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Micromachines
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Design Trends in RF/Microwave Filtering and Memristive Devices
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Design Trends in RF/Microwave Filtering and Memristive Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E：Engineering and Technology".

Deadline for manuscript submissions: closed (31 May 2023) | Viewed by 18547

Special Issue Editors

Prof. Dr. Milka Potrebic

E-Mail Website
Guest Editor
School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade, Serbia
Interests: microwave circuits; microwave filters; frequency-selective surfaces; memristive systems; circuit theory
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Dejan Tošić

E-Mail Website
Guest Editor
School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade, Serbia
Interests: RF/microwave filters; microwave circuits; memristive systems; symbolic analysis of circuits and systems; electric circuit theory
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Nowadays, a smart system living concept is based on intelligent technologies and cloud  radio access networks, which affect the development of novel mobile networks, such as 5G and beyond, designed from ultra-high frequencies to millimeter waves. The novel communication networks promises advantages such as faster speed, lower latency, and wider coverage. These features enable realization of IoT/IoE, virtual reality applications, multi-SIM devices, factory automation, and autonomous vehicles. Further, 5G/6G new radio supports from non-terrestrial access technologies, such as satellites, are being developed.

Next generation radio applications require wider channel bandwidths, higher operating frequencies, multi-antenna access, etc. The 5G RF front-ends have complex designs, featuring a small footprint, low power consumption, affordable price, and advanced filter specifications. The 5G microwave circuits, such as dielectric resonators can be traditionally fabricated of superconducting and ceramic materials, while filter implementations are based on dielectric materials, such as liquid crystal and ceramic materials. The 5G networks could benefit from 3D printing in the manufacturing of microwave components, such as filters.

In order to optimize the energy consumption in the front-end module, nonvolatile components could be used as RF memristive switches. Memristors are potential candidates to enable reconfigurability and tunability of RF/microwave devices, such as filters. In comparison with traditional microwave switches, memristors are expected to be used as highly adaptable nanoscale switches.

Memristive switches could be good device candidates for microwave and millimeter-wave frequencies, because memristors are non-volatile components with nanosecond switching speed, a possibility of hot switching, high power handling, high figure-of-merit cut-off frequency (above 100 THz), and heater-less ambient integration.

Recent research efforts, inspired by memristor technology, have been presented as non-volatile RF and millimeter-wave switches based on MoS2 atomristors and monolayer hBN.

In order to inspire a discussion and offer an overview of technology trends, we invite researchers from both industry and academia to contribute to this Special Issue with their ongoing research and visions of the future design of RF/microwave filters and memristive devices, circuits, and systems. The contributions should consider but are not limited to the following topics:

  • RF/microwave filters;
  • Multi-mode resonators;
  • Multi-band filters;
  • Planar filter;
  • Waveguide filters;
  • Substrate integrated waveguides filters;
  • Dielectric resonator filter;
  • Tunable/reconfigurable filters and multiplexers;
  • Multifunctional filtering power dividers/baluns/couplers/antennas;
  • Optimization techniques for filter design;
  • 3D printing of microwave and millimeter-wave filtering devices;
  • Wireless sensors;
  • Memristor modeling and applications;
  • Memristive devices;
  • Memristive tunable/reconfigurable microwave and millimeter waves circuits;
  • Memristve CMOS circuits;
  • Memristive sensors.

Prof. Dr. Milka Potrebic
Prof. Dr. Dejan Tošić
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • RF/microwave filters
  • tunable/reconfigurable filters
  • multifunctional filtering devices
  • 3D printing
  • RF memristor
  • memristive devices
  • sensors

Published Papers (10 papers)

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Research

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13 pages, 3789 KiB  
Article
The Dynamic Tunability of Memristor-Based Active Filters
by Ivo Marković, Milka Potrebić Ivaniš and Dejan Tošić
Micromachines 2023, 14(11), 2064; https://doi.org/10.3390/mi14112064 - 05 Nov 2023
Cited by 1 | Viewed by 1108
Abstract
When the memristor was fabricated for the first time, it launched an entirely new field of research. Many of the published papers regarding memristors are primarily theoretical and are based on computer simulations. Some recent papers analyze the memristor’s programming circuits, but to [...] Read more.
When the memristor was fabricated for the first time, it launched an entirely new field of research. Many of the published papers regarding memristors are primarily theoretical and are based on computer simulations. Some recent papers analyze the memristor’s programming circuits, but to the best of the authors’ knowledge, no memristor has been embedded into a commercial analog circuit. This paper is practically oriented and it is based on the experimental results obtained by measurements on the circuit prototype. We present a solution for automated programming of a commercially available memristor and its implementation in tunable active bandpass filter design. The novelty of this paper is that the active bandpass filter’s central frequency could be programmed during the filter operation, so a pause for memristor state-switching is not required. The experimental results are promising, and open up possibilities for the memristor’s application in analog systems. Full article
(This article belongs to the Special Issue Design Trends in RF/Microwave Filtering and Memristive Devices)
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13 pages, 4463 KiB  
Article
The Coupled Reactance-Less Memristor Based Relaxation Oscillators for Binary Oscillator Networks
by Vladimir Rakitin, Sergey Rusakov and Sergey Ulyanov
Micromachines 2023, 14(2), 365; https://doi.org/10.3390/mi14020365 - 31 Jan 2023
Cited by 1 | Viewed by 1039
Abstract
This paper discusses the application of coupled reactance-less memristor-based oscillators (MBO) with binary output signals in oscillatory networks. A class of binary-coupled memristor oscillators provides simple integration with standard CMOS logic elements. Combining MBOs with binary logic elements ensures the operation of complex [...] Read more.
This paper discusses the application of coupled reactance-less memristor-based oscillators (MBO) with binary output signals in oscillatory networks. A class of binary-coupled memristor oscillators provides simple integration with standard CMOS logic elements. Combining MBOs with binary logic elements ensures the operation of complex information processing algorithms. The analysis of the simplest networks based on MBOs is performed. The typical reactance-less MBO with current and potential inputs is considered. The output responses for input control signals are analyzed. It is shown that the current input signal impacts primarily the rate of memristor resistance variation, while the potential input signal changes the thresholds. The exploit of the potential input for the synchronization of coupled MBOs and current control input in order to provide the necessary encoding of information is suggested. The example of the application of coupled MBOs in oscillatory networks is given, and results of simulation are presented. Full article
(This article belongs to the Special Issue Design Trends in RF/Microwave Filtering and Memristive Devices)
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12 pages, 3095 KiB  
Article
A VO2 Neuristor Based on Microstrip Line Coupling
by Haidan Lin and Yiran Shen
Micromachines 2023, 14(2), 337; https://doi.org/10.3390/mi14020337 - 28 Jan 2023
Cited by 2 | Viewed by 1297
Abstract
The neuromorphic network based on artificial neurons and synapses can solve computational difficulties, and its energy efficiency is incomparable to the traditional von Neumann architecture. As a new type of circuit component, nonvolatile memristors are very similar to biological synapses in structure and [...] Read more.
The neuromorphic network based on artificial neurons and synapses can solve computational difficulties, and its energy efficiency is incomparable to the traditional von Neumann architecture. As a new type of circuit component, nonvolatile memristors are very similar to biological synapses in structure and function. Only one memristor can simulate the function of a synapse. Therefore, memristors provide a new way to build hardware-based artificial neural networks. To build such an artificial neural network, in addition to the artificial synapses, artificial neurons are also needed to realize the distribution of information and the adjustment of synaptic weights. As the VO2 volatile local active memristor is complementary to nonvolatile memristors, it can be used to simulate the function of neurons. However, determining how to better realize the function of neurons with simple circuits is one of the current key problems to be solved in this field. This paper considers the influence of distribution parameters on circuit performance under the action of high-frequency and high-speed signals. Two Mott VO2 memristor units are connected and coupled with microstrip lines to simulate the Hodgkin–Huxley neuron model. It is found that the proposed memristor neuron based on microstrip lines shows the characteristics of neuron action potential: amplification and threshold. Full article
(This article belongs to the Special Issue Design Trends in RF/Microwave Filtering and Memristive Devices)
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10 pages, 2899 KiB  
Article
Application of Compact Folded-Arms Square Open-Loop Resonator to Bandpass Filter Design
by Augustine O. Nwajana and Emenike Raymond Obi
Micromachines 2023, 14(2), 320; https://doi.org/10.3390/mi14020320 - 26 Jan 2023
Cited by 4 | Viewed by 2571
Abstract
Folded-arms square open-loop resonator (FASOLR) is a variant of the conventional microstrip square open-loop resonator (SOLR) that facilitates further device size miniaturization by having the two arms of the conventional SOLR folded inwards. This paper highlights the benefits of this brand of compact [...] Read more.
Folded-arms square open-loop resonator (FASOLR) is a variant of the conventional microstrip square open-loop resonator (SOLR) that facilitates further device size miniaturization by having the two arms of the conventional SOLR folded inwards. This paper highlights the benefits of this brand of compact SOLR by implementing a five-pole Chebyshev bandpass filter (BPF) using compact FASOLR. The test BPF is presented, with centre frequency of 2.2 GHz, fractional bandwidth of 10%, passband ripple of 0.04321 dB, and return loss of 20 dB. The design is implemented on a Rogers RT/Duroid 6010LM substrate with a dielectric constant of 10.7 and thickness of 1.27 mm. The filter device is manufactured and characterised, with the experimentation results being used to justify the simulation results. The presented measurement and electromagnetic (EM) simulation results demonstrate a good match. The EM simulation responses achieve a minimum insertion loss of 0.8 dB and a very good channel return loss of 22.6 dB. The measurement results, on the other hand, show a minimum insertion loss of 0.9 dB and a return loss of better than 19.2 dB. The filter component has a footprint of 36.08 mm by 6.74 mm (that is, 0.26 λg × 0.05 λg), with λg indicating the guided wavelength for the 50 Ohm microstrip line impedance at the centre frequency of the proposed fifth-order bandpass filter. Full article
(This article belongs to the Special Issue Design Trends in RF/Microwave Filtering and Memristive Devices)
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17 pages, 5825 KiB  
Article
Hybrid Silicon Substrate FinFET-Metal Insulator Metal (MIM) Memristor Based Sense Amplifier Design for the Non-Volatile SRAM Cell
by G. Lakshmi Priya, Namita Rawat, Abhishek Sanagavarapu, M. Venkatesh and A. Andrew Roobert
Micromachines 2023, 14(2), 232; https://doi.org/10.3390/mi14020232 - 17 Jan 2023
Cited by 3 | Viewed by 1875
Abstract
Maintaining power consumption has become a critical hurdle in the manufacturing process as CMOS technologies continue to be downscaled. The longevity of portable gadgets is reduced as power usage increases. As a result, less-cost, high-density, less-power, and better-performance memory devices are in great [...] Read more.
Maintaining power consumption has become a critical hurdle in the manufacturing process as CMOS technologies continue to be downscaled. The longevity of portable gadgets is reduced as power usage increases. As a result, less-cost, high-density, less-power, and better-performance memory devices are in great demand in the electronics industry for a wide range of applications, including Internet of Things (IoT) and electronic devices like laptops and smartphones. All of the specifications for designing a non-volatile memory will benefit from the use of memristors. In addition to being non-volatile, memristive devices are also characterized by the high switching frequency, low wattage requirement, and compact size. Traditional transistors can be replaced by silicon substrate-based FinFETs, which are substantially more efficient in terms of area and power, to improve the design. As a result, the design of non-volatile SRAM cell in conjunction with silicon substrate-based FinFET and Metal Insulator Metal (MIM) based Memristor is proposed and compared to traditional SRAMs. The power consumption of the proposed hybrid design has outperformed the standard Silicon substrate FinFET design by 91.8% better. It has also been reported that the delay for the suggested design is actually quite a bit shorter, coming in at approximately 1.989 ps. The proposed architecture has been made significantly more practical for use as a low-power and high-speed memory system because of the incorporation of high-K insulation at the interface of metal regions. In addition, Monte Carlo (MC) simulations have been run for the reported 6T-SRAM designs in order to have a better understanding of the device stability. Full article
(This article belongs to the Special Issue Design Trends in RF/Microwave Filtering and Memristive Devices)
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10 pages, 4557 KiB  
Article
Design and Optimization of an S-Band MEMS Bandpass Filter Based on Aggressive Space Mapping
by Qiannan Wu, Xudong Gao, Zemin Shi, Jing Li and Mengwei Li
Micromachines 2023, 14(1), 67; https://doi.org/10.3390/mi14010067 - 27 Dec 2022
Cited by 1 | Viewed by 1259
Abstract
Aggressive space mapping (ASM) is a common filter simulation and debugging method. It plays an important role in the field of microwave device design. This paper introduces ASM and presents the design and fabrication of a compact fifth-order microstrip interdigital filter with a [...] Read more.
Aggressive space mapping (ASM) is a common filter simulation and debugging method. It plays an important role in the field of microwave device design. This paper introduces ASM and presents the design and fabrication of a compact fifth-order microstrip interdigital filter with a center frequency of 2.5 GHz and a relative bandwidth of 10% using ASM. The filter used a double-layer silicon substrate structure and stepped impedance resonators (SIRs) and was optimized by ASM. After five iterations, the filter achieved the design specification, which greatly improves the efficiency of the filter design compared with the traditional method. It was fabricated on high-resistance silicon wafers by micro-electro-mechanical systems (MEMSs) technology, and the final size of the chip is 9.5 mm × 7.6 mm × 0.8 mm. The measurement results show that the characteristics of the filter are similar to the simulation results, which also shows the efficiency and precision of the ASM algorithm. Full article
(This article belongs to the Special Issue Design Trends in RF/Microwave Filtering and Memristive Devices)
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11 pages, 4150 KiB  
Article
A Dual-Band, Dual-Polarized Filtering Antenna Based on Cross-Shaped Dielectric Strip Resonator
by Lixin Jin, Hui Tang, Jin Shi, Longlong Lin and Kai Xu
Micromachines 2022, 13(12), 2069; https://doi.org/10.3390/mi13122069 - 25 Nov 2022
Cited by 1 | Viewed by 1401
Abstract
A dual-band, dual-polarized filtering antenna with a cross-shaped dielectric strip resonator is proposed. The dual-band filtering radiation function is achieved by utilizing the odd and even modes of the stub loaded microstrip resonator to excite the TMδ1 and TMδ3 mode in [...] Read more.
A dual-band, dual-polarized filtering antenna with a cross-shaped dielectric strip resonator is proposed. The dual-band filtering radiation function is achieved by utilizing the odd and even modes of the stub loaded microstrip resonator to excite the TMδ1 and TMδ3 mode in each polarization direction of the cross-shaped dielectric strip resonator. The cross-shaped dielectric strip resonator is synthesized by the E-field distributions and the magnitude comparison along different polarization directions, which can ensure the isolation between two polarizations. Compared with dual-band filtering dielectric antennas, the proposed antenna has the characteristic of dual-polarized radiation, as well as a low profile. A prototype is fabricated and measured, which operates at 3.5 GHz and 4.9 GHz with the fractional bandwidths (FBW) of 5.40% and 2.03%, respectively, and the gains of these two bands are 6.4 dBi and 6.2 dBi, respectively. The two radiation nulls are located at 4.4 GHz and 5.1 GHz. Furthermore, the measured isolation between the two ports in the frequency band can achieve 16 dB. Full article
(This article belongs to the Special Issue Design Trends in RF/Microwave Filtering and Memristive Devices)
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11 pages, 1877 KiB  
Article
A ReRAM-Based Non-Volatile and Radiation-Hardened Latch Design
by Aibin Yan, Shaojie Wei, Yu Chen, Zhengzheng Fan, Zhengfeng Huang, Jie Cui, Patrick Girard and Xiaoqing Wen
Micromachines 2022, 13(11), 1802; https://doi.org/10.3390/mi13111802 - 22 Oct 2022
Cited by 1 | Viewed by 1273
Abstract
In aerospace environments, high reliability and low power consumption of chips are essential. To greatly reduce power consumption, the latches of a chip need to enter the power down operation. In this operation, employing non-volatile (NV) latches can retain circuit states. Moreover, a [...] Read more.
In aerospace environments, high reliability and low power consumption of chips are essential. To greatly reduce power consumption, the latches of a chip need to enter the power down operation. In this operation, employing non-volatile (NV) latches can retain circuit states. Moreover, a latch can be hit by a radiative particle in the aerospace environment, which can cause a severe soft error in the worst case. This paper presents a NV-latch based on resistive random-access memories (ReRAMs) for NV and robust applications. The proposed NV-latch is radiation-hardened with low overhead and can restore values after power down operation. Simulation results demonstrate that the proposed NV-latch can completely provide radiation hardening capability against single-event upsets (SEUs) and can restore values after power down operation. The proposed NV-latch can reduce the number of transistors in the storage cells by 50% on average compared with the other similar solutions. Full article
(This article belongs to the Special Issue Design Trends in RF/Microwave Filtering and Memristive Devices)
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12 pages, 3857 KiB  
Article
BPSK Circuit Based on SDC Memristor
by Ran Gao and Yiran Shen
Micromachines 2022, 13(8), 1306; https://doi.org/10.3390/mi13081306 - 12 Aug 2022
Cited by 2 | Viewed by 1679
Abstract
Digital communication based on memristors is a new field. The main principle is to construct a modulation and demodulation circuit by using the resistance variation characteristics of the memristor. Based on the establishment of the Knowm memristor simulation model, firstly, the modulation circuit [...] Read more.
Digital communication based on memristors is a new field. The main principle is to construct a modulation and demodulation circuit by using the resistance variation characteristics of the memristor. Based on the establishment of the Knowm memristor simulation model, firstly, the modulation circuit is designed by using the polarity and symmetry of the memristor and combined with the commercial current feedback amplifier AD844. It is proved that the modulated signal based on the memristor is a strong function of phase, and the demodulation circuit is designed accordingly. All simulation circuits are based on the actual commercial physical device model. The analytical expression of the output signal of the modulation and demodulation circuit is deduced theoretically, and the communication performance of the whole system is simulated by LTSpice. At the same time, the influence of the parasitic capacitance of the memristor on the circuit performance is also considered. After the simulation verification, the hardware circuit experiment of the modulation and demodulation circuit is carried out. The waveforms of the modulated signal and the demodulated signal are measured by an oscilloscope. The experimental results are completely consistent with the simulation and theoretical results. Full article
(This article belongs to the Special Issue Design Trends in RF/Microwave Filtering and Memristive Devices)
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Review

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26 pages, 7643 KiB  
Review
Natural Organic Materials Based Memristors and Transistors for Artificial Synaptic Devices in Sustainable Neuromorphic Computing Systems
by Md Mehedi Hasan Tanim, Zoe Templin and Feng Zhao
Micromachines 2023, 14(2), 235; https://doi.org/10.3390/mi14020235 - 17 Jan 2023
Cited by 7 | Viewed by 3477
Abstract
Natural organic materials such as protein and carbohydrates are abundant in nature, renewable, and biodegradable, desirable for the construction of artificial synaptic devices for emerging neuromorphic computing systems with energy efficient operation and environmentally friendly disposal. These artificial synaptic devices are based on [...] Read more.
Natural organic materials such as protein and carbohydrates are abundant in nature, renewable, and biodegradable, desirable for the construction of artificial synaptic devices for emerging neuromorphic computing systems with energy efficient operation and environmentally friendly disposal. These artificial synaptic devices are based on memristors or transistors with the memristive layer or gate dielectric formed by natural organic materials. The fundamental requirement for these synaptic devices is the ability to mimic the memory and learning behaviors of biological synapses. This paper reviews the synaptic functions emulated by a variety of artificial synaptic devices based on natural organic materials and provides a useful guidance for testing and investigating more of such devices. Full article
(This article belongs to the Special Issue Design Trends in RF/Microwave Filtering and Memristive Devices)
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