Semiconductors and Nanostructures for Electronics and Photonics, Second Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 30 April 2024 | Viewed by 1286

Special Issue Editor

Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
Interests: 2D materials; lattice engineering; twist-optics; electronic properties; photoluminescence and raman spectroscopy
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Multi-dimensional including zero- to three-dimensional materials have been studied for photonic applications. Recently, two-dimensional flakes of transition metal chalcogenides have been shown to exhibit exceptional electronic properties that must be understood in order to provide the framework for modern electronic and photonic quantum technologies, such as superconductivity, charge density wave (CDW) state, metal insulator transition, ferromagnetism, correlated insulation, spin and valley polarization, exciton condensate state, etc. According to ongoing research, the critical temperature for these quantum physical phenomena lies in variable cryogenic range (~1~200 K), which is one of the hurdles in employing 2D materials for real-world practical applications. Now, it is necessary to realize the utility based on 2D materials in various quantum technologies by increasing the critical temperature of these quantum states in 2D materials. As we all know, these days, discovering 2D magnets and superconductors that are accessible at room temperature is a quickly growing research interest. The worldwide quest for more information on this topic is ongoing. Among them, doping 2D materials twisting between layers are recognized for customizing a wide range of fundamental optical and electrical properties to the atomically thin TMD films, in particular, doping-induced generation of the multi-exciton states, superconductivity, and ferromagnetism, to distinct phase transitions, are ideal for a wide range of optoelectronic applications, as well as the realization of quantum mechanical phenomena that were previously just theoretical.

We look forward to receiving your submissions!

Dr. Krishna Prasad Dhakal
Guest Editor

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Keywords

  • 2D materials
  • doping
  • twisting
  • exciton
  • phonon
  • quantum states
  • critical temperature

Published Papers (2 papers)

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Research

11 pages, 2452 KiB  
Article
Solution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability
Micromachines 2024, 15(2), 193; https://doi.org/10.3390/mi15020193 - 27 Jan 2024
Viewed by 562
Abstract
To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is [...] Read more.
To fabricate oxide thin-film transistors (TFTs) with high performance and excellent stability, preparing high-quality semiconductor films in the channel bulk region and minimizing the defect states in the gate dielectric/channel interfaces and back-channel regions is necessary. However, even if an oxide transistor is composed of the same semiconductor film, gate dielectric/channel interface, and back channel, its electrical performance and operational stability are significantly affected by the thickness of the oxide semiconductor. In this study, solution process-based nanometer-scale thickness engineering of InZnO semiconductors was easily performed via repeated solution coating and annealing. The thickness-controlled InZnO films were then applied as channel regions, which were fabricated with almost identical film quality, gate dielectric/channel interface, and back-channel conditions. However, excellent operational stability and electrical performance suitable for oxide TFT backplane was only achieved using an 8 nm thick InZnO film. In contrast, the ultrathin and thicker films exhibited electrical performances that were either very resistive (high positive VTh and low on-current) or excessively conductive (high negative VTh and high off-current). This investigation confirmed that the quality of semiconductor materials, solution process design, and structural parameters, including the dimensions of the channel layer, must be carefully designed to realize high-performance and high-stability oxide TFTs. Full article
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10 pages, 4775 KiB  
Article
Performance Investigations of InAs/InP Quantum-Dash Semiconductor Optical Amplifiers with Different Numbers of Dash Layers
Micromachines 2023, 14(12), 2230; https://doi.org/10.3390/mi14122230 - 12 Dec 2023
Viewed by 592
Abstract
We present here a performance comparison of quantum-dash (Qdash) semiconductor amplifiers (SOAs) with three, five, eight, and twelve InAs dash layers grown on InP substrates. Other than the number of Qdash layers, the structures were identical. The eight-layer Qdash SOA gave the highest [...] Read more.
We present here a performance comparison of quantum-dash (Qdash) semiconductor amplifiers (SOAs) with three, five, eight, and twelve InAs dash layers grown on InP substrates. Other than the number of Qdash layers, the structures were identical. The eight-layer Qdash SOA gave the highest amplified spontaneous emission power (4.3 dBm) and chip gain (26.4 dB) at 1550 nm, with a 300 mA CW bias current and at 25 °C temperature, while SOAs with fewer Qdash layers (for example, three-layer Qdash SOA), had a wider ASE bandwidth (90 nm) and larger 3 dB gain saturated output power (18.2 dBm) in a shorter wavelength range. The noise figure (NF) of the SOAs increased nearly linearly with the number of Qdash layers. The longest gain peak wavelength of 1570 nm was observed for the 12-layer Qdash SOA. The most balanced performance was obtained with a five-layer Qdash SOA, with a 25.4 dB small-signal chip gain, 15.2 dBm 3 dB output saturated power, and 5.7 dB NF at 1532 nm, 300 mA and 25 °C. These results are better than those of quantum well SOAs reported in a recent review paper. The high performance of InAs/InP Qdash SOAs with different Qdash layers shown in this paper could be important for many applications with distinct requirements under uncooled scenarios. Full article
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