Optoelectronic Devices and Applications Based on Emerging Materials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: closed (31 October 2023) | Viewed by 4396

Special Issue Editor


E-Mail Website
Guest Editor
The SDC Research Lab, Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
Interests: 2D materials; nanodevices; nanomaterials; mixed-dimensional transistors; device physics; neuromorphic devices; integrated circuit; sensors; optoelectronic devices; organic semiconductors; memristors; floating-gate memories; charge traps; charge transports; carbon nanotubes; nanoscale devices; lithography; spectroscopies
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Optoelectronics devices utilize, detect, and control light, including visible and invisible forms such as X-rays, ultraviolet, and infrared, and are operated by energy/signal conversion in electrical-to-optical or optical-to-electrical ways.

This Special Issue calls for research papers, reviews, and short communications related to state-of-the-art developments in optoelectronic devices based on emerging materials including transition-metal dichalcogenides, perovskites, MXenes, polymers, and organic–inorganic hybrid materials.

Dr. Hocheon Yoo
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photodetectors
  • phototransistors
  • optical memory
  • X-ray sensors
  • broadband sensors
  • flexible photodetectors
  • solar-blinded UV sensors
  • light-emitting transistors
  • solution process
  • organic-semiconductor-based photosensors
  • photovoltaics in organic semiconductors

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Review

21 pages, 5818 KiB  
Review
Photogating Effect-Driven Photodetectors and Their Emerging Applications
by Jihyun Shin and Hocheon Yoo
Nanomaterials 2023, 13(5), 882; https://doi.org/10.3390/nano13050882 - 26 Feb 2023
Cited by 9 | Viewed by 4058
Abstract
Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges [...] Read more.
Rather than generating a photocurrent through photo-excited carriers by the photoelectric effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect is caused by trapped photo-induced charges that modulate the potential energy of the semiconductor/dielectric interface, where these trapped charges contribute an additional electrical gating-field, resulting in a shift in the threshold voltage. This approach clearly separates the drain current in dark versus bright exposures. In this review, we discuss the photogating effect-driven photodetectors with respect to emerging optoelectrical materials, device structures, and mechanisms. Representative examples that reported the photogating effect-based sub-bandgap photodetection are revisited. Furthermore, emerging applications using these photogating effects are highlighted. The potential and challenging aspects of next-generation photodetector devices are presented with an emphasis on the photogating effect. Full article
(This article belongs to the Special Issue Optoelectronic Devices and Applications Based on Emerging Materials)
Show Figures

Figure 1

Back to TopTop