Semiconductor Nanowires: From Synthesis and Characterization to Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (25 January 2022) | Viewed by 33599

Special Issue Editor

Complutense University of Madrid, Madrid, Spain
Interests: Gallium oxide, gallium nitride, nanowires, electron microscopy, luminescence spectroscopy, complex architectures, doping, rare earth, transition metal, optical cavity

Special Issue Information

Dear Colleagues,

Nanowires – nanostructures with 1D aspect – have attracted huge attention of scientists from different fields during the last decades. In fact, they are one of the most studied types of nanostructured materials, having applications in fields such as electronics, photonics, energy, nano-bio interfaces or quantum devices. Particularly, semiconductor nanowires show unique properties with enormous versatility and are being explored theoretically and experimentally from both the fundamental and applied points of view.

The numerous growth and synthesis approaches allow fabrication of single nanowires as well as complex nanowire architectures with tuned physical and chemical properties, thoroughly studied thanks to advanced characterization techniques. Applications of nanowires in devices include nano-diodes and transistors, photonic structures such as LEDs and nano-lasers, sensors, ballistic conductors or quantum devices.

This special issue is aimed at reporting research on the different aspects related to semiconductor nanowires, spanning from their synthesis and characterization with advanced techniques, to applications in devices in which they are key elements.

As a guideline, the topics covered in this issue include (but are not limited to):

  • Synthesis and growth
  • Complex architectures: axial and radial heterostructures, branched, patterned, etc.
  • Doping and defect engineering
  • Groups IV, II-VI, III-V, wide- and ultrawide-bandgap semiconducting oxides, perovskites, etc.
  • Electronics
  • Photonics, optoelectronics, plasmonics
  • Quantum devices
  • Piezotronics, piezo-phototronics
  • Energy conversion and storage
  • Sensors

Dr. Emilio Nogales
Guest Editor

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Keywords

  • nanowire
  • semiconductor
  • growth
  • doping
  • electronics
  • photonics
  • optoelectronics
  • sensors
  • energy
  • devices

Published Papers (9 papers)

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Research

Jump to: Review

10 pages, 1745 KiB  
Article
Temperature-Dependent Anisotropic Refractive Index in β-Ga2O3: Application in Interferometric Thermometers
by Daniel Carrasco, Eva Nieto-Pinero, Manuel Alonso-Orts, Rosalía Serna, Jose M. San Juan, María L. Nó, Jani Jesenovec, John S. McCloy, Emilio Nogales and Bianchi Méndez
Nanomaterials 2023, 13(6), 1126; https://doi.org/10.3390/nano13061126 - 21 Mar 2023
Cited by 3 | Viewed by 1631
Abstract
An accurate knowledge of the optical properties of β-Ga2O3 is key to developing the full potential of this oxide for photonics applications. In particular, the dependence of these properties on temperature is still being studied. Optical micro- and nanocavities are [...] Read more.
An accurate knowledge of the optical properties of β-Ga2O3 is key to developing the full potential of this oxide for photonics applications. In particular, the dependence of these properties on temperature is still being studied. Optical micro- and nanocavities are promising for a wide range of applications. They can be created within microwires and nanowires via distributed Bragg reflectors (DBR), i.e., periodic patterns of the refractive index in dielectric materials, acting as tunable mirrors. In this work, the effect of temperature on the anisotropic refractive index of β-Ga2O3 n(λ,T) was analyzed with ellipsometry in a bulk crystal, and temperature-dependent dispersion relations were obtained, with them being fitted to Sellmeier formalism in the visible range. Micro-photoluminescence (μ-PL) spectroscopy of microcavities that developed within Cr-doped β-Ga2O3 nanowires shows the characteristic thermal shift of red–infrared Fabry–Perot optical resonances when excited with different laser powers. The origin of this shift is mainly related to the variation in the temperature of the refractive index. A comparison of these two experimental results was performed by finite-difference time-domain (FDTD) simulations, considering the exact morphology of the wires and the temperature-dependent, anisotropic refractive index. The shifts caused by temperature variations observed by μ-PL are similar, though slightly larger than those obtained with FDTD when implementing the n(λ,T) obtained with ellipsometry. The thermo-optic coefficient was calculated. Full article
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20 pages, 4288 KiB  
Article
Role of Working Temperature and Humidity in Acetone Detection by SnO2 Covered ZnO Nanowire Network Based Sensors
by Fanny Morisot, Claudio Zuliani, Mireille Mouis, Joaquim Luque, Cindy Montemont, Tony Maindron and Céline Ternon
Nanomaterials 2022, 12(6), 935; https://doi.org/10.3390/nano12060935 - 12 Mar 2022
Cited by 3 | Viewed by 1759
Abstract
A randomly oriented nanowire network, also called nanonet (NN), is a nano-microstructure that is easily integrated into devices while retaining the advantages of using nanowires. This combination presents a highly developed surface, which is promising for sensing applications while drastically reducing integration costs [...] Read more.
A randomly oriented nanowire network, also called nanonet (NN), is a nano-microstructure that is easily integrated into devices while retaining the advantages of using nanowires. This combination presents a highly developed surface, which is promising for sensing applications while drastically reducing integration costs compared to single nanowire integration. It now remains to demonstrate its effective sensing in real conditions, its selectivity and its real advantages. With this work, we studied the feasibility of gaseous acetone detection in breath by considering the effect of external parameters, such as humidity and temperature, on the device’s sensitivity. Here the devices were made of ZnO NNs covered by SnO2 and integrated on top of microhotplates for the fine and quick control of sensing temperature with low energy consumption. The prime result is that, after a maturation period of about 15 h, the devices are sensitive to acetone concentration as low as 2 ppm of acetone at 370 °C in an alternating dry and wet (50% of relative humidity) atmosphere, even after 90 h of experiments. While still away from breath humidity conditions, which is around 90% RH, the sensor response observed at 50% RH to 2 ppm of acetone shows promising results, especially since a temperature scan allows for ethanol’s distinguishment. Full article
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13 pages, 15313 KiB  
Article
Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence
by Ahmad Echresh, Himani Arora, Florian Fuchs, Zichao Li, René Hübner, Slawomir Prucnal, Jörg Schuster, Peter Zahn, Manfred Helm, Shengqiang Zhou, Artur Erbe, Lars Rebohle and Yordan M. Georgiev
Nanomaterials 2021, 11(11), 2917; https://doi.org/10.3390/nano11112917 - 30 Oct 2021
Cited by 6 | Viewed by 2248
Abstract
The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive [...] Read more.
The fabrication of individual nanowire-based devices and their comprehensive electrical characterization remains a major challenge. Here, we present a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching. The configuration allows two equivalent measurement sets to check the homogeneity of GeNWs in terms of resistivity and the Hall coefficient. The highest Hall mobility and carrier concentration of GeNWs at 5 K were in the order of 100 cm2/(Vs) and 4×1019cm3, respectively. With a decreasing nanowire width, the resistivity increases and the carrier concentration decreases, which is attributed to carrier scattering in the region near the surface. By comparing the measured data with simulations, one can conclude the existence of a depletion region, which decreases the effective cross-section of GeNWs. Moreover, the resistivity of thin GeNWs is strongly influenced by the cross-sectional shape. Full article
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14 pages, 3466 KiB  
Article
High-Quality Single-Crystalline β-Ga2O3 Nanowires: Synthesis to Nonvolatile Memory Applications
by Chandrasekar Sivakumar, Gang-Han Tsai, Pei-Fang Chung, Babu Balraj, Yen-Fu Lin and Mon-Shu Ho
Nanomaterials 2021, 11(8), 2013; https://doi.org/10.3390/nano11082013 - 06 Aug 2021
Cited by 12 | Viewed by 2989
Abstract
One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a nonvolatile [...] Read more.
One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a nonvolatile switching material over several decades and have reported many advantages and downsides. However, less attention has been given to low-dimensional materials for resistive memory compared to dielectric films. Particularly, β-Ga2O3 is one of the promising materials for high-power electronics and exhibits the resistive switching phenomenon. However, low-dimensional β-Ga2O3 nanowires have not been explored in resistive memory applications, which hinders further developments. In this article, we studied the resistance switching phenomenon using controlled electron flow in the 1D nanowires and proposed possible resistive switching and electron conduction mechanisms. High-density β-Ga2O3 1D-nanowires on Si (100) substrates were produced via the VLS growth technique using Au nanoparticles as a catalyst. Structural characteristics were analyzed via SEM, TEM, and XRD. Besides, EDS, CL, and XPS binding feature analyses confirmed the composition of individual elements, the possible intermediate absorption sites in the bandgap, and the bonding characteristics, along with the presence of various oxygen species, which is crucial for the ReRAM performances. The forming-free bipolar resistance switching of a single β-Ga2O3 nanowire ReRAM device and performance are discussed in detail. The switching mechanism based on the formation and annihilation of conductive filaments through the oxygen vacancies is proposed, and the possible electron conduction mechanisms in HRS and LRS states are discussed. Full article
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15 pages, 7753 KiB  
Article
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices
by Qingzhu Zhang, Jie Gu, Renren Xu, Lei Cao, Junjie Li, Zhenhua Wu, Guilei Wang, Jiaxin Yao, Zhaohao Zhang, Jinjuan Xiang, Xiaobin He, Zhenzhen Kong, Hong Yang, Jiajia Tian, Gaobo Xu, Shujuan Mao, Henry H. Radamson, Huaxiang Yin and Jun Luo
Nanomaterials 2021, 11(3), 646; https://doi.org/10.3390/nano11030646 - 05 Mar 2021
Cited by 29 | Viewed by 7567
Abstract
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release process of NS channels was firstly optimized to achieve uniform device structures. An over 100:1 selective wet-etch ratio of GeSi [...] Read more.
In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si nanosheet (NS) transistors on bulk Si substrate are systemically investigated. The release process of NS channels was firstly optimized to achieve uniform device structures. An over 100:1 selective wet-etch ratio of GeSi to Si layer was achieved for GeSi/Si stacks samples with different GeSi thickness (5 nm, 10 nm, and 20 nm) or annealing temperatures (≤900 °C). Furthermore, the influence of ground-plane (GP) doping in Si sub-fin region to improve electrical characteristics of devices was carefully investigated by experiment and simulations. The subthreshold characteristics of n-type devices were greatly improved with the increase of GP doping doses. However, the p-type devices initially were improved and then deteriorated with the increase of GP doping doses, and they demonstrated the best electrical characteristics with the GP doping concentrations of about 1 × 1018 cm−3, which was also confirmed by technical computer aided design (TCAD) simulation results. Finally, 4 stacked GAA Si NS channels with 6 nm in thickness and 30 nm in width were firstly fabricated on bulk substrate, and the performance of the stacked GAA Si NS devices achieved a larger ION/IOFF ratio (3.15 × 105) and smaller values of Subthreshold swings (SSs) (71.2 (N)/78.7 (P) mV/dec) and drain-induced barrier lowering (DIBLs) (9 (N)/22 (P) mV/V) by the optimization of suppression of parasitic channels and device’s structure. Full article
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11 pages, 2985 KiB  
Article
Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs
by Jie Gu, Qingzhu Zhang, Zhenhua Wu, Jiaxin Yao, Zhaohao Zhang, Xiaohui Zhu, Guilei Wang, Junjie Li, Yongkui Zhang, Yuwei Cai, Renren Xu, Gaobo Xu, Qiuxia Xu, Huaxiang Yin, Jun Luo, Wenwu Wang and Tianchun Ye
Nanomaterials 2021, 11(2), 309; https://doi.org/10.3390/nano11020309 - 26 Jan 2021
Cited by 12 | Viewed by 3103
Abstract
A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum [...] Read more.
A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias. Full article
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12 pages, 4053 KiB  
Article
Orientation-Dependent Conversion of VLS-Grown Lead Iodide Nanowires into Organic-Inorganic Hybrid Perovskites
by Hyewon Shim, Yunjeong Hwang, Sung Gu Kang and Naechul Shin
Nanomaterials 2021, 11(1), 223; https://doi.org/10.3390/nano11010223 - 16 Jan 2021
Cited by 1 | Viewed by 2139
Abstract
In this study, we demonstrate Sn-assisted vapor-liquid-solid (VLS) growth of lead iodide (PbI2) nanowires with van der Waals layered crystal structure and subsequent vapor-phase conversion into methylammonium lead iodide (CH3NH3PbI3) perovskites. Our systematic microscopic investigations [...] Read more.
In this study, we demonstrate Sn-assisted vapor-liquid-solid (VLS) growth of lead iodide (PbI2) nanowires with van der Waals layered crystal structure and subsequent vapor-phase conversion into methylammonium lead iodide (CH3NH3PbI3) perovskites. Our systematic microscopic investigations confirmed that the VLS-grown PbI2 nanowires display two major growth orientations of [0001] and [1¯21¯0], corresponding to the stacking configurations of PbI2 layers to the nanowire axis (transverse for [0001] vs. parallel for [1¯21¯0]). The resulting difference in the sidewall morphologies was correlated with the perovskite conversion, where [0001] nanowires showed strong localized conversion at top and bottom, as opposed to [1¯21¯0] nanowires with an evenly distributed degree of conversion. An ab initio energy calculation suggests that CH3NH3I preferentially diffuses and intercalates into (112¯0) sidewall facets parallel to the [1¯21¯0] nanowire axis. Our results underscore the ability to control the crystal structures of van der Waals type PbI2 in nanowire via the VLS technique, which is critical for the subsequent conversion process into perovskite nanostructures and corresponding properties. Full article
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11 pages, 3345 KiB  
Article
Absorption-Enhanced Ultra-Thin Solar Cells Based on Horizontally Aligned p–i–n Nanowire Arrays
by Xueguang Yuan, Xiaoyu Chen, Xin Yan, Wei Wei, Yangan Zhang and Xia Zhang
Nanomaterials 2020, 10(6), 1111; https://doi.org/10.3390/nano10061111 - 04 Jun 2020
Cited by 14 | Viewed by 2202
Abstract
A horizontally aligned GaAs p–i–n nanowire array solar cell is proposed and studied via coupled three-dimensional optoelectronic simulations. Benefiting from light-concentrating and light-trapping properties, the horizontal nanowire array yields a remarkable efficiency of 10.8% with a radius of 90 nm and a period [...] Read more.
A horizontally aligned GaAs p–i–n nanowire array solar cell is proposed and studied via coupled three-dimensional optoelectronic simulations. Benefiting from light-concentrating and light-trapping properties, the horizontal nanowire array yields a remarkable efficiency of 10.8% with a radius of 90 nm and a period of 5 radius, more than twice that of its thin-film counterpart with the same thickness. To further enhance the absorption, the nanowire array is placed on a low-refractive-index MgF2 substrate and capsulated in SiO2, which enables multiple reflection and reabsorption of light due to the refractive index difference between air/SiO2 and SiO2/MgF2. The absorption-enhancement structure increases the absorption over a broad wavelength range, resulting in a maximum conversion efficiency of 18%, 3.7 times higher than that of the thin-film counterpart, which is 3 times larger in GaAs material volume. This work may pave the way for the development of ultra-thin high-efficiency solar cells with very low material cost. Full article
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Review

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48 pages, 12415 KiB  
Review
Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives
by Yanqing Zhang, Weiming Xiong, Weijin Chen and Yue Zheng
Nanomaterials 2021, 11(2), 338; https://doi.org/10.3390/nano11020338 - 28 Jan 2021
Cited by 71 | Viewed by 8508
Abstract
Vanadium dioxide (VO2) is a typical metal-insulator transition (MIT) material, which changes from room-temperature monoclinic insulating phase to high-temperature rutile metallic phase. The phase transition of VO2 is accompanied by sudden changes in conductance and optical transmittance. Due to the [...] Read more.
Vanadium dioxide (VO2) is a typical metal-insulator transition (MIT) material, which changes from room-temperature monoclinic insulating phase to high-temperature rutile metallic phase. The phase transition of VO2 is accompanied by sudden changes in conductance and optical transmittance. Due to the excellent phase transition characteristics of VO2, it has been widely studied in the applications of electric and optical devices, smart windows, sensors, actuators, etc. In this review, we provide a summary about several phases of VO2 and their corresponding structural features, the typical fabrication methods of VO2 nanostructures (e.g., thin film and low-dimensional structures (LDSs)) and the properties and related applications of VO2. In addition, the challenges and opportunities for VO2 in future studies and applications are also discussed. Full article
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