Topical Collection "Nanoarchitectonics of the Fourth Fundamental Electronic Component: Memristor, Meminductor and Memcapacitor"

A topical collection in Nanomaterials (ISSN 2079-4991). This collection belongs to the section "Nanoelectronics, Nanosensors and Devices".

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Editors

School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK
Interests: neuromorphic computing; sensors; data storage; chaos identification
1. Microelectronics Research Center, The University of Texas, Austin, TX 78758, USA
2. Intel Corporation, Hillsboro, OR 97124, USA
Interests: memristor; memcomputing; neuromorphic systems; biomimic smart system
Special Issues, Collections and Topics in MDPI journals
School of Electronic Engineering, Vellore Institute of Technology, Chennai, Tamil Nadu, India
Interests: metal oxide memristor; flexible wearable; artificial synapse; wearable artificial memristors

Topical Collection Information

Dear Colleagues,

In 1971, Chua L.O. theorised a new classical electronic, memristor, as the fourth component complementing resistor, inductor, and capacitor. Despite the early physical phenomenon observed by Gibbons and Beadle in 1964, the development of the memristor did not receive much attention until the Hewlett-Packard Lab first elucidated that the ionic electron dynamic was the cause behind the phenomenon in 2008. Since then, its unique resistance tunability has received significant attention due to its potential application for data storage. However, we later found that besides its resistance (R), its inductance (I) and capacitance (C) can also be tuned! And thus, it is also called the meminductor and the memcapacitor, respectively. Any of its R, I or C can be reconfigured and used for different purposes. Moreover, the architectonic of this device is small, fast and low-powered. Henceforth, we foresee that the application of this technology is endless; memories, sensors, neuromorphic computing, random number generators, physically unclonable functions, advanced logic and adaptive/reconfigurable circuits are just a few examples from its long list of potential applications in both analogue and digital electronics.

This Topical Collection addresses the latest advances in the nanoarchitechtonics of the memristor, meminductor and memcapacitor. We invite scientists and engineers to contribute original research, reviews and perspective articles to inspire and shape the future directive towards the deployment of this fourth component for next-generation electronics. The scope of this collection includes, but is not limited to:

  • Nanoscale fabrication, novel architecture and processes;
  • Surface/interface and electrical characterisation, methodology and benchmarking;
  • Multifunctional capabilities: in-memory computing, in-memory sensing and beyond;
  • Integration and embedded techniques.

Dr. Firman Simanjuntak
Dr. Yao-Feng Chang
Dr. Sridhar Chandrasekaran
Collection Editors

Manuscript Submission Information

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Keywords

  • nanofabrication
  • memristor
  • meminductor
  • memcapacitor
  • nanoarchitechtonic
  • nanoelectronics
  • neuromorphic computing

Published Papers (1 paper)

2023

13 pages, 2947 KiB  
Article
Artificial Synapse Emulated by Indium Tin Oxide/SiN/TaN Resistive Switching Device for Neuromorphic System
Nanomaterials 2023, 13(17), 2477; https://doi.org/10.3390/nano13172477 - 01 Sep 2023
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Abstract
In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical characteristics for a neuromorphic system. The device structure and chemical properties are investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. Uniform bipolar switching is achieved through DC sweep under [...] Read more.
In this paper, we fabricate an ITO/SiN/TaN memristor device and analyze its electrical characteristics for a neuromorphic system. The device structure and chemical properties are investigated using transmission electron microscopy and X-ray photoelectron spectroscopy. Uniform bipolar switching is achieved through DC sweep under a compliance current of 5 mA. Also, the analog reset phenomenon is observed by modulating the reset voltage for long-term memory. Additionally, short-term memory characteristics are obtained by controlling the strength of the pulse response. Finally, bio-inspired synaptic characteristics are emulated using Hebbian learning rules such as spike-rate-dependent plasticity (SRDP) and spike-timing-dependent plasticity (STDP). As a result, we believe that the coexistence of short-term and long-term memories in the ITO/SiN/TaN device can provide flexibility in device design in future neuromorphic applications. Full article
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