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Journal: Appl. Sci., 2018
Volume: 8
Number: 2402

Article: Influence of Quantum-Well Number and an AlN Electron Blocking Layer on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes
Authors: by Shuxin Tan, Jicai Zhang, Takashi Egawa and Gang Chen
Link: https://www.mdpi.com/2076-3417/8/12/2402

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