Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET
Abstract
:1. Introduction
2. Materials and Methods
3. Results and Discussion
3.1. NBTI Degradation of I–V Characteristic
3.2. Construction of NBTI Lifetime Prediction Model
3.2.1. Stress Time Dependence of NBTI Degradation
3.2.2. Gate Bias Dependence of NBTI Degradation
3.2.3. Temperature Dependence of NBTI Degradation
3.2.4. Channel Length Dependence of NBTI Degradation
3.3. Influence of Floating Body on NBTI of SOI Devices
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Device | Body Contact | Operating Voltage | Gate Oxide Thickness | Width-Length- Ratios (W/L) |
---|---|---|---|---|
Core | T-Gate | 1.2 V | 2 nm | 0.5 μm/0.13 μm |
0.5 μm/0.18 μm | ||||
0.5 μm/0.5 μm | ||||
I/O | T-Gate | 3.3 V | 7 nm | 0.5 μm/1.2 μm |
Floating Body | 3.3 V | 7 nm | 0.5 μm/1.2 μm |
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Yang, Y.; Liu, H.; Yang, K.; Gao, Z.; Liu, Z. Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET. Micromachines 2022, 13, 808. https://doi.org/10.3390/mi13050808
Yang Y, Liu H, Yang K, Gao Z, Liu Z. Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET. Micromachines. 2022; 13(5):808. https://doi.org/10.3390/mi13050808
Chicago/Turabian StyleYang, Yafang, Hongxia Liu, Kun Yang, Zihou Gao, and Zixu Liu. 2022. "Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET" Micromachines 13, no. 5: 808. https://doi.org/10.3390/mi13050808