Special Issue "Advances in Nanomaterials for Optoelectronics: Second Edition"

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 31 January 2024 | Viewed by 1530

Special Issue Editors

1. Institute for Advanced Energy Materials/School of Materials Science & Engineering, Shaanxi Normal University, Xi'an 710119, China
2. Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
Interests: perovskite; solar cells
Special Issues, Collections and Topics in MDPI journals
Department of Physics, College of Science, UAE University, Al Ain PO Box 15551, United Arab Emirates
Interests: nanomaterials; solar cells; photonic and optoelectronic devices
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

This Special Issue is a continuation of the previous successful Special Issue, entitled “Advances in Nanomaterials for Optoelectronics” (https://www.mdpi.com/journal/nanomaterials/special_issues/Nano_Advan_Optoele), hosted by the same editors.

This Special Issue will include interdisciplinary topics at the frontiers of nanomaterials and devices, covering a wide range of applications in optoelectronics, including solar cells, photodetectors, lasers, transistors, light-emitting diodes (LEDs), sensors, etc. Publications will be devoted to research on nanomaterials and nanocomposites (perovskites, 2D-layered materials, 3D-structured nanomaterials, etc.), device fabrications, advanced nanomaterials, optoelectronic properties, and the investigation (and modeling) of theoretical structure–property relationships. Other topics not mentioned in the list of specified topics are also welcome if they are related to the theme of the Special Issue.

The main goal of this research topic is to provide a specialized platform for researchers working in this field, where they can share new results, challenges, and perspectives of the new advances in nanomaterials and their optoelectronic applications and present a roadmap of this field.

Prof. Dr. Shengzhong Liu
Dr. Adel Najar
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanomaterial
  • perovskite
  • 2D
  • solar cell
  • photodetector
  • laser
  • transistor
  • LED
  • sensor

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Published Papers (3 papers)

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Research

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12 pages, 3298 KiB  
Article
Ag Nanocluster Production through DC Magnetron Sputtering and Inert Gas Condensation: A Study of Structural, Kelvin Probe Force Microscopy, and Optical Properties
Nanomaterials 2023, 13(20), 2758; https://doi.org/10.3390/nano13202758 - 13 Oct 2023
Viewed by 500
Abstract
Silver nanoclusters are valuable for a variety of applications. A combination of direct current (DC) magnetron sputtering and inert gas condensation methods, employed within an ultra-high vacuum (UHV) system, was used to generate Ag nanoclusters with an average size of 4 nm. Various [...] Read more.
Silver nanoclusters are valuable for a variety of applications. A combination of direct current (DC) magnetron sputtering and inert gas condensation methods, employed within an ultra-high vacuum (UHV) system, was used to generate Ag nanoclusters with an average size of 4 nm. Various analytical techniques, including Scanning Probe Microscopy (SPM), X-ray Diffraction (XRD), Kelvin Probe Force Microscopy (KPFM), UV-visible absorption, and Photoluminescence, were employed to characterize the produced Ag nanoclusters. AFM topographic imaging revealed spherical nanoparticles with sizes ranging from 3 to 6 nm, corroborating data from a quadrupole mass filter (QMF). The XRD analysis verified the simple cubic structure of the Ag nanoclusters. The surface potential was assessed using KPFM, from which the work function was calculated with a reference highly ordered pyrolytic graphite (HOPG). The UV-visible absorption spectra displayed peaks within the 350–750 nm wavelength range, with a strong absorption feature at 475 nm. Additionally, lower excitation wavelengths resulted in a sharp peak emission at 370 nm, which became weaker and broader when higher excitation wavelengths were used. Full article
(This article belongs to the Special Issue Advances in Nanomaterials for Optoelectronics: Second Edition)
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12 pages, 6356 KiB  
Article
Improving the Luminescence Performance of Monolayer MoS2 by Doping Multiple Metal Elements with CVT Method
Nanomaterials 2023, 13(18), 2520; https://doi.org/10.3390/nano13182520 - 08 Sep 2023
Cited by 1 | Viewed by 449
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) draw much attention as critical semiconductor materials for 2D, optoelectronic, and spin electronic devices. Although controlled doping of 2D semiconductors can also be used to tune their bandgap and type of carrier and further change their electronic, [...] Read more.
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) draw much attention as critical semiconductor materials for 2D, optoelectronic, and spin electronic devices. Although controlled doping of 2D semiconductors can also be used to tune their bandgap and type of carrier and further change their electronic, optical, and catalytic properties, this remains an ongoing challenge. Here, we successfully doped a series of metal elements (including Hf, Zr, Gd, and Dy) into the monolayer MoS2 through a single-step chemical vapor transport (CVT), and the atomic embedded structure is confirmed by scanning transmission electron microscope (STEM) with a probe corrector measurement. In addition, the host crystal is well preserved, and no random atomic aggregation is observed. More importantly, adjusting the band structure of MoS2 enhanced the fluorescence and the carrier effect. This work provides a growth method for doping non-like elements into 2D MoS2 and potentially many other 2D materials to modify their properties. Full article
(This article belongs to the Special Issue Advances in Nanomaterials for Optoelectronics: Second Edition)
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Review

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28 pages, 2454 KiB  
Review
The Scale Effects of Organometal Halide Perovskites
Nanomaterials 2023, 13(22), 2935; https://doi.org/10.3390/nano13222935 - 13 Nov 2023
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Abstract
Organometal halide perovskites have achieved great success in solution-processed photovoltaics. The explorations quickly expanded into other optoelectronic applications, including light-emitting diodes, lasers, and photodetectors. An in-depth analysis of the special scale effects is essential to understand the working mechanisms of devices and optimize [...] Read more.
Organometal halide perovskites have achieved great success in solution-processed photovoltaics. The explorations quickly expanded into other optoelectronic applications, including light-emitting diodes, lasers, and photodetectors. An in-depth analysis of the special scale effects is essential to understand the working mechanisms of devices and optimize the materials towards an enhanced performance. Generally speaking, organometal halide perovskites can be classified in two ways. By controlling the morphological dimensionality, 2D perovskite nanoplatelets, 1D perovskite nanowires, and 0D perovskite quantum dots have been studied. Using appropriate organic and inorganic components, low-dimensional organic–inorganic metal halide hybrids with 2D, quasi-2D, 1D, and 0D structures at the molecular level have been developed and studied. This provides opportunities to investigate the scale-dependent properties. Here, we present the progress on the characteristics of scale effects in organometal halide perovskites in these two classifications, with a focus on carrier diffusion, excitonic features, and defect properties. Full article
(This article belongs to the Special Issue Advances in Nanomaterials for Optoelectronics: Second Edition)
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