Advances in Emerging Nonvolatile Memory, 3rd Edition
Deadline for manuscript submissions: 29 February 2024 | Viewed by 657
2. Intel Corporation, Hillsboro, OR 97124, USA
Interests: memristor; memcomputing; neuromorphic systems; biomimic smart system
Special Issues, Collections and Topics in MDPI journals
As the scaling of electronic semiconductor devices displays signs of saturation, it is worth looking into emerging, beyond-CMOS technologies. Very promising emerging technologies currently in high industry demand are emerging nonvolatile memory devices, including resistive random-access memory (RRAM), phase-change memory (PCM), magneto-resistive random-access memory (MRAM), ferroelectric random-access memory (FeRAM), etc. Compared with flash memory, emerging nonvolatile memory has many merits, such as fast switching speed, low power, high endurance, and a simple device structure. Over the past decade, emerging nonvolatile memory devices have achieved great advances in physical mechanisms, modelling, materials, integration, architecture, and applications. In the context of potential applications, these include memory, neuromorphic computing, nonvolatile logic operations, and stochastic computing. At present, it is possible to buy several commercial standalone memory products based on emerging nonvolatile memory in the semiconductor market. Meanwhile, merging nonvolatile memory can store and process information using the same devices, which has made in-memory computing a hot topic recently. This Special Issue demonstrates the state of the art and exemplifies the recent advances in the field of emerging nonvolatile memory devices for storage and computing and brings together scholars from different scientific disciplines (physics, materials science, electrical engineering, computer science, etc.) representing all aspects of emerging nonvolatile memory devices, from fundamentals to applications.
We look forward to receiving your submissions.
Dr. Yao-Feng Chang
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- emerging nonvolatile memory devices: RRAM, PCM, MRAM, FeRAM
- physical mechanism of nonvolatile switching
- nonvolatile switching materials
- integration of emerging nonvolatile memory devices
- new memory architecture for nonvolatile switching devices
- in-memory computing based on nonvolatile memory
- deep neural networks
- neuromorphic computing
- nonvolatile logic operation
- stochastic computing
- Advances in Emerging Nonvolatile Memory in Micromachines (13 articles)
- Advances in Emerging Nonvolatile Memory, Volume II in Micromachines (13 articles)