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Micromachines
Special Issues
Emerging Packaging and Interconnection Technology
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Emerging Packaging and Interconnection Technology

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E：Engineering and Technology".

Deadline for manuscript submissions: 30 September 2024 | Viewed by 4105

Special Issue Editors

Dr. Zhuo Chen

E-Mail Website
Guest Editor
The School of Mechanical and Electrical Engineering, Central South University, Changsha 410083, China
Interests: micro/nano-structure; MEMS packaging; surface and interface engineering; additive/subtractive packaging manufacturing
Dr. Ziyu Liu

E-Mail Website
Guest Editor
School of Microelectronic, Fudan University, 220 Handan Rd., Shanghai 200433, China
Interests: 3D integration and advancing packaging technology; the fabrication, design and materials of TSV technology; Cu-Cu bonding; hybrid bonding; SI/PI, mechanical reliability of advancing packaging technology

Special Issue Information

Dear Colleagues,

As the integrated circuit industry becomes increasingly oriented by the "More than Moore" wave, electronic packaging is under the spotlight more than ever. This particular industrial sector is developing a fusion with cutting-edge micro/nano-scale science and engineering, with a significant impact on modern manufacturing. This Special Issue aims to provide a forum for the researchers and engineers of microelectronics packaging to share their latest ideas and discoveries, with an emphasis on advanced science and technology at the micro/nano-scale, a major topic covered by the journal Micromachines.

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following: design and implementation of new packaging architecture, advanced chip-to-substrate interconnection, high-density and low-temperature interconnection, micro/nano-structures for surface and interface engineering in packaging, new materials and processes of advanced packaging, modeling and simulation, heterogeneous integration, MEMS packaging and integration, packaging reliability, and manufacturing tooling.

Dr. Zhuo Chen
Dr. Ziyu Liu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • advanced packaging
  • micro/nano-structure
  • MEMS packaging
  • high-density interconnection
  • modeling and simulation
  • heterogeneous integration
  • surface and interface engineering
  • manufacturing tooling
  • additive/subtractive packaging manufacturing

Published Papers (3 papers)

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Research

11 pages, 4797 KiB  
Article
A Method for Fast Au-Sn Bonding at Low Temperature Using Thermal Gradient
by Wenchao Wang, Ziyu Liu, Delong Qiu, Zhiyuan Zhu, Na Yan, Shijin Ding and David Wei Zhang
Micromachines 2023, 14(12), 2242; https://doi.org/10.3390/mi14122242 - 15 Dec 2023
Viewed by 752
Abstract
Flip chip bonding technology on gold–tin (Au-Sn) microbumps for MEMS (Micro Electro Mechanical Systems) and 3D packaging is becoming increasingly important in the electronics industry. The main advantages of Au-Sn microbumps are a low electrical resistance, high electrical reliability, and fine pitch. However, [...] Read more.
Flip chip bonding technology on gold–tin (Au-Sn) microbumps for MEMS (Micro Electro Mechanical Systems) and 3D packaging is becoming increasingly important in the electronics industry. The main advantages of Au-Sn microbumps are a low electrical resistance, high electrical reliability, and fine pitch. However, the bonding temperature is relatively high, and the forming mechanism of an intermetallic compound (IMC) is complicated. In this study, Au-Sn solid-state diffusion (SSD) bonding is performed using the thermal gradient bonding (TGB) method, which lowers bonding temperature and gains high bonding strength in a short time. Firstly, Au-Sn microbumps with a low roughness are prepared by using an optimized process. Then, Au-Sn bonding parameters including bonding temperature, bonding time, and bonding pressure are optimized to obtain a higher bonding quality. The shear strength of 23.898 MPa is obtained when bonding in the HCOOH environment for 10 min at the gradient temperature of 150 °C/250 °C with a bonding pressure of more than 10 MPa. The IMC of Au-Sn is found to be Au-Sn and Au5Sn. The effect of annealing time on the IMC is also investigated. More and more Au5Sn is generated with an increase in annealing time, and Au5Sn is formed after Sn is depleted. Finally, the effect of annealing time on the IMC is verified by using finite element simulation, and the bonding strength of IMC was found to be higher when the bonding temperature is 150 °C at the cold side and 250 °C at the hot side. The temperature in the bonding area can reach 200 °C, which proves that the Au-Sn bonding process is solid-state diffusion because the temperature gradient reaches 2500 °C/cm. Full article
(This article belongs to the Special Issue Emerging Packaging and Interconnection Technology)
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15 pages, 9430 KiB  
Article
Failure Analysis for Gold Wire Bonding of Sensor Packaging Based on Experimental and Numerical Methods
by Yameng Sun, Kun Ma, Yifan Song, Tongtong Zi, Xun Liu, Zheng Feng, Yang Zhou and Sheng Liu
Micromachines 2023, 14(9), 1695; https://doi.org/10.3390/mi14091695 - 30 Aug 2023
Viewed by 1113
Abstract
There is an increasing demand for the use of automotive sensors where complex working environments may easily lead to failure. Wire pull and shear test models based on finite-element analysis are established to evaluate their reliability by investigating the failure mode and mechanism [...] Read more.
There is an increasing demand for the use of automotive sensors where complex working environments may easily lead to failure. Wire pull and shear test models based on finite-element analysis are established to evaluate their reliability by investigating the failure mode and mechanism of gold wire bonding. The effect of shear force position and pull force position on failure is also analyzed. The bonding failure was verified by experiments, which is consistent with the simulation result. The results show that: (1) The three-dimensional quantitative modeling reveals the process of bonding delamination and stress concentration. (2) The bonding–slip method (BSM) is adopted in the gold ball detaching process. The concept of three states, including deformation accumulation, cracking, and disengagement, was put forward to reveal the interface stress evolution trend according to the shear testing results. The results indicate that in the interface, the stress in the deformation accumulation state decreases from the tensile side (or compression side) to the center, and the stress in the cracking and disengagement states reduces gradually from the tensile side to the edge. When the interface is completely separated, the failed shear force concentrates on 42 g. The concept and theory proposed in this work can effectively reveal the failure mechanism of bonding interface and help to establish a new failure criterion. Full article
(This article belongs to the Special Issue Emerging Packaging and Interconnection Technology)
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14 pages, 6214 KiB  
Article
Mechanical Reliability Assessment of a Flexible Package Fabricated Using Laser-Assisted Bonding
by Xuan-Luc Le, Xuan-Bach Le, Yuhwan Hwangbo, Jiho Joo, Gwang-Mun Choi, Yong-Sung Eom, Kwang-Seong Choi and Sung-Hoon Choa
Micromachines 2023, 14(3), 601; https://doi.org/10.3390/mi14030601 - 04 Mar 2023
Cited by 3 | Viewed by 1679
Abstract
The aim of this study was to develop a flexible package technology using laser-assisted bonding (LAB) technology and an anisotropic solder paste (ASP) material ultimately to reduce the bonding temperature and enhance the flexibility and reliability of flexible devices. The heat transfer phenomena [...] Read more.
The aim of this study was to develop a flexible package technology using laser-assisted bonding (LAB) technology and an anisotropic solder paste (ASP) material ultimately to reduce the bonding temperature and enhance the flexibility and reliability of flexible devices. The heat transfer phenomena during the LAB process, mechanical deformation, and the flexibility of a flexible package were analyzed by experimental and numerical simulation methods. The flexible package was fabricated with a silicon chip and a polyimide (PI) substrate. When the laser beam was irradiated onto the flexible package, the temperatures of the solder increased very rapidly to 220 °C, high enough to melt the ASP solder, within 2.4 s. After the completion of irradiation, the temperature of the flexible package decreased quickly. It was found that the solder powder in ASP was completely melted and formed stable interconnections between the silicon chip and the copper pads, without thermal damage to the PI substrate. After the LAB process, the flexible package showed warpage of 80 μm, which was very small compared to the size of the flexible package. The stress of each component in the flexible package generated during the LAB process was also found to be very low. The flexible device was bent up to 7 mm without failure, and the flexibility can be improved further by reducing the thickness of the silicon chip. The bonding strength and environmental reliability tests also showed the excellent mechanical endurance of the flexible package. Full article
(This article belongs to the Special Issue Emerging Packaging and Interconnection Technology)
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