Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Conflicts of Interest
References
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Song, C.-H.; Kong, M.; Jang, H.; Lee, S.T.; Park, H.-H.; Kim, D.; Song, K.; Ko, D.-H.; Shin, C.-S. Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method. Crystals 2022, 12, 1846. https://doi.org/10.3390/cryst12121846
Song C-H, Kong M, Jang H, Lee ST, Park H-H, Kim D, Song K, Ko D-H, Shin C-S. Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method. Crystals. 2022; 12(12):1846. https://doi.org/10.3390/cryst12121846
Chicago/Turabian StyleSong, Chang-Hun, Minwoo Kong, Hyunchul Jang, Sang Tae Lee, Hyeong-Ho Park, Donghyun Kim, Keunman Song, Dae-Hong Ko, and Chan-Soo Shin. 2022. "Morphology Transition of Te-Doped InAs Nanowire on InP(111)B Grown Using MOCVD Method" Crystals 12, no. 12: 1846. https://doi.org/10.3390/cryst12121846