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Micromachines
Special Issues
Passive and Active THz Components
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Passive and Active THz Components

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E：Engineering and Technology".

Deadline for manuscript submissions: closed (30 June 2023) | Viewed by 7138

Special Issue Editor

Prof. Dr. Dmitri V. Lioubtchenko

E-Mail Website1 Website2
Guest Editor
KTH Royal Institute of Technology, Stockholm, Sweden
Interests: THz technology; tunable THz devices; dielectric waveguides; nanotubes
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The research and development in the 0.1–1.0 THz frequency region are extremely significant for a wide range of applications, such as telecommunication and imaging systems, material spectroscopy, medical treatments, etc. Despite the problems in technology and high prices for basic components, THz systems offer high data rates for telecommunication, high spatial resolution in object visualizations, small sizes of antennas, and other elements. Otherwise, the state of the art of THz devices reveals serious issues with radiation sources, electronically/optically/mechanically tunable phase shifters, filters, etc. Micromachining is a rapidly developing novel technology platform for passive and active THz components to overcome these issues.

Accordingly, this Special Issue seeks to showcase research papers, communications, and review articles that focus on (1) novel designs, fabrication, and modeling of passive and active THz devices, tunable devices based on MEMS and/or NEMS, novel tunable nanomaterials, detectors, THz antennas, and arrays, including reflect arrays based on all kinds of actuation mechanisms; and (2) new developments applying THz devices to any kind of consumer electronics, telecommunication systems, medicine, agriculture, space, or defense.

Prof. Dr. Dmitri V. Lioubtchenko
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • THz components
  • THz technology
  • THz waveguides
  • material properties for millimeter, microwave, and optoelectronic applications
  • novel 1-D and 2-D materials for THz applications
  • tunable THz materials and devices

Published Papers (4 papers)

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Research

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11 pages, 3474 KiB  
Article
A 110–170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications
by Lian Hu, Ziqiang Yang, Yuan Fang, Qingfeng Li, Yixuan Miao, Xiaofeng Lu, Xuechun Sun and Yaxin Zhang
Micromachines 2023, 14(10), 1921; https://doi.org/10.3390/mi14101921 - 10 Oct 2023
Cited by 1 | Viewed by 939
Abstract
This paper proposes a low-noise amplifier (LNA) for terahertz communication systems. The amplifier is designed based on 90 nm InP high-electron-mobility transistor (HEMT) technology. In order to achieve high gain of LNA, the proposed amplifier adopts a five-stage amplification structure. At the same [...] Read more.
This paper proposes a low-noise amplifier (LNA) for terahertz communication systems. The amplifier is designed based on 90 nm InP high-electron-mobility transistor (HEMT) technology. In order to achieve high gain of LNA, the proposed amplifier adopts a five-stage amplification structure. At the same time, the use of staggered tuning technology has achieved a large bandwidth of terahertz low-noise amplification. In addition, capacitors are used for interstage isolation, sector lines are used for RF bypass, and Microstrip is used to design matching circuits. The entire LNA circuit was validated using accurate electromagnetic simulation. The simulation results show that at 140 GHz, the small signal gain is 25 dB, the noise figure is 4.4 dB, the input 1 dB compression point is −19 dBm, and the 3 dB bandwidth reaches 60 GHz (110–170 GHz), which validates the effectiveness of the design. Full article
(This article belongs to the Special Issue Passive and Active THz Components)
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14 pages, 5556 KiB  
Article
W-Band Beam-Tilted H-Plane Horn Array Antenna with Wideband Integrated Waveguide Feed Network Based on MMPTE
by Yun Zhao, Fan Ye, Sheng Li, Ai-Zhong Wang and Jiang-Qiao Ding
Micromachines 2023, 14(2), 259; https://doi.org/10.3390/mi14020259 - 19 Jan 2023
Cited by 1 | Viewed by 1399
Abstract
A W-band H-plane horn array antenna with tilted radiation beam based on waveguide structure is proposed in this paper. The designed antenna array consists of four H-plane antenna elements and a broadband feed network. The distribution of excitations is determined by the theory [...] Read more.
A W-band H-plane horn array antenna with tilted radiation beam based on waveguide structure is proposed in this paper. The designed antenna array consists of four H-plane antenna elements and a broadband feed network. The distribution of excitations is determined by the theory of maximum power transmission efficiency (MMPTE). A multiple branch coupler, two T-junctions and three fixed phase shifters are employed to construct the feed network, which can generate the required amplitude and phase in broadband frequency range from 80 GHz to 100 GHz. The computer numerical control (CNC) milling machines technology is employed to machine the feed network and antenna. All measured and simulated results are in good agreement, which verify the feasibility of the theory of MMPTE to generate a radiation beam directed to any angle from −35° to 35° with suitable excitation provided by the proposed feed network in this paper. Full article
(This article belongs to the Special Issue Passive and Active THz Components)
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12 pages, 2870 KiB  
Article
The Development of Frequency Tripler Based on Six-Anode Schottky Varactors
by Yuhang Li, Jin Meng, Dehai Zhang and Haotian Zhu
Micromachines 2021, 12(12), 1490; https://doi.org/10.3390/mi12121490 - 30 Nov 2021
Cited by 2 | Viewed by 1388
Abstract
The development of a millimeter-wave unbalanced frequency tripler based on the nonlinear characteristics of planar Schottky varactors is presented. The entire module is designed by hybrid integration. A frequency multiplier circuit model was established to reflect the influence of diode parameters and the [...] Read more.
The development of a millimeter-wave unbalanced frequency tripler based on the nonlinear characteristics of planar Schottky varactors is presented. The entire module is designed by hybrid integration. A frequency multiplier circuit model was established to reflect the influence of diode parameters and the impedance matching on the multiplier in different frequency bands. The effect of junction imbalance on the output power of the frequency multiplier was investigated and the multiplier was improved based on the basic design. The addition of a cut microstrip stub in the improved diode unit reduced the impact of a power imbalance on frequency multiplier performance. The characteristics of the multiplier circuit were analyzed by the full-wave electromagnetic simulation of the three-dimensional structure and the harmonic balance simulation of the circuit. Test results showed that the peak output power of the improved frequency tripler was 12.6 mW at 277 GHz with an input power of 200 mW, an effective 12% improvement over the basic design. Full article
(This article belongs to the Special Issue Passive and Active THz Components)
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Review

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21 pages, 6650 KiB  
Review
Recent Progress of Terahertz Spatial Light Modulators: Materials, Principles and Applications
by Shengnan Guan, Jierong Cheng and Shengjiang Chang
Micromachines 2022, 13(10), 1637; https://doi.org/10.3390/mi13101637 - 29 Sep 2022
Cited by 12 | Viewed by 2708
Abstract
Terahertz (THz) technology offers unparalleled opportunities in a wide variety of applications, ranging from imaging and spectroscopy to communications and quality control, where lack of efficient modulation devices poses a major bottleneck. Spatial modulation allows for dynamically encoding various spatial information into the [...] Read more.
Terahertz (THz) technology offers unparalleled opportunities in a wide variety of applications, ranging from imaging and spectroscopy to communications and quality control, where lack of efficient modulation devices poses a major bottleneck. Spatial modulation allows for dynamically encoding various spatial information into the THz wavefront by electrical or optical control. It plays a key role in single-pixel imaging, beam scanning and wavefront shaping. Although mature techniques from the microwave and optical band are not readily applicable when scaled to the THz band, the rise of metasurfaces and the advance of new materials do inspire new possibilities. In this review, we summarize the recent progress of THz spatial light modulators from the perspective of functional materials and analyze their modulation principles, specifications, applications and possible challenges. We envision new advances of this technique in the near future to promote THz applications in different fields. Full article
(This article belongs to the Special Issue Passive and Active THz Components)
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