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Special Issue "Semiconductor Nanomaterials for Optoelectronic Applications"

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Prof. Dr. Ikai Lo
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Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
Interests: semiconductor physics; molecular beam epitaxy; compound semiconductors; condensed matter physics; nanotechnology

Special Issue Information

Dear Colleagues,

In the past decades, nanotechnology has been applied to reduce the size or dimension of optoelectronic devices in which the quantum confinement of electron and hole carriers will practically optimize energy consumption. In this new trend of sustainable optoelectronic applications, high-quality semiconductor nanomaterials are convincing candidates for the fabrication of nanometer-sized optoelectronic devices. There are two methods of nanomaterial fabrication for nanodevices: the top-down and the bottom-up approach. The top-down lithographed approach (e.g., by EUV, FIB, e-beam writer) is the favorite for the manufacturing process, but the bottom-up self-assembling approach (e.g., MOCVD, MBE) is more advantageous when it comes to sample growth of defect-free and homogenous chemical composition. Both approaches benefit from the quantum effect of nanodevices derived from these semiconductor nanomaterials.

Therefore, we cordially invite professors and researchers to submit original manuscripts or reviewed articles to this Special Issue, including but not limited to the topics of methodology, fabrication, characterization, and properties for optoelectronic nanodevice applications.

Prof. Dr. Ikai Lo
Guest Editor

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Keywords

nanomaterials
nanotechnology
EUV
FIB
e-beam writer
MOCVD
MBE

Published Papers (3 papers)

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Research

11 pages, 2385 KiB

Open AccessArticle

Optimization of Ternary In_xGa_1-xN Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs

and

Nanomaterials 2023, 13(13), 1922; https://doi.org/10.3390/nano13131922 - 23 Jun 2023

Viewed by 807

Abstract

Red, green, and blue light In_xGa_1−xN multiple quantum wells have been grown on GaN/γ-LiAlO₂ microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for In_xGa_1-xN multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (In_xGa_1-xN) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful In_xGa_1-xN-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications. Full article

(This article belongs to the Special Issue Semiconductor Nanomaterials for Optoelectronic Applications)

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15 pages, 5424 KiB

Open AccessArticle

Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis

and

Chih-Chung (C. C.) Yang

Nanomaterials 2023, 13(10), 1617; https://doi.org/10.3390/nano13101617 - 11 May 2023

Viewed by 1005

Abstract

The high porosity of a GaN porous structure (PS) makes it mechanically semi-flexible and can shield against the stress from the thick growth template on an overgrown layer to control the lattice structure or composition within the overgrown layer. To understand this stress shield effect, we investigated the lattice constant variations among different growth layers in various samples of overgrown Al_0.3Ga_0.7N on GaN templates under different strain-relaxation conditions based on d-spacing crystal lattice analysis. The fabrication of a strain-damping PS in a GaN template shields against the stress from the thick GaN template on the GaN interlayer, which lies between the PS and the overgrown AlGaN layer, such that the stress counteraction of the AlGaN layer against the GaN interlayer can reduce the tensile strain in AlGaN and increase its critical thickness. If the GaN interlayer is thin, such that a strong AlGaN counteraction occurs, the increased critical thickness can become larger than the overgrown AlGaN thickness. In this situation, crack-free, thick AlGaN overgrowth is feasible. Full article

(This article belongs to the Special Issue Semiconductor Nanomaterials for Optoelectronic Applications)

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12 pages, 4626 KiB

Open AccessArticle

Efficient Charge Transfer in MAPbI₃ QDs/TiO₂ Heterojunctions for High-Performance Solar Cells

and

Nanomaterials 2023, 13(7), 1292; https://doi.org/10.3390/nano13071292 - 06 Apr 2023

Viewed by 1381

Abstract

Methylammonium lead iodide (MAPbI₃) perovskite quantum dots (QDs) have become one of the most promising materials for optoelectronics. Understanding the dynamics of the charge transfer from MAPbI₃ QDs to the charge transport layer (CTL) is critical for improving the performance of MAPbI₃ QD photoelectronic devices. However, there is currently less consensus on this. In this study, we used an ultrafast transient absorption (TA) technique to investigate the dynamics of charge transfer from MAPbI₃ QDs to CTL titanium dioxide (TiO₂), elucidating the dependence of these kinetics on QD size with an injection rate from 1.6 × 10¹⁰ to 4.3 × 10¹⁰ s⁻¹. A QD solar cell based on MAPbI₃/TiO₂ junctions with a high-power conversion efficiency (PCE) of 11.03% was fabricated, indicating its great potential for application in high-performance solar cells. Full article

(This article belongs to the Special Issue Semiconductor Nanomaterials for Optoelectronic Applications)

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