Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
6.8
3.9
Journals
Sensors
Special Issues
Recent Progress on Advanced Infrared/Terahertz Photodetectors
sensors-logo
Submit to Sensors Review for Sensors Propose a Special Issue

Journal Menu

► Journal Menu

Journal Browser

► Journal Browser
share announcement

Recent Progress on Advanced Infrared/Terahertz Photodetectors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".

Deadline for manuscript submissions: closed (15 July 2023) | Viewed by 6825

Special Issue Editors

Dr. Lin Wang

E-Mail Website
Guest Editor
State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Interests: infrared and terahertz detection, nanophotonics, plasmonics
Dr. Xingjun Wang

E-Mail Website
Guest Editor
State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Interests: nanophotonics; plasmonics; infrared photodetectors
Dr. Xuguang Guo

E-Mail Website
Guest Editor
School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
Interests: infrared and terahertz photodetectors; nanophotonics

Special Issue Information

Dear Colleagues,

Infrared detectors play a pivotal role in many fields, including military, anti-terrorism, aerospace, astronomy, and bioassay, among many others. Since the first demonstration of a single-pixel detector two centuries ago, infrared technology has become indispensable to everyday life, in terms of sensitivity, intelligence, portability, etc., followed by the requirements of the standard SWaP rule, thanks to the progress of advanced manufacturing techniques and the rapid development of material growth. An infrared focal plane array made from different materials (HgCdTe, InSb, InAs, etc.) has greatly promoted the progress of infrared detection technology, and it is developing towards large area array, miniaturization, multi-color, intelligence, and high working temperature. Meanwhile, detectors based on type II superlattices, quantum wells, quantum dots, blocked impurity bands, superconductors, and Schottky diodes working at different wavelengths have also been developed and implemented successfully on the payload of space-borne satellites, aircraft, etc. In addition, novel two-dimensional (2D) materials with high mobility, flexibility, and versatile integration are highly desired to overcome the limitations of traditional materials in integration and extend the wavelength of photodetectors working at longer spectral regimes and higher temperatures. In order to upgrade the capacity of smart optical systems, multi-dimensional photon information perception beyond light intensity is expected to improve the ability to recognize complex objects and environments, and on-chip neuromorphic-integration technology based on artificial photonics is also in full swing. To overcome the limitations of material growth, operating principles, and manufacturing that existing infrared detectors confront, considerable efforts have been invested from material and device communities, and a plethora of innovative studies on new mechanisms, new materials, and advanced device structures have been conducted. This Special Issue aims to report the latest innovations in the principles, materials, and devices, mainly focusing on photodetectors from near-infrared to far-infrared (0.76~1000 μm).

Dr. Lin Wang
Dr. Xingjun Wang
Dr. Xuguang Guo
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • infrared/terahertz focal plane array
  • hot infrared photodetectors
  • avalanche photodiode
  • quantum well infrared/terahertz photodetectors
  • type II superlattice photodetectors
  • quantum dot photodetectors
  • blocked impurity band detectors
  • superconducting detectors
  • schottky-barrier terahertz detectors
  • 2D material-based detectors
  • multi-dimensional infrared detection

Published Papers (4 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

17 pages, 4201 KiB  
Article
The Microscopic Mechanisms of Nonlinear Rectification on Si-MOSFETs Terahertz Detector
by Yingdong Wei, Chenyu Yao, Li Han, Libo Zhang, Zhiqingzi Chen, Lin Wang, Wei Lu and Xiaoshuang Chen
Sensors 2023, 23(12), 5367; https://doi.org/10.3390/s23125367 - 06 Jun 2023
Cited by 1 | Viewed by 1212
Abstract
Studying the nonlinear photoresponse of different materials, including III-V semiconductors, two-dimensional materials and many others, is attracting burgeoning interest in the terahertz (THz) field. Especially, developing field-effect transistor (FET)-based THz detectors with preferred nonlinear plasma-wave mechanisms in terms of high sensitivity, compactness and [...] Read more.
Studying the nonlinear photoresponse of different materials, including III-V semiconductors, two-dimensional materials and many others, is attracting burgeoning interest in the terahertz (THz) field. Especially, developing field-effect transistor (FET)-based THz detectors with preferred nonlinear plasma-wave mechanisms in terms of high sensitivity, compactness and low cost is a high priority for advancing performance imaging or communication systems in daily life. However, as THz detectors continue to shrink in size, the impact of the hot-electron effect on device performance is impossible to ignore, and the physical process of THz conversion remains elusive. To reveal the underlying microscopic mechanisms, we have implemented drift-diffusion/hydrodynamic models via a self-consistent finite-element solution to understand the dynamics of carriers at the channel and the device structure dependence. By considering the hot-electron effect and doping dependence in our model, the competitive behavior between the nonlinear rectification and hot electron-induced photothermoelectric effect is clearly presented, and it is found that the optimized source doping concentrations can be utilized to reduce the hot-electron effect on the devices. Our results not only provide guidance for further device optimization but can also be extended to other novel electronic systems for studying THz nonlinear rectification. Full article
(This article belongs to the Special Issue Recent Progress on Advanced Infrared/Terahertz Photodetectors)
►▼ Show Figures

Figure 1

11 pages, 2828 KiB  
Communication
Visible Near-Infrared Photodetection Based on Ta2NiSe5/WSe2 van der Waals Heterostructures
by Pan Xiao, Shi Zhang, Libo Zhang, Jialiang Yang, Chaofan Shi, Li Han, Weiwei Tang and Bairen Zhu
Sensors 2023, 23(9), 4385; https://doi.org/10.3390/s23094385 - 29 Apr 2023
Cited by 2 | Viewed by 1591
Abstract
The increasing interest in two-dimensional materials with unique crystal structures and novel band characteristics has provided numerous new strategies and paradigms in the field of photodetection. However, as the demand for wide-spectrum detection increases, the size of integrated systems and the limitations of [...] Read more.
The increasing interest in two-dimensional materials with unique crystal structures and novel band characteristics has provided numerous new strategies and paradigms in the field of photodetection. However, as the demand for wide-spectrum detection increases, the size of integrated systems and the limitations of mission modules pose significant challenges to existing devices. In this paper, we present a van der Waals heterostructure photodetector based on Ta2NiSe5/WSe2, leveraging the inherent characteristics of heterostructures. Our results demonstrate that this detector exhibits excellent broad-spectrum detection ability from the visible to the infrared bands at room temperature, achieving an extremely high on/off ratio, without the need for an external bias voltage. Furthermore, compared to a pure material detector, it exhibits a fast response and low dark currents (~3.6 pA), with rise and fall times of 278 μs and 283 μs for the response rate, respectively. Our findings provide a promising method for wide-spectrum detection and enrich the diversity of room-temperature photoelectric detection. Full article
(This article belongs to the Special Issue Recent Progress on Advanced Infrared/Terahertz Photodetectors)
►▼ Show Figures

Figure 1

9 pages, 2318 KiB  
Communication
Monolayer Graphene Terahertz Detector Integrated with Artificial Microstructure
by Mengjie Jiang, Kaixuan Zhang, Xuyang Lv, Lin Wang, Libo Zhang, Li Han and Huaizhong Xing
Sensors 2023, 23(6), 3203; https://doi.org/10.3390/s23063203 - 17 Mar 2023
Cited by 1 | Viewed by 1526
Abstract
Graphene, known for its high carrier mobility and broad spectral response range, has proven to be a promising material in photodetection applications. However, its high dark current has limited its application as a high-sensitivity photodetector at room temperature, particularly for the detection of [...] Read more.
Graphene, known for its high carrier mobility and broad spectral response range, has proven to be a promising material in photodetection applications. However, its high dark current has limited its application as a high-sensitivity photodetector at room temperature, particularly for the detection of low-energy photons. Our research proposes a new approach for overcoming this challenge by designing lattice antennas with an asymmetric structure for use in combination with high-quality monolayers of graphene. This configuration is capable of sensitive detection of low-energy photons. The results show that the graphene terahertz detector-based microstructure antenna has a responsivity of 29 V·W−1 at 0.12 THz, a fast response time of 7 μs, and a noise equivalent power of less than 8.5 pW/Hz1/2. These results provide a new strategy for the development of graphene array-based room-temperature terahertz photodetectors. Full article
(This article belongs to the Special Issue Recent Progress on Advanced Infrared/Terahertz Photodetectors)
►▼ Show Figures

Figure 1

15 pages, 5070 KiB  
Article
High-Sensitivity 2D MoS2/1D MWCNT Hybrid Dimensional Heterostructure Photodetector
by Nanxin Fu, Jiazhen Zhang, Yuan He, Xuyang Lv, Shuguang Guo, Xingjun Wang, Bin Zhao, Gang Chen and Lin Wang
Sensors 2023, 23(6), 3104; https://doi.org/10.3390/s23063104 - 14 Mar 2023
Cited by 1 | Viewed by 1568
Abstract
A photodetector based on a hybrid dimensional heterostructure of laterally aligned multiwall carbon nanotubes (MWCNTs) and multilayered MoS2 was prepared using the micro-nano fixed-point transfer technique. Thanks to the high mobility of carbon nanotubes and the efficient interband absorption of MoS2 [...] Read more.
A photodetector based on a hybrid dimensional heterostructure of laterally aligned multiwall carbon nanotubes (MWCNTs) and multilayered MoS2 was prepared using the micro-nano fixed-point transfer technique. Thanks to the high mobility of carbon nanotubes and the efficient interband absorption of MoS2, broadband detection from visible to near-infrared (520–1060 nm) was achieved. The test results demonstrate that the MWCNT-MoS2 heterostructure-based photodetector device exhibits an exceptional responsivity, detectivity, and external quantum efficiency. Specifically, the device demonstrated a responsivity of 3.67 × 103 A/W (λ = 520 nm, Vds = 1 V) and 718 A/W (λ = 1060 nm, Vds = 1 V). Moreover, the detectivity (D*) of the device was found to be 1.2 × 1010 Jones (λ = 520 nm) and 1.5 × 109 Jones (λ = 1060 nm), respectively. The device also demonstrated external quantum efficiency (EQE) values of approximately 8.77 × 105% (λ = 520 nm) and 8.41 × 104% (λ = 1060 nm). This work achieves visible and infrared detection based on mixed-dimensional heterostructures and provides a new option for optoelectronic devices based on low-dimensional materials. Full article
(This article belongs to the Special Issue Recent Progress on Advanced Infrared/Terahertz Photodetectors)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-4
Back to TopTop