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Journal: Micromachines, 2023
Volume: 14
Number: 1042
Article:
Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization
Authors:
by
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu and Yue Hao
Link:
https://www.mdpi.com/2072-666X/14/5/1042
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