Organic Semiconductors and Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 30 April 2024 | Viewed by 2986

Special Issue Editor

The SDC Research Lab, Department of Electronic Engineering, Gachon University, 1342 Seongnam-daero, Seongnam 13120, Republic of Korea
Interests: 2D materials; nanodevices; nanomaterials; mixed-dimensional transistors; device physics; neuromorphic devices; integrated circuit; sensors; optoelectronic devices; organic semiconductors; memristors; floating-gate memories; charge traps; charge transports; carbon nanotubes; nanoscale devices; lithography; spectroscopies
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Special Issue Information

Dear Colleagues,

Organic semiconductors are desirable, lightweight, and flexible materials with electronic applications. Significant merits of the organic semiconductors include their chemical diversity, low-cost process fabrication, and compatibility with various substrates plastics, fiber substrates, and stretchable systems, which distinguishes organic semiconductor-based devices from conventional devices. 

This Special Issue calls for research papers, reviews, and short communications related to state-of-the-art developments contributing to electronic devices based on organic semiconductors, including small molecules, polymers, and organic–inorganic hybrid materials.

Dr. Hocheon Yoo
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • small molecules
  • organic thin-film transistors
  • organic memory devices
  • organic dopants
  • polymer dielectric
  • flexible organic devices
  • p-doping/n-doping
  • ambipolar transistors
  • solution process
  • organic-semiconductor-based circuits
  • charge transports in organic semiconductors

Published Papers (3 papers)

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Research

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12 pages, 2951 KiB  
Article
Highly Transparent Red Organic Light-Emitting Diodes with AZO/Ag/AZO Multilayer Electrode
Micromachines 2024, 15(1), 146; https://doi.org/10.3390/mi15010146 - 18 Jan 2024
Viewed by 635
Abstract
Free-form factor optoelectronics is becoming more important for various applications. Specifically, flexible and transparent optoelectronics offers the potential to be adopted in wearable devices in displays, solar cells, or biomedical applications. However, current transparent electrodes are limited in conductivity and flexibility. This study [...] Read more.
Free-form factor optoelectronics is becoming more important for various applications. Specifically, flexible and transparent optoelectronics offers the potential to be adopted in wearable devices in displays, solar cells, or biomedical applications. However, current transparent electrodes are limited in conductivity and flexibility. This study aims to address these challenges and explore potential solutions. For the next-generation transparent conductive electrode, Al-doped zinc oxide (AZO) and silver (AZO/Ag/AZO) deposited by in-line magnetron sputtering without thermal treatment was investigated, and this transparent electrode was used as a transparent organic light-emitting diode (OLED) anode to maximize the transparency characteristics. The experiment and simulation involved adjusting the thickness of Ag and AZO and OLED structure to enhance the transmittance and device performance. The AZO/Ag/AZO with Ag of 12 nm and AZO of 32 nm thickness achieved the results of the highest figure of merit (FOM) (Φ550 = 4.65 mΩ−1) and lowest roughness. The full structure of transparent OLED (TrOLED) with AZO/Ag/AZO anode and Mg:Ag cathode reached 64.84% transmittance at 550 nm, and 300 cd/m2 at about 4 V. The results demonstrate the feasibility of adopting flexible substrates, such as PET, without the need for thermal treatment. This research provides valuable insights into the development of transparent and flexible electronic devices. Full article
(This article belongs to the Special Issue Organic Semiconductors and Devices)
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11 pages, 2288 KiB  
Article
Improving Photosensitivity and Transparency in Organic Phototransistor with Blending Insulating Polymers
Micromachines 2023, 14(3), 620; https://doi.org/10.3390/mi14030620 - 08 Mar 2023
Cited by 2 | Viewed by 1333
Abstract
Organic phototransistors exhibit great promise for use in a wide range of technological applications due to their flexibility, low cost, and low-temperature processability. However, their low transparency due to visible light absorption has hindered their adoption in next-generation transparent electronics. For this reason, [...] Read more.
Organic phototransistors exhibit great promise for use in a wide range of technological applications due to their flexibility, low cost, and low-temperature processability. However, their low transparency due to visible light absorption has hindered their adoption in next-generation transparent electronics. For this reason, the present study sought to develop a highly sensitive organic phototransistor with greater transparency and significantly higher light sensitivity in the visible and UVA regions without deterioration in its electrical properties. An organic blended thin-film transistor (TFT) fabricated from the blend of an organic semiconductor and an insulating polymer demonstrated improved electrical properties in the dark and a higher current under light irradiation even though its transmittance was higher. The device exhibited a transmittance of 87.28% and a photosensitivity of 7049.96 in the visible light region that were 4.37% and 980 times higher than those of the single-semiconductor-based device. The carrier mobility of the device blended with the insulating polymer was improved and greatly amplified under light irradiation. It is believed that the insulating polymer facilitated the crystallization of the organic semiconductor, thus promoting the flow of photogenerated excitons and improving the photocurrent. Overall, the proposed TFT offers excellent low-temperature processability and has the potential to be employed in a range of transparent electronic applications. Full article
(This article belongs to the Special Issue Organic Semiconductors and Devices)
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Review

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23 pages, 9828 KiB  
Review
Split-Gate: Harnessing Gate Modulation Power in Thin-Film Electronics
Micromachines 2024, 15(1), 164; https://doi.org/10.3390/mi15010164 - 22 Jan 2024
Viewed by 652
Abstract
With the increase in electronic devices across various applications, there is rising demand for selective carrier control. The split-gate consists of a gate electrode divided into multiple parts, allowing for the independent biasing of electric fields within the device. This configuration enables the [...] Read more.
With the increase in electronic devices across various applications, there is rising demand for selective carrier control. The split-gate consists of a gate electrode divided into multiple parts, allowing for the independent biasing of electric fields within the device. This configuration enables the potential formation of both p- and n-channels by injecting holes and electrons owing to the presence of the two gate electrodes. Applying voltage to the split-gate allows for the control of the Fermi level and, consequently, the barrier height in the device. This facilitates band bending in unipolar transistors and allows ambipolar transistors to operate as if unipolar. Moreover, the split-gate serves as a revolutionary tool to modulate the contact resistance by controlling the barrier height. This approach enables the precise control of the device by biasing the partial electric field without limitations on materials, making it adaptable for various applications, as reported in various types of research. However, the gap length between gates can affect the injection of the electric field for the precise control of carriers. Hence, the design of the gap length is a critical element for the split-gate structure. The primary investigation in this review is the introduction of split-gate technology applied in various applications by using diverse materials, the methods for forming the split-gate in each device, and the operational mechanisms under applied voltage conditions. Full article
(This article belongs to the Special Issue Organic Semiconductors and Devices)
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