2-D Materials based Electronic Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: closed (30 November 2020) | Viewed by 3172

Special Issue Editor


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Guest Editor
Department of Physics, University of North Texas, Denton, USA
Interests: one-dimensional (1D) nanostructures; semiconductor nanowires; 2-D Materials
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Special Issue Information

Dear Colleagues,

Because of their atomically thin dimensions and excellent electrical and optical properties, there has been intense research efforts directed at the growth and fundamental properties of two-dimensional (2-D) materials. This Special Issue will showcase research papers, review articles, and short communications related to electronic/optoelectronic devices fabricated using this class of material. Their intrinsic properties are a result of confinement in one dimension and a relatively large surface area, which allows for stacking different materials in a layer-by-layer growth. It also allows engineering materials of different compositions to form hybrid composites with unique properties to enable diverse functionalities. 2D materials of interest include but are not limited to graphene, metal di- and tri-chalcogenides, etc. This Issue seeks to highlight a wide range of 2-D materials-based device applications ranging from field effect transistors, and sensors, to applications in plasmonics and photonics.

Prof. Usha Philipose
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Two-dimensional materials
  • Electronic devices
  • Confinement
  • Engineered surfaces
  • Domains
  • Carrier mobility
  • Intrinsic properties
  • Device functionality

Published Papers (1 paper)

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Research

13 pages, 10578 KiB  
Article
Research of Wafer Level Bonding Process Based on Cu–Sn Eutectic
by Daowei Wu, Wenchao Tian, Chuqiao Wang, Ruixia Huo and Yongkun Wang
Micromachines 2020, 11(9), 789; https://doi.org/10.3390/mi11090789 - 20 Aug 2020
Cited by 14 | Viewed by 2884
Abstract
In 3D-system packaging technologies, eutectic bonding is the key technology of multilayer chip stacking and vertical interconnection. Optimized from the aspects of the thickness of the electroplated metal layer, the pretreatment of the wafer surface removes the oxide layer, the mutual alignment between [...] Read more.
In 3D-system packaging technologies, eutectic bonding is the key technology of multilayer chip stacking and vertical interconnection. Optimized from the aspects of the thickness of the electroplated metal layer, the pretreatment of the wafer surface removes the oxide layer, the mutual alignment between the wafers, the temperature of the wafer bonding, the uniformity of pressure and the deviation of the bonding process. Under the pretreatment conditions of plasma treatment and citric acid cleaning, no oxide layer was obtained on the metal surface. Cu/Sn bumps bonded under the condition of 0.135 Mpa, temperature of 280 °C, Sn thickness of 3–4 μm and a Cu-thickness of five micrometers. Bonded push crystal strength ≥18 kg/cm2, the average contact resistance of the bonding interface is about 3.35 mΩ, and the bonding yield is 100%. All performance indicators meet and exceed the industry standards. Full article
(This article belongs to the Special Issue 2-D Materials based Electronic Devices)
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