Special Issue "Metal Halide Perovskites-Based Optoelectronics: From Lab to Fab"

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 24 April 2024 | Viewed by 405

Special Issue Editors

Dr. Fang Yuan
E-Mail Website
Guest Editor
School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, China
Interests: electroluminescent devices based on perovskite semiconductors; novel lead-free semiconductor luminescent materials
Dr. Hua Dong
E-Mail Website
Guest Editor
School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi'an, China
Interests: novel perovskite solar cells/indoor photovoltaic technology; self-actuated/non-self-actuated photodetectors

Special Issue Information

Dear Colleagues,

Metal halide perovskites have emerged as state-of-the-art semiconductors, especially for optoelectronics. The most attractive advantages lie in their high absorption coefficients, long charge-carrier diffusion length, tunable bandgap, and low-cost processability. Benefiting from these merits, the record efficiency of the optoelectronics, including solar cells and light-emitting diodes, has been comparable to that of the standard commercialized devices. Unfortunately, there are a plethora of issues born from the intrinsic ionic structures, which serve as bottlenecks to accessing future applications. Hence, in order to push the highly promising metal halide perovskites from lab to fab, a rational roadmap varying from simulations to crystal structures and ending with device physics should be designed step by step.

Herein, the problems that we would like to address in this Special Issue are as follows:

  1. Stability issues and order degree of crystal structures from simulations: to enhance the intrinsic stability of perovskites and narrow the gap between simulations and experiments;
  2. Efficient photogenerated charge-carrier transport of perovskite materials: to reduce the energy loss and enhance the device efficiency in principle;
  3. Orientated crystal growth dynamics of perovskite materials: to remove the excess barriers from unpreferred crystal planes and allow more efficient charge-carrier transport;
  4. Techniques and applications of single crystals vs. nanocrystals vs. polycrystalline films: to facilitate different perovskite status to meet the diverse needs of optoelectronics;
  5. Architecture design of optoelectronic devices: to reduce the interfacial and foreign loss to further enhance device efficiency;
  6. Long-term stability of optoelectronic devices: to improve the device operations from stabilized perovskite materials, reinforced interfaces, and encapsulations.

Dr. Fang Yuan
Dr. Hua Dong
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.


  • metal halide perovskites
  • solar cells
  • light-emitting diodes
  • photodetectors
  • lasers
  • simulations
  • nanocrystals
  • device physics
  • stability

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:


12 pages, 5341 KiB  
Stepwise−Process−Controlled Ligand Management Strategy for Efficient and Stable Perovskite Quantum Dot Solar Cells
Nanomaterials 2023, 13(23), 3032; https://doi.org/10.3390/nano13233032 - 27 Nov 2023
Viewed by 332
CsPbI3 perovskite quantum dots (QDs) have attracted much attention in the field of solar cells because of their excellent photovoltaic properties. Conventional modification of long−chain insulating ligands can ensure good dispersion and film−forming stability of QDs, but the limitations of their low [...] Read more.
CsPbI3 perovskite quantum dots (QDs) have attracted much attention in the field of solar cells because of their excellent photovoltaic properties. Conventional modification of long−chain insulating ligands can ensure good dispersion and film−forming stability of QDs, but the limitations of their low defect passivation ability and poor charge transport ability will make them fail to achieve high efficiency in the corresponding solar cell devices. In this study, by introducing “Benzylphosphonic acid” short−chain ligands to the surface of CsPbI3 QDs, the ligands were re−administered on the surface during the preparation of the CsPbI3 QDs as well as during the film−forming process. The strong coordination ability of Benzenephosphonic acid can effectively passivate defects on the surface of CsPbI3 QDs and inhibit non−radiative recombination and phase transition. Meanwhile, this short−chain ligand can effectively promote the charge exchange between adjacent QDs and improve the electrical transport properties of the film. The efficiency of the Benzylphosphonic acid−modified CsPbI3 QDs solar cell reaches 13.91% compared to the unmodified device (PCE of 11.4%). The storage stability and operation stability of the device are also significantly improved. (The efficiency remains at 91% of the original for 800 h of atmospheric storage; the efficiency remains at 92% of the original for 200 h of continuous light exposure.) The present strategy realizes the simultaneous improvement of photovoltaic properties and stability of CsPbI3 QD solar cells and also provides a reference for surface ligand engineering to realize highly efficient and stable perovskite quantum dot solar cells. Full article
(This article belongs to the Special Issue Metal Halide Perovskites-Based Optoelectronics: From Lab to Fab)
Show Figures

Graphical abstract

Back to TopTop