Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
5.2
3.4
Journals
Materials
Special Issues
Ultra-Wide Bandgap Semiconductors and Devices
materials-logo
Submit to Materials Review for Materials Propose a Special Issue

Journal Menu

► Journal Menu

Journal Browser

► Journal Browser
share announcement

Ultra-Wide Bandgap Semiconductors and Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Energy Materials".

Deadline for manuscript submissions: closed (20 September 2023) | Viewed by 3839

Special Issue Editor

Prof. Dr. Xing Lu

E-Mail
Guest Editor
School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China
Interests: wide bandgap semiconductors; electronic devices; optoelectronics; device processing

Special Issue Information

Dear Colleagues,

Emerging ultrawide bandgap (UWBG) semiconductors have attracted more and more attention due to their potential advantages for use in many applications, such as high-voltage power switches, RF amplifiers, solar blind photodetectors, and harsh environment electronics. Theoretically, with an even wider bandgap than the previously established GaN (3.4 eV) and SiC (3.3 eV), UWBG materials offer many far superior properties, such as a larger breakdown electric field, higher temperature tolerance, and potentially higher radiation hardness. These materials include but are not limited to gallium oxide (Ga2O3), diamond, aluminum nitride (AlN), and boron nitride (BN). In recent years, remarkable progress has been made in the development of UWBG semiconductors in terms of both material synthesis and device applications. However, there are still many obstacles to be addressed.

This Special Issue is focused on recent progress in all topics related to UWBG semiconductors and devices. Topics of interest in the issue include (but are not limited to):

  • UWBG material synthesis and characterizations;
  • Defect analysis in UWBG semiconductors and devices;
  • Device design, fabrication, and characterizations;
  • Simulations and theoretical studies;
  • Packaging, applications, and reliability for UWBG electronics/optoelectronics;
  • Novel devices and applications.

Prof. Dr. Xing Lu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • ultrawide bandgap semiconductors
  • gallium oxide
  • diamond
  • aluminum nitride
  • boron nitride

Published Papers (2 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

10 pages, 2338 KiB  
Article
A High-Performance ε-Ga2O3-Based Deep-Ultraviolet Photodetector Array for Solar-Blind Imaging
by Shuren Zhou, Qiqi Zheng, Chenxi Yu, Zhiheng Huang, Lingrui Chen, Hong Zhang, Honglin Li, Yuanqiang Xiong, Chunyang Kong, Lijuan Ye and Wanjun Li
Materials 2023, 16(1), 295; https://doi.org/10.3390/ma16010295 - 28 Dec 2022
Cited by 13 | Viewed by 1817
Abstract
One of the most important applications of photodetectors is as sensing units in imaging systems. In practical applications, a photodetector array with high uniformity and high performance is an indispensable part of the imaging system. Herein, a photodetector array (5 × 4) consisting [...] Read more.
One of the most important applications of photodetectors is as sensing units in imaging systems. In practical applications, a photodetector array with high uniformity and high performance is an indispensable part of the imaging system. Herein, a photodetector array (5 × 4) consisting of 20 photodetector units, in which the photosensitive layer involves preprocessing commercial ε-Ga2O3 films with high temperature annealing, have been constructed by low-cost magnetron sputtering and mask processes. The ε-Ga2O3 ultraviolet photodetector unit shows excellent responsivity and detectivity of 6.18 A/W and 5 × 1013 Jones, respectively, an ultra-high light-to-dark ratio of 1.45 × 105, and a fast photoresponse speed (0.14/0.09 s). At the same time, the device also shows good solar-blind characteristics and stability. Based on this, we demonstrate an ε-Ga2O3-thin-film-based solar-blind ultraviolet detector array with high uniformity and high performance for solar-blind imaging in optoelectronic integration applications. Full article
(This article belongs to the Special Issue Ultra-Wide Bandgap Semiconductors and Devices)
►▼ Show Figures

Figure 1

9 pages, 3669 KiB  
Article
UV Light Irradiation Effects in P-Doped Diamonds: Total Content Determination of Phosphorus Donors
by Kirill Boldyrev, Sergey Klimin, Viktor Denisov, Sergey Tarelkin, Mikhail Kuznetsov, Sergey Terentiev and Vladimir Blank
Materials 2022, 15(24), 9048; https://doi.org/10.3390/ma15249048 - 18 Dec 2022
Viewed by 1373
Abstract
Upon the UV light irradiation of single-crystal diamonds doped with phosphorus, several effects have been observed. The integral intensity of phosphorus lines in FTIR absorption spectra under UV radiation was increased. A saturation effect depending on the power of the laser radiation was [...] Read more.
Upon the UV light irradiation of single-crystal diamonds doped with phosphorus, several effects have been observed. The integral intensity of phosphorus lines in FTIR absorption spectra under UV radiation was increased. A saturation effect depending on the power of the laser radiation was demonstrated. Narrowing of the phosphorus lines, as well as the redistribution of the intensities in their doublets caused by the Jahn–Teller distortion of the donor ground state, was observed. It was found that these effects are associated with the decompensation of the phosphorus donors. An easy, fast, sensitive, and nondestructive, fully optical method for the determination of the total phosphorus donor’s concentration in semiconducting diamonds, as well as its compensation ratio, was proposed. Full article
(This article belongs to the Special Issue Ultra-Wide Bandgap Semiconductors and Devices)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-2
Back to TopTop