, W. Influence of N2/O2 Partial Pressure Ratio during Channel Layer Deposition on the Temperature and Light Stability of a-InGaZnO TFTs. Appl. Sci. 2019, 9, 1880. https://doi.org/10.3390/app9091880
Huang X, Zhou D, Xu W. Influence of N2/O2 Partial Pressure Ratio during Channel Layer Deposition on the Temperature and Light Stability of a-InGaZnO TFTs. Applied Sciences. 2019; 9(9):1880. https://doi.org/10.3390/app9091880
Chicago/Turabian StyleHuang, Xiaoming, Dong Zhou, and Weizong Xu. 2019. "Influence of N2/O2 Partial Pressure Ratio during Channel Layer Deposition on the Temperature and Light Stability of a-InGaZnO TFTs" Applied Sciences 9, no. 9: 1880. https://doi.org/10.3390/app9091880