Special Issue "Nanodevices—Technologies and Applications in Semiconductor Industry"
Deadline for manuscript submissions: closed (31 October 2023) | Viewed by 520
Interests: physics and technology of semiconductor device
Interests: semiconductor processes, devices, characterization, and applications
Semiconductor technology is bounded with several material options, i.e., from metal (M), oxide (O), to semiconductor characteristics (S). One and foremost prioritized option among them is the field effect transistors (FET), so-called the MOSFET. With this attention, several material options have been of great interest to the semiconductor industry and are under intensive investigation. This can be achieved by supporting these material options and allowed with the new processing techniques to develop most efficient choices in device technologies.
The Special Issue of Nanomaterials is focused on emerging semiconductor device technology initiating from FETs, high-electron mobility transistors (HEMTs), tunneling FETs (TFETs), and so on through novel structural and material options through modeling as well as fabrication. It is worth pointing that the material choices in device technologies have been advanced with the latest research findings by tsmc, Taiwan (Semiconductor industry) and MIT, USA (highly reputed university), i.e., 2D FETs for 1nm technology node (IEDM, 2022). Having said that, the several novel implementations on device options is always beneficial and needed for the emerging technology nodes in semiconductor industry. Here, 3D stacked multi-bridge vertical channel complementary FET, so-called the CFET with gate-all-around has also been invented to continue Moore’s law. In addition, the processing technological equipment’s are also important to implement such futuristic designs with less processing defects. To do this, a method of manufacturing semiconductor devices and advanced processing equipment’s are needed. Therefore, this Special Issue focuses on,
- CMOS platform device technologies (FETs & CFETs, HEMTs, TFETs, etc.);
- Process module innovations and progresses in device technology;
- Material engineering and implementations in device technology;
- Device to circuit interactions and applications.
Prof. Dr. Yiming Li
Prof. Dr. Yao-Jen Lee
Prof. Dr. Seiji Samukawa
Manuscript Submission Information
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Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- semiconductor devices
- semiconductor materials
- process techniques
- heterogenous integration
- hybrid process
- nanoelectronic devices