Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer
Abstract
:1. Introduction
2. Materials and Methods
2.1. Experimental Design
2.2. Characterization of the P-type 4H-SiC Epitaxial Layer
2.3. Fabrication of 4H-SiC Cantilever Beam
3. Results and Discussion
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Li, Y.; Liang, T.; Lei, C.; Hong, Y.; Li, W.; Li, Z.; Ghaffar, A.; Li, Q.; Xiong, J. Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer. Micromachines 2019, 10, 629. https://doi.org/10.3390/mi10100629
Li Y, Liang T, Lei C, Hong Y, Li W, Li Z, Ghaffar A, Li Q, Xiong J. Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer. Micromachines. 2019; 10(10):629. https://doi.org/10.3390/mi10100629
Chicago/Turabian StyleLi, Yongwei, Ting Liang, Cheng Lei, Yingping Hong, Wangwang Li, Zhiqiang Li, Abdul Ghaffar, Qiang Li, and Jijun Xiong. 2019. "Quantitative Analysis of Piezoresistive Characteristic Based on a P-type 4H-SiC Epitaxial Layer" Micromachines 10, no. 10: 629. https://doi.org/10.3390/mi10100629