Thin-Film Photovoltaics: Constituents and Devices

Topic Information

Dear Colleagues,

As a researcher that focuses on thin-film materials for photovoltaic (PV), sensing, photocatalytic and other optoelectronic applications, I have observed a conceptual opportunity for joining a plethora of similar reports under the frame of a new Topic, “Thin-Film Photovoltaics: Constituents and Devices”. Existing journals often host PV-related reports, though with limited PV recognition. I am confident that this Topic can foster visibility for reports related to thin-film solar cells. Thin-film (TF) PV systems are of particular interest as they struggle in their transition from fundamental research into commercially available solutions. Generally, TFPVs are cheap but with limited efficiencies, so to boost the extent of the ongoing early stage research grouping of reports (theoretical and experimental) on TFPV science, as well as TFPV constituents, processing, modeling and performance, a favorable strategy arises for advancing the in-depth understanding of the mechanisms behind the design of PV systems and TF constituents. Particularly preferred are reports that condense interdisciplinary information, corroborating well with the complex multidisciplinary technical nature of emerging TFPV systems. The Topic aims to publish research relevant to TFPV: (1) design—novel compositions, compounds, morphologies, structures, concepts, modeling; (2) synthesis—new routes and modifications, constituents, development, and post-processing; (3) deposition—new routes, modifications, tools, and development; (4) characterization—techniques monitoring (micro)structural, optoelectronic, thermodynamic, and other materials’ repercussions, including novel or particularly complex in situ or in operando multi-technique experiments; (5) compatibility—interfacing issues (surface compatibility, boundary conditions); (6) functionality—performance, testing, and stability. Subsections: o Preparation and characterization of general TFPV constituent materials and layers o Perovskite TF solar cells (PSC) o Organic TF photovoltaics (OPV) o Quantum dot TF solar cells (QDSC) o CIGS, CZTS, CdTe TF photovoltaics o Dye-sensitized TF solar cells (DSSC) o Modeling and computing TF performance

Dr. Vilko Mandić
Dr. Ivana Panžić
Dr. Ivana Capan
Dr. Luka Pavić
Topic Editors

Keywords

Participating Journals

Journal Name	Impact Factor	CiteScore	Launched Year	First Decision (median)	APC
Catalysts catalysts	4.501	5.5	2011	12.7 Days	2200 CHF	Submit
Coatings coatings	3.236	3.9	2011	13.5 Days	2200 CHF	Submit
Materials materials	3.748	4.7	2008	13.9 Days	2300 CHF	Submit
Molecules molecules	4.927	5.9	1996	13.4 Days	2300 CHF	Submit
Nanomaterials nanomaterials	5.719	6.6	2011	12.7 Days	2600 CHF	Submit

Published Papers (4 papers)

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All Catalysts Coatings Materials Molecules Nanomaterials

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Open AccessReview

Hole Transport Materials for Tin-Based Perovskite Solar Cells: Properties, Progress, Prospects

by

Xinyao Chen

,

Jin Cheng

,

Linfeng He

,

Longjiang Zhao

,

Chunqian Zhang

,

Aiying Pang

and

Junming Li

Molecules 2023, 28(9), 3787; https://doi.org/10.3390/molecules28093787 - 28 Apr 2023

Viewed by 583

Abstract

The power conversion efficiency of modern perovskite solar cells has surpassed that of commercial photovoltaic technology, showing great potential for commercial applications. However, the current high-performance perovskite solar cells all contain toxic lead elements, blocking their progress toward industrialization. Lead-free tin-based perovskite solar [...] Read more.

The power conversion efficiency of modern perovskite solar cells has surpassed that of commercial photovoltaic technology, showing great potential for commercial applications. However, the current high-performance perovskite solar cells all contain toxic lead elements, blocking their progress toward industrialization. Lead-free tin-based perovskite solar cells have attracted tremendous research interest, and more than 14% power conversion efficiency has been achieved. In tin-based perovskite, Sn²⁺ is easily oxidized to Sn⁴⁺ in air. During this process, two additional electrons are introduced to form a heavy p-type doping perovskite layer, necessitating the production of hole transport materials different from that of lead-based perovskite devices or organic solar cells. In this review, for the first time, we summarize the hole transport materials used in the development of tin-based perovskite solar cells, describe the impact of different hole transport materials on the performance of tin-based perovskite solar cell devices, and summarize the recent progress of hole transport materials. Lastly, the development direction of lead-free tin-based perovskite devices in terms of hole transport materials is discussed based on their current development status. This comprehensive review contributes to the development of efficient, stable, and environmentally friendly tin-based perovskite devices and provides guidance for the hole transport layer material design. Full article

(This article belongs to the Topic Thin-Film Photovoltaics: Constituents and Devices)

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Open AccessArticle

Investigation on Preparation and Performance of High Ga CIGS Absorbers and Their Solar Cells

by

Xiaoyu Lv

,

Zilong Zheng

,

Ming Zhao

,

Hanpeng Wang

and

Daming Zhuang

Materials 2023, 16(7), 2806; https://doi.org/10.3390/ma16072806 - 31 Mar 2023

Viewed by 510

Abstract

Tandem solar cells usually use a wide band gap absorber for top cell. The band gap of CuIn_(1−x)Ga_xSe₂ can be changed from 1.04 eV to 1.68 eV with the ratio of Ga/(In+Ga) from 0 to 1. When the [...] Read more.

Tandem solar cells usually use a wide band gap absorber for top cell. The band gap of CuIn_(1−x)Ga_xSe₂ can be changed from 1.04 eV to 1.68 eV with the ratio of Ga/(In+Ga) from 0 to 1. When the ratio of Ga/(In+Ga) is over 0.7, the band gap of CIGS absorber is over 1.48 eV. CIGS absorber with a high Ga content is a possible candidate one for the top cell. In this work, CuInGa precursors were prepared by magnetron sputtering with CuIn and CuGa targets, and CIGS absorbers were prepared by selenization annealing. The Ga/(In+Ga) is changed by changing the thickness of CuIn and CuGa layers. Additionally, CIGS solar cells were prepared using CdS buffer layer. The effects of Ga content on CIGS thin film and CIGS solar cell were studied. The band gap was measured by PL and EQE. The results show that using structure of CuIn/CuGa precursors can make the band gap of CIGS present a gradient band gap, which can obtain a high open circuit voltage and high short circuit current of the device. With the decrease in Ga content, the efficiency of the solar cell increases gradually. Additionally, the highest efficiency of the CIGS solar cells is 11.58% when the ratio of Ga/(In+Ga) is 0.72. The value of Voc is 702 mV. CIGS with high Ga content shows a great potential for the top cell of the tandem solar cell. Full article

(This article belongs to the Topic Thin-Film Photovoltaics: Constituents and Devices)

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Open AccessArticle

Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe₂ Layer Formation at the CIGSe/Mo Hetero-Interface

by

Fazliyana ‘Izzati Za’abar

,

Ahmad Wafi Mahmood Zuhdi

,

Camellia Doroody

,

Puvaneswaran Chelvanathan

,

Yulisa Yusoff

,

Siti Fazlili Abdullah

,

Mohd. Shaparuddin Bahrudin

,

Wan Sabeng Wan Adini

,

Ibrahim Ahmad

,

Wan Syakirah Wan Abdullah

and

Nowshad Amin

Materials 2023, 16(6), 2497; https://doi.org/10.3390/ma16062497 - 21 Mar 2023

Viewed by 541

Abstract

The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe₂ interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the [...] Read more.

The effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe₂ interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 Ω/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe₂, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe₂ layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe₂. The CIGSe/Mo hetero-contact, including the MoSe₂ layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe₂ layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe₂ thickness. Consequently, it addresses the importance of MoSe₂ structural properties for improved CIGSe solar cell performance and stability. Full article

(This article belongs to the Topic Thin-Film Photovoltaics: Constituents and Devices)

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Open AccessArticle

Optical Absorption in N-Dimensional Colloidal Quantum Dot Arrays: Influence of Stoichiometry and Applications in Intermediate Band Solar Cells

by

Rebeca V. H. Hahn

,

Salvador Rodríguez-Bolívar

,

Panagiotis Rodosthenous

,

Erik S. Skibinsky-Gitlin

,

Marco Califano

and

Francisco M. Gómez-Campos

Nanomaterials 2022, 12(19), 3387; https://doi.org/10.3390/nano12193387 - 27 Sep 2022

Cited by 1 | Viewed by 787

Abstract

We present a theoretical atomistic study of the optical properties of non-toxic InX (X = P, As, Sb) colloidal quantum dot arrays for application in photovoltaics. We focus on the electronic structure and optical absorption and on their dependence on array dimensionality and [...] Read more.

We present a theoretical atomistic study of the optical properties of non-toxic InX (X = P, As, Sb) colloidal quantum dot arrays for application in photovoltaics. We focus on the electronic structure and optical absorption and on their dependence on array dimensionality and surface stoichiometry motivated by the rapid development of experimental techniques to achieve high periodicity and colloidal quantum dot characteristics. The homogeneous response of colloidal quantum dot arrays to different light polarizations is also investigated. Our results shed light on the optical behaviour of these novel multi-dimensional nanomaterials and identify some of them as ideal building blocks for intermediate band solar cells. Full article

(This article belongs to the Topic Thin-Film Photovoltaics: Constituents and Devices)

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