III-Nitride Materials in Electronic and Photonic Devices
Deadline for manuscript submissions: 30 April 2024 | Viewed by 721
Interests: advanced III–V compound semiconductor and Si CMOS devices; compound semiconductor device manufacturing and integration (GaAs, InP, Sb-based, and GaN); semiconductor process technology of advanced 3D Si CMOS devices (e.g., FinFET)
Interests: silicon photonics; semiconductor fabrication; microresonator; frequency comb; ultrafast optics; process integration
Special Issues, Collections and Topics in MDPI journals
III-Nitride materials, such as (Al, In, Ga)N, offer numerous advantages that make them highly valuable for various applications, from electronics to photonics. For electronics, the high electron mobility and wide bandgap of III-nitride materials allow high electron mobility transistors (HEMTs) to operate at much higher frequencies and voltages than conventional transistors. Regarding optical applications, III-nitride materials exhibit high efficiency for light-emitting devices and photodetectors. They have been adapted to lighting technologies such as energy-saving LED lighting and laser diodes for data communication and displays. In addition, with their wide bandgap, III-nitride materials yield low optical loss for integrated waveguides, which can be applied in nonlinear and quantum photonics. By varying the composition and crystal structure, III–V materials also offer a wide range of bandgap energies and other electronic properties that can be tuned. With their unique combination of a wide bandgap, high electron mobility, and thermal stability, III-nitride materials are now indispensable in various cutting-edge technologies, including solid-state lighting, 5G communication, artificial intelligence (AI), power electronics, optoelectronics, photonics, and aerospace applications.
The goal of this Special Issue is to seek innovative solutions that take advantage of unique III-nitride material properties, original designs, and fabrication techniques to push the performance of electronic and photonic devices beyond what is conventionally achievable.
Prof. Dr. Chun-Hsiung Lin
Prof. Dr. Pei-Hsun Wang
Manuscript Submission Information
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- III-nitride materials
- CMOS devices
- light-emitting diodes (LED)
- integrated/quantum photonics