Special Issue "Recent Advances in Semiconductor Nanomaterials and Their Applications in Electronics and Optoelectronics"

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (30 November 2023) | Viewed by 1058

Special Issue Editor

Innovative nanoTechnology Laboratory, Department of Electrical Engineering, Sejong University, Seoul, Republic of Korea
Interests: semiconductor memory; semiconductor sensor; LED device; electronic materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Recently, due to the physical limitations of semiconductor devices such as diode, resistor, electrode, and memory, research using various nanomaterials and nanoscale semiconductor devices is being actively conducted. Semiconductor nanomaterials and nanomaterials are receiving great attention in scientific research because they have special physical and chemical properties compared to bulk nanomaterials. Semiconductor nanomaterials can potentially be used in the design of electronic devices, optical devices, semiconductor-based sensors, and transparent electrodes. Nanoscale semiconductor devices are particularly interesting in terms of charge transfer and can be manipulated by temperature, electric field, and current. In addition, at present, the study of semiconductor nanomaterials spans various multidisciplinary fields in both fundamental research on material and device physics, and emerging applications such as FET, flexible devices, and optoelectronic devices. Further development of semiconductor nanomaterials will certainly lead to significant breakthroughs in the semiconductor industry.

At this point, this Special Issue, titled "Recent Advances in Semiconductor Nanomaterials and Their Applications", is open to an original research article addressing recent theoretical and/or experimental findings on the electronic/optical properties of semiconductor nanomaterials. We hope that this Special Issue will provide a collection of research papers covering original and important advanced research related to fundamental physics, novel concepts, and potential applications of semiconductor nanomaterials in the fields of electronics and optoelectronics.

Prof. Dr. Hee-Dong Kim
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • semiconductor
  • nanomaterial
  • optoelectronic devices
  • sensor devices
  • system with sensor fusion

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:


12 pages, 4158 KiB  
Influence of WO3-Based Antireflection Coatings on Current Density in Silicon Heterojunction Solar Cells
Nanomaterials 2023, 13(9), 1550; https://doi.org/10.3390/nano13091550 - 05 May 2023
Viewed by 915
Antireflection coatings (ARCs) with an indium thin oxide (ITO) layer on silicon heterojunction solar cells (SHJ) have garnered significant attention, which is due to their potential for increasing current density (Jsc) and enhancing reliability. We propose an additional tungsten trioxide (WO [...] Read more.
Antireflection coatings (ARCs) with an indium thin oxide (ITO) layer on silicon heterojunction solar cells (SHJ) have garnered significant attention, which is due to their potential for increasing current density (Jsc) and enhancing reliability. We propose an additional tungsten trioxide (WO3) layer on the ITO/Si structure in this paper in order to raise the Jsc and demonstrate the influence on the SHJ solar cell. First, we simulate the Jsc characteristics for the proposed WO3/ITO/Si structure in order to analyze Jsc depending on the thickness of WO3 using an OPAL 2 simulator. As a result, the OPAL 2 simulation shows an increase in Jsc of 0.65 mA/cm2 after the 19 nm WO3 deposition on ITO with a doping concentration of 6.1 × 1020/cm2. We then fabricate the proposed samples and observe an improved efficiency of 0.5% with an increased Jsc of 0.75 mA/cm2 when using a 20 nm thick WO3 layer on the SHJ solar cell. The results indicate that the WO3 layer can be a candidate to improve the efficiency of SHJ solar cells with a low fabrication cost. Full article
Show Figures

Figure 1

Back to TopTop