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Nanogenerators and Self-Powered Optical Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Sensing and Imaging".

Deadline for manuscript submissions: closed (25 December 2023) | Viewed by 4486

Special Issue Editors


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Guest Editor
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 101400, China
Interests: nanogenerators; piezoelectric effect; self-powered sensors; light-polarization detectors; spin photocurrent; luminescent materials; solar cells

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Guest Editor
Collaborative Innovation Center of Steel Technology, University of Science and Technology Beijing, Beijing 100083, China
Interests: photodetector; nanogenerators; piezoelectric effect; sensors; cell; electrocatalysis; SiC

Special Issue Information

Dear Colleagues,

The aim of this Special Issue is to collect the latest achievements in the research and development of nanogenerators based on semiconductors and self-powered optical sensors. Self-powered optical sensors hold much potential due to their excellent energy-conservation, pollution-free, and high-responsivity properties, which is important for environmental monitoring, human–machine interaction, industrial quality control, and security. Apart from the fabrication of heterostructures or Schottcky contacts, nanogenerators are another technology able to realize high-performance self-powered optical sensors via the triboelectric, pyroelectric, and piezoelectric effects.

This Special Issue will focus on (1) self-powered optical sensors for electron/spin detection and imaging, and (2) nanogenerators used in self-powered optical sensors. Both review articles and original research papers describing the current state-of-the-art in this research field are strongly encouraged. 

The manuscripts should cover, but are not limited to, the following topics:

  • Triboelectric nanogenerators for light sensors;
  • Pyro-phototronics;
  • Piezoelectric effect for photodetectors;
  • Self-powered optical sensors;
  • Schottky optoelectronic sensors;
  • P–n junction photoelectric sensors;
  • Light polarization sensors;
  • Spin detection using optical methods;
  • Photovoltaic devices;
  • Optical imaging.

Prof. Dr. Laipan Zhu
Prof. Dr. Tao Yang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (2 papers)

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Research

13 pages, 4502 KiB  
Article
Mid-Infrared Sensor Based on Dirac Semimetal Coupling Structure
by Yuxiao Zou, Ying Liu and Guofeng Song
Sensors 2022, 22(6), 2116; https://doi.org/10.3390/s22062116 - 09 Mar 2022
Cited by 4 | Viewed by 1815
Abstract
A multilayer structure based on Dirac semimetals is investigated, where long-range surface plasmon resonance (LRSPR) of a dielectric layer/Dirac semimetal/dielectric layer are coupled with surface plasmon polaritons (SPPs) on graphene to substantially improve the Goos–Hänchen (GH) shift of Dirac semimetals in the mid-infrared [...] Read more.
A multilayer structure based on Dirac semimetals is investigated, where long-range surface plasmon resonance (LRSPR) of a dielectric layer/Dirac semimetal/dielectric layer are coupled with surface plasmon polaritons (SPPs) on graphene to substantially improve the Goos–Hänchen (GH) shift of Dirac semimetals in the mid-infrared band. This has important implications for the study of mid-infrared sensors. We studied the reflection coefficient and phase of this multilayer structure using a generalized transport matrix. We established that subtle changes in the refractive index of the sensing medium and the Fermi energy of the Dirac semimetal significantly affected the GH shift. Our numerical simulations show that the sensitivity of the coupling structure is more than 2.7×107 λ/RIU, which can be used as a potential new sensor application. The novelty of this work is the design of a tunable, highly sensitive, and simple structured mid-infrared sensor that takes advantage of the excellent properties of Dirac semimetals. Full article
(This article belongs to the Special Issue Nanogenerators and Self-Powered Optical Sensors)
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13 pages, 2194 KiB  
Article
Current-Induced Spin Photocurrent in GaAs at Room Temperature
by Yang Zhang, Yu Liu, Xiao-Lan Xue, Xiao-Lin Zeng, Jing Wu, Li-Wei Shi and Yong-Hai Chen
Sensors 2022, 22(1), 399; https://doi.org/10.3390/s22010399 - 05 Jan 2022
Viewed by 1912
Abstract
Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction [...] Read more.
Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature. Full article
(This article belongs to the Special Issue Nanogenerators and Self-Powered Optical Sensors)
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